MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case: SOT23 IC = 200mA High Collector Current Case Material: Molded Plastic, "Green" Molding Compound; Complementary PNP Type: MMBT4126 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads. Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability UL Flammability Classification Rating 94V-0 Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) C SOT23 B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product MMBT4124-7-F Notes: Status Active Compliance AEC-Q101 Marking K1B Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 K1N = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September) K1B Date Code Key Year Code Month Code 2014 B 2015 C 2016 D 2017 E 2018 F 2019 G 2020 H 2021 I Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D MMBT4124 Document number: DS30105 Rev. 13- 2 1 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT4124 Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Value 30 25 5 200 Unit V V V mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 7) PD RJA RJL TJ,TSTG Value 310 350 403 357 350 -55 to +150 Unit mW C/W C/W C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 15 mm x 15mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the leads). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT4124 Document number: DS30105 Rev. 13- 2 2 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT4124 Thermal Characteristics and Derating Information 400 Thermal Resistance (C/W) Max Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Temperature (C) 350 300 250 200 D=0.5 150 100 D=0.1 Single Pulse D=0.2 50 0 100 D=0.05 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 Single Pulse. T amb=25C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation MMBT4124 Document number: DS30105 Rev. 13- 2 3 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT4124 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector-Base Cut-off Current Emitter Base Cut-off Current ON CHARACTERISTICS (Note 9) Symbol Min Max Unit BVCBO BVCEO BVEBO ICBO IEBO 30 25 5.0 - 50 50 V V V nA nA VCE(sat) VBE(sat) 120 60 - 360 0.30 0.95 V V Cobo Cibo - 4.0 8.0 pF pF Small Signal Current Gain hfe 120 480 - Current Gain-Bandwidth Product fT 300 - MHz DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Note: hFE - Test Condition IC = 10A, IE = 0 IC = 1.0mA, IB = 0 IE = 10A, IC = 0 VCB=20V, IE = 0 VEB=3.0V, IC = 0 IC = 2mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 50mA, IB = 5.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 1.0V, IC = 2.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT4124 Document number: DS30105 Rev. 13- 2 4 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT4124 Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 10 0.1 0.01 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 15 IC I B = 10 1 CAPACITANCE (pF) V BE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 1 Typical DC Current Gain vs. Collector Current T A = -25C T A = 125C TA = 25C 1 10 100 1,000 IC , COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Saturation Voltage vs. Collector Current MMBT4124 Document number: DS30105 Rev. 13- 2 5 T A = 75C 0.1 0.1 10 5 of 7 www.diodes.com 0 0.1 1 10 V R, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance Characteristics 100 April 2016 (c) Diodes Incorporated MMBT4124 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. Y Dimensions C X X1 Y Y1 C Y1 X Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 MMBT4124 Document number: DS30105 Rev. 13- 2 6 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT4124 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2016, Diodes Incorporated www.diodes.com MMBT4124 Document number: DS30105 Rev. 13- 2 7 of 7 www.diodes.com April 2016 (c) Diodes Incorporated