Order this document by BDX33B/D SEMICONDUCTOR TECHNICAL DATA . . . designed for general purpose and low speed switching applications. * High DC Current Gain -- hFE = 2500 (typ.) at IC = 4.0 * Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) -- BDX33B, 34B VCEO(sus) = 100 Vdc (min.) -- BDX33C, 34C * Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc -- BDX33B, 33C/34B, 34C * Monolithic Construction with Build-In Base-Emitter Shunt resistors * TO-220AB Compact Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII *Motorola Preferred Device DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 - 100 VOLTS 70 WATTS MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc Collector-Base Voltage VCB 80 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak IC 10 15 Adc Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 70 0.56 Watts W/_C - 65 to + 150 _C Rating Collector-Emitter Voltage Operating and Storage Junction Temperature Range TJ, Tstg CASE 221A-06 TO-220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.78 _C/W PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 80 100 -- -- 80 100 -- -- 80 100 -- -- -- -- 0.5 10 -- -- 1.0 5.0 IEBO -- 10 mAdc hFE 750 -- -- VCE(sat) -- 2.5 Vdc VBE(on) -- 2.5 Vdc VF -- 4.0 Vdc OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage1 (IC = 100 mAdc, IB = 0) VCEO(sus) BDX33B/BDX34B BDX33C/BDX34C Collector-Emitter Sustaining Voltage1 (IC = 100 mAdc, IB = 0, RBE = 100) VCER(sus) BDX33B/BDX34B BDX33C/BDX33C Collector-Emitter Sustaining Voltage1 (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) mAdc ICBO TC = 25_C TC = 100_C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain1 (IC = 3.0 Adc, VCE = 3.0 Vdc) Vdc ICEO TC = 25_C TC = 100_C Collector Cutoff Current (VCB = rated VCBO, IE = 0) mAdc BDX33B, 33C/34B, 34C Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C Diode Forward Voltage (IC = 8.0 Adc) 2 Vdc VCEX(sus) BDX33B/BDX34B BDX33C/BDX34C Collector Cutoff Current (VCE = 1/2 rated VCEO, IB = 0) 1 Pulse Test: Pulse Width 300 s, Duty Cycle 2 Pulse Test non repetitive: Pulse Width = 0.25 s. Vdc 2.0%. Motorola Bipolar Power Transistor Device Data r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 0.02 t1 0.03 0.01 0.02 SINGLE PULSE SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 RJC(t) = r(t) RJC RJC = 1.92C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 50 100 200 300 500 1000 Figure 1. Thermal Response 500 s IC, COLLECTOR CURRENT (AMP) 10 5.0 ms 1.0 ms 5.0 TC = 25C 2.0 dc 1.0 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.2 0.1 0.05 0.02 1.0 20 100 s 500 s 10 IC, COLLECTOR CURRENT (AMP) 20 5.0 ms 1.0 ms 5.0 2.0 1.0 0.5 0.2 0.1 TC = 25C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.05 BDX34B BDX34C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.02 1.0 70 100 100 s BDX33B BDX33C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Active-Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) = 150_C. TJ(pk) may be calculated from the data in Fig. . At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 300 TJ = 25C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TJ = 25C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 2.0 5.0 Cib 70 50 PNP NPN 1.0 Cob 100 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 Figure 3. Small-Signal Current Gain Motorola Bipolar Power Transistor Device Data 30 0.1 PNP NPN 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 4. Capacitance 3 NPN BDX33B, 33C PNP BDX34B, 34C 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 TJ = 150C 5000 3000 2000 25C 1000 - 55C 5000 2000 500 300 200 300 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 25C 1000 500 0.1 TJ = 150C 3000 - 55C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 0.1 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. DC Current Gain 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 0.3 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 6. Collector Saturation Region 3.0 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25C 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.5 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data 10 PACKAGE DIMENSIONS -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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