MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCER 70 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 15 A
Continuous Base Current IB 7.0 A
Power Dissipation PD 115 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 1.52 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=100V, VEB=1.5V 1.0 mA
ICEV V
CE=100V, VEB=1.5V, TC=150°C 5.0 mA
ICEO V
CE=30V 0.7 mA
IEBO V
EB=7.0V 5.0 mA
BVCEO IC=200mA 60 V
BVCER I
C=200mA, RBE=100Ω 70 V
VCE(SAT) I
C=4.0A, IB=400mA 1.1 V
VCE(SAT) I
C=10A, IB=3.3A 3.0 V
VBE(ON) V
CE=4.0V, IC=4.0A 1.5 V
hFE V
CE=4.0V, IC=4.0A 20 70
hFE V
CE=4.0V, IC=10A 5.0
hfe V
CE=4.0V, IC=1.0A, f=1.0kHz 15 120
fT V
CE=10V, IC=0.5A, f=1.0MHz 2.5 MHz
fhfe V
CE=4.0V, IC=1.0A, f=1.0kHz 10 kHz
Is/b V
CE=40V, t=1.0s 2.87 A
2N3055 NPN
MJ2955 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3055 and
MJ2955 are complementary silicon power transistors
manufactured by the epitaxial base process, mounted
in a hermetically sealed metal case, designed for
general purpose switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
R1 (26-July 2013)
www.centralsemi.com
2N3055 NPN
MJ2955 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R2
www.centralsemi.com
R1 (26-July 2013)
