2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEO VEBO IC IB 100 UNITS V 70 V 60 V 7.0 V 15 A 7.0 A 115 W PD TJ, Tstg -65 to +200 C JC 1.52 C/W MAX 1.0 UNITS mA 5.0 mA 0.7 mA 5.0 mA ELECTRICAL SYMBOL ICEV ICEV CHARACTERISTICS: (TC=25C unless otherwise noted) TEST CONDITIONS MIN VCE=100V, VEB=1.5V VCE=100V, VEB=1.5V, TC=150C ICEO IEBO VCE=30V VEB=7.0V BVCEO BVCER IC=200mA IC=200mA, RBE=100 VCE(SAT) VCE(SAT) IC=4.0A, IB=400mA IC=10A, IB=3.3A VBE(ON) hFE VCE=4.0V, IC=4.0A VCE=4.0V, IC=4.0A hFE 5.0 hfe VCE=4.0V, IC=10A VCE=4.0V, IC=1.0A, f=1.0kHz fT fhfe VCE=10V, IC=0.5A, f=1.0MHz VCE=4.0V, IC=1.0A, f=1.0kHz 2.5 MHz 10 kHz Is/b VCE=40V, t=1.0s 2.87 A 60 V 70 V 1.1 20 15 V 3.0 V 1.5 V 70 120 R1 (26-July 2013) 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (26-July 2013) w w w. c e n t r a l s e m i . c o m