WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 Compliant Devices Available TTL Compatible Inputs and Outputs Packaging Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation * 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400) Weight: WS128K32-XG2UX - 8 grams typical WS128K32-XG2LX - 8 grams typical WS128K32-XH1X - 13 grams typical WS128K32-XG4TX1 - 20 grams typical 1 * 68 lead, 40mm CQFP (G4T) , 3.56mm (0.140") (Package 502) * 68 lead, 22.4mm CQFP (G2U), 3.56mm (0.140"), (Package 510) Devices are upgradeable to 512Kx32 * 68 lead, 22.4mm (0.880") square, CQFP (G2L), 5.08mm (0.200") high, (Package 528) Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8 This product is subject to change without notice. Commercial, Industrial and Military Temperature Ranges 5 Volt Power Supply FIGURE 1 - PIN CONFIGURATION FOR WS128K32N-XH1X Top View 1 12 Pin Description 23 34 45 56 I/O8 WE2# I/O15 I/O24 VCC I/O31 I/O9 CS2# I/O14 I/O25 CS4# I/O30 I/O10 GND I/O13 I/O26 WE4# I/O29 A13 I/O11 I/O12 A6 I/O27 I/O28 A14 A10 OE# A7 A3 A0 A15 A11 NC NC A4 A1 A16 A12 WE1# A8 A5 A2 NC VCC I/O7 A9 WE3# I/O23 I/O0 CS1# I/O6 I/O16 CS3# I/O22 I/O1 NC I/O5 I/O17 GND I/O21 I/O2 I/O3 I/O4 I/O18 I/O19 I/O20 11 22 33 44 55 I/O0-31 A0-16 WE1-4# CS1-4# OE# VCC GND NC Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected Block Diagram WE#1 CS#1 WE#2 CS#2 WE#3 CS#3 WE#4 CS#4 OE# A0-16 128K x 8 8 I/O 0-7 128K x 8 8 I/O 8-15 128K x 8 8 I/O 16-23 128K x 8 8 I/O 24-31 66 Microsemi Corporation reserves the right to change products or specifications without notice. September 2010 Rev. 18 (c) 2010 Microsemi Corporation. All rights reserved. 1 Microsemi Corporation * (602) 437-1520 * www.microsemi.com WS128K32-XXX FIGURE 2 - PIN CONFIGURATION FOR WS128K32-XG4TX1 Top View Pin Description NC A0 A1 A2 A3 A4 A5 CS1# GND CS3# WE1# A6 A7 A8 A9 A10 VCC I/O0-31 A0-16 WE1-4# CS1-4# OE# VCC GND NC 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected Block Diagram CS1# WE# OE# A0-16 CS2# 128K X 8 128K X 8 CS3# 128K X 8 CS4# 128K X 8 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 A16 CS2# OE# CS4# NC NC NC NC NC NC NC A15 VCC A11 A12 A13 A14 8 8 8 I/O8 - 15 I/O0 - 7 8 I/O16 - 23 I/O24 - 31 Note 1: Package Not Recommended For New Design FIGURE 3 - PIN CONFIGURATION FOR WS128K32-XG2UX AND WS128K32-XG2LX Top View Pin Description NC A0 A1 A2 A3 A4 A5 CS3# GND CS4# WE1# A6 A7 A8 A9 A10 VCC I/O0-31 A0-16 WE1-4# CS1-4# OE# VCC GND NC 9 8 7 6 5 4 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 3 2 1 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 Block Diagram WE#1 CS#1 WE#2 CS#2 WE#3 CS#3 WE#4 CS#4 OE# A0-16 128K x 8 8 VCC A11 A12 A13 A14 A15 A16 CS1# OE# CS2# NC WE2# WE3# WE4# NC NC NC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected I/O 0-7 128K x 8 8 I/O 8-15 128K x 8 8 I/O 16-23 128K x 8 8 I/O 24-31 Note 1: Package Not Recommended For New Design Microsemi Corporation reserves the right to change products or specifications without notice. September 2010 Rev. 18 (c) 2010 Microsemi Corporation. All rights reserved. 2 Microsemi Corporation * (602) 437-1520 * www.microsemi.com WS128K32-XXX ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC Min -55 -65 -0.5 -0.5 TRUTH TABLE Max +125 +150 VCC+0.5 150 7.0 CS H L L L Unit C C V C V OE X L X H WE X H L H Mode Standby Read Write Out Disable Data I/O High Z Data Out Data In High Z Power Standby Active Active Active CAPACITANCE TA = +25C RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp (Mil) Symbol VCC VIH VIL TA Min 4.5 2.2 -0.5 -55 Max 5.5 VCC + 0.3 +0.8 +125 Parameter OE# capacitance WE1-4# capacitance HIP (PGA) H1 CQFP G4T CQFP G2U/G2L CS1-4# capacitance Data# I/O capacitance Address input capacitance Unit V V V C Symbol COE CWE Conditions VIN = 0V, f = 1.0 MHz VIN = 0V, f = 1.0 MHz CCS CI/O CAD VIN = 0V, f = 1.0 MHz VI/O = 0V, f = 1.0 MHz VIN = 0V, f = 1.0 MHz Max 50 Unit pF pF 20 50 20 20 20 50 pF pF pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS VCC = 5.0V, VSS = 0V, -55C TA +125C Parameter Sym Conditions -15 Min Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage Parameter ILI ILO ICC ISB VOL VOH VCC = 5.5, VIN = GND to VCC CS# = VIH, OE# = VIH, VOUT = GND to VCC CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5 CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 IOL = 8mA, VCC = 4.5 IOH = -4.0mA, VCC = 4.5 Sym -20 Max -25 Max Min 10 10 600 60 0.4 2.4 2.4 -45 Max Min 2.4 -55 Max 10 10 600 60 0.4 Units Max 10 10 600 80 0.4 2.4 -35 VCC = 5.5, VIN = GND to VCC CS# = VIH, OE# = VIH, VOUT = GND to VCC CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5 CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 IOL = 8mA, VCC = 4.5 IOH = -4.0mA, VCC = 4.5 Min 10 10 600 80 0.4 2.4 Conditions ILI ILO ICC ISB VOL VOH Min 10 10 600 80 0.4 Min Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage -17 Max Units Min Max 10 10 600 60 0.4 10 10 600 60 0.4 2.4 A A mA mA V V 2.4 A A mA mA V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V DATA RETENTION CHARACTERISTICS (For WS128K32L-XXX Only) -55C TA +125C, -40C TA +85C Characteristic Sym Conditions Min Typ Max Units Data Retention Voltage Data Retention Quiescent Current VCC ICCDR VCC = 2.0V CS VCC -0.2V 2 - 1 2 V mA Chip Disable to Data Retention Time (1) Operation Recovery Time (1) TCDR TR VIN VCC -0.2V or VIN 0.2V 0 TRC - - ns ns NOTE: Parameter guaranteed, but not tested. Microsemi Corporation reserves the right to change products or specifications without notice. September 2010 Rev. 18 (c) 2010 Microsemi Corporation. All rights reserved. 3 Microsemi Corporation * (602) 437-1520 * www.microsemi.com WS128K32-XXX AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55C TA +125C Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Symbol tRC tAA tOH tACS tOE tCLZ1 tOLZ1 tCHZ1 tOHZ1 -15 Min 15 -17 Max Min 17 15 0 -20 Max Min 20 17 0 3 0 -45 Max 0 -55 Max 0 Units Max 55 0 45 25 3 0 12 12 Min 55 45 35 20 3 0 12 12 Min 45 35 25 15 3 0 12 12 Min 35 25 20 12 3 0 -35 Max 0 17 10 12 12 Min 25 20 0 15 10 3 0 -25 Max 55 30 3 0 15 15 20 20 20 20 ns ns ns ns ns ns ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55C TA +125C Parameter Symbol Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH Min -15 Max 15 14 14 10 14 0 0 3 Min -17 Max Min 17 14 15 10 14 0 0 3 10 0 -20 Max 20 15 15 12 15 0 0 3 10 Min Max 25 20 20 15 20 0 0 3 12 0 -25 0 Min -35 35 25 25 20 25 0 0 4 15 0 Max Min Max 45 30 30 25 30 0 0 4 20 0 -45 Min -55 Max 55 45 45 25 45 0 0 4 25 0 25 0 Units ns ns ns ns ns ns ns ns ns ns 1. This parameter is guaranteed by design but not tested. FIGURE. 4 - AC TEST CIRCUIT AC Test Conditions Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V Notes: V Z is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . V Z is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. Microsemi Corporation reserves the right to change products or specifications without notice. September 2010 Rev. 18 (c) 2010 Microsemi Corporation. All rights reserved. 4 Microsemi Corporation * (602) 437-1520 * www.microsemi.com WS128K32-XXX FIGURE 5 - TIMING WAVEFORM - READ CYCLE CS# OE# READ CYCLE 2, (CS# = OE# = VIL, WE# = VIH) READ CYCLE 2 (WE# = VIH) FIGURE 6 - WRITE CYCLE - WE# CONTROLLED CS# WE# WRITE CYCLE 2, CS# CONTROLLED FIGURE 7 - WRITE CYCLE - CS# CONTROLLED CS# WE# WRITE CYCLE 2, CS# CONTROLLED Microsemi Corporation reserves the right to change products or specifications without notice. September 2010 Rev. 18 (c) 2010 Microsemi Corporation. All rights reserved. 5 Microsemi Corporation * (602) 437-1520 * www.microsemi.com WS128K32-XXX PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1) 4.60 (0.181) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)1 Note 1: Package Not Recommended For New Design ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Microsemi Corporation reserves the right to change products or specifications without notice. September 2010 Rev. 18 (c) 2010 Microsemi Corporation. All rights reserved. 6 Microsemi Corporation * (602) 437-1520 * www.microsemi.com WS128K32-XXX PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 528: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2L) 25.15 (0.990) 0.25 (0.010) MAX 5.10 (0.200) MAX 22.36 (0.880) 0.25 (0.010) MAX 0.25 (0.010) 0.10 (0.002) 0.23 (0.009) REF 24.0 (0.946) 0.25 (0.010) R 0.127 (0.005) 1.37 (0.054) MIN 0.004 2O / 9O 1.01 (0.040) 0.13 (0.005) 1.27 (0.050) TYP 0.38 (0.015) 0.05 (0.002) 20.31 (0.800) REF 0.940" TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Microsemi Corporation reserves the right to change products or specifications without notice. September 2010 Rev. 18 (c) 2010 Microsemi Corporation. All rights reserved. 7 Microsemi Corporation * (602) 437-1520 * www.microsemi.com WS128K32-XXX ORDERING INFORMATION W S 128K32 X - XXX X X X White Electronic Designs Corporation (Microsemi corporation) SRAM ORGANIZATION, 128Kx32 User configurable as 256Kx16 or 512Kx8 IMPROVEMENT MARK: N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades L = Low Power* ACCESS TIME (ns) PACKAGE TYPE: H1 = 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400) G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510) G2L = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 528) G4T1 = 40 mm Low Profile CQFP (Package 502) DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55C to +125C I = Industrial -40C to +85C C = Commercial 0C to +70C LEAD FINISH: Blank = Gold plated leads A = Solder dip leads Note 1: Package Not Recommended For New Designs * Low Power Data Retention only available in G2U, G2L, PackageTypes Microsemi Corporation reserves the right to change products or specifications without notice. September 2010 Rev. 18 (c) 2010 Microsemi Corporation. All rights reserved. 8 Microsemi Corporation * (602) 437-1520 * www.microsemi.com WS128K32-XXX DEVICE TYPE SPEED PACKAGE SMD NO. 128K x 32 SRAM Module 55ns 66 pin HIP (H1) 5962-93187 05H4X 128K x 32 SRAM Module 45ns 66 pin HIP (H1) 5962-93187 06H4X 128K x 32 SRAM Module 35ns 66 pin HIP (H1) 5962-93187 07H4X 128K x 32 SRAM Module 25ns 66 pin HIP (H1) 5962-93187 08H4X 128K x 32 SRAM Module 20ns 66 pin HIP (H1) 5962-93187 09H4X 128K x 32 SRAM Module 17ns 66 pin HIP (H1) 5962-93187 10H4X 128K x 32 SRAM Module 15ns 66 pin HIP (H1) 5962-93187 11H4X 128K x 32 SRAM Module 55ns 68 lead CQFP Low Profile (G4T)1 5962-95595 05HYX1 128K x 32 SRAM Module 45ns 1 68 lead CQFP Low Profile (G4T) 5962-95595 06HYX1 128K x 32 SRAM Module 35ns 68 lead CQFP Low Profile (G4T)1 5962-95595 07HYX1 128K x 32 SRAM Module 25ns 1 68 lead CQFP Low Profile (G4T) 5962-95595 08HYX1 128K x 32 SRAM Module 20ns 68 lead CQFP Low Profile (G4T)1 5962-95595 09HYX1 17ns 1 5962-95595 10HYX1 1 128K x 32 SRAM Module 68 lead CQFP Low Profile (G4T) 128K x 32 SRAM Module 15ns 68 lead CQFP Low Profile (G4T) 5962-95595 11HYX1 128K x 32 SRAM Module 55ns 68 lead CQFP/J (G2U) 5962-95595 05HMX 128K x 32 SRAM Module 45ns 68 lead CQFP/J (G2U) 5962-95595 06HMX 128K x 32 SRAM Module 35ns 68 lead CQFP/J (G2U) 5962-95595 07HMX 128K x 32 SRAM Module 25ns 68 lead CQFP/J (G2U) 5962-95595 08HMX 128K x 32 SRAM Module 20ns 68 lead CQFP/J (G2U) 5962-95595 09HMX 128K x 32 SRAM Module 17ns 68 lead CQFP/J (G2U) 5962-95595 10HMX 128K x 32 SRAM Module 15ns 68 lead CQFP/J (G2U) 5962-95595 11HMX 128K x 32 SRAM Module 55ns 68 lead CQFP/J (G2L) 5962-95595 05HAX 128K x 32 SRAM Module 45ns 68 lead CQFP/J(G2L) 5962-95595 06HAX 128K x 32 SRAM Module 35ns 68 lead CQFP/J(G2L) 5962-95595 07HAX 128K x 32 SRAM Module 25ns 68 lead CQFP/J(G2L) 5962-95595 08HAX 128K x 32 SRAM Module 20ns 68 lead CQFP/J(G2L) 5962-95595 09HAX 128K x 32 SRAM Module 17ns 68 lead CQFP/J(G2L) 5962-95595 10HAX 128K x 32 SRAM Module 15ns 68 lead CQFP/J(G2L) 5962-95595 11HAX Note 1: Package Not Recommended For New Design Microsemi Corporation reserves the right to change products or specifications without notice. September 2010 Rev. 18 (c) 2010 Microsemi Corporation. All rights reserved. 9 Microsemi Corporation * (602) 437-1520 * www.microsemi.com