tm
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
April 2007
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2
PACKAGE DIMENSIONS
QSC112, QSC113, QSC114
Plastic Silicon Infrared Phototransistor
Features
■
Tight production distribution
■
Steel lead frames for improved reliability in solder
mounting
■
Good optical-to-mechanical alignment
■
Plastic package is infrared transparent black to
attenuate visible light
■
Can be used with QECXXX LED
■
Black plastic body allows easy recognition from LED
Description
The QSC112/113/114 is a silicon phototransistor encap-
sulated in an infrared transparent, black T-1 package.
Package Dimensions
0.030 (0.76)
NOM
0.116 (2.95)
0.193 (4.90)
0.800 (20.3)
MIN
0.050 (1.27)
0.100 (2.54)
NOM
0.018 (0.46)
SQ. (2X)
0.155 (3.94)
EMITTER
0.052 (1.32)
0.032 (0.082)
REFERENCE
SURFACE
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (.25) on all non-nominal dimensions
unless otherwise specified.
Schematic
EMITTER
COLLECTOR
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2 2
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Notes:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics
(T
A
=25°C)
Note:
5.
λ
= 880 nm, AlGaAs.
Symbol Parameter Rating Units
T
OPR
Operating Temperature -40 to +100 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec °C
T
SOL-F
Soldering Temperature (Flow)
(2,3)
260 for 10 sec °C
V
CE
Collector-Emitter Voltage 30 V
V
EC
Emitter-Collector Voltage 5 V
P
D
Power Dissipation
(1)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
PS
Peak Sensitivity Wavelength 880 nm
Θ
Reception Angle ±4 °
I
CEO
Collector-Emitter Dark Current V
CE
= 10 V, Ee = 0 100 nA
BV
CEO
Collector-Emitter Breakdown I
C
= 1 mA 30 V
BV
ECO
Emitter-Collector Breakdown I
E
= 100 µA 5 V
I
C(ON)
On-State Collector Current QSC112 Ee = 0.5 mW/cm
2
, V
CE
= 5 V
(5)
14mA
On-State Collector Current QSC113 2.40 9.60
On-State Collector Current QSC114 4.00
V
CE(sat)
Saturation Voltage Ee = 0.5 mW/cm
2
, I
C
= 0.5 mA
(5)
0.4 V
t
r
Rise Time V
CC
= 5 V, R
L
= 100
Ω
, I
C
= 2 mA 5.0 µs
t
f
Fall Time 5.0
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2 3
Typical Performance Curves
Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
150°
160°
170°
180°
VCE - Collector-Emitter Voltage (V)
051015 20 25 30
I
CEO
- Dark Current (nA)
10
-3
10
-2
10
-1
10
0
10
1
VCE - Collector-Emitter Voltage (V)
0.1 1 10
I
L
- Normalized Light Current
10-2
10-1
100
101
Normalized to:
VCE = 5V
Ie = 0.5mW/cm2
TA= 25oC
Ie = 0.5mW/cm 2
Ie = 0.2mW/cm 2
Ie = 0.1mW/cm 2
Ie = 1mW/cm 2
TA - Ambient Temperature (oC)
25 50 75 100
I
CEO
- Normalized Dark Current
10-1
100
101
102
103
104
Normalized to:
VCE = 25V
TA= 25o
CVCE = 25V
VCE = 10V
Ee - Radiant Intensity (mW/cm2)
0.1 1
I
C(ON)
- Light Current (mA)
10-1
100
101
102
VCE = 5V
GaAs Light Source
QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSC112, QSC113, QSC114 Rev. 1.0.2 4
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which, (a) are intended for surgical implant into the body or
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component in any component of a life support,
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed Full Production
First Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete Not In Production This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I26
