FDC6561AN | De eee FAIRCHILD ape oe tere SEMICONDUCTOR FDC6561AN Dual N-Channel, Logic Level, PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. SuperSOT-6 pint> & G1 SuperSot-6 Absolute Maximum RatingsT, = 25 C unless otherwise note Features September 1998 PRELIMINARY # 25A,30V. Rogen = 0.0952 @ Vag = 10 V Rosiom = 0-145Q @ Veg = 4.5 = Very fast switching. = Low gate charge (2.1nC typical). SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Symbol | Parameter FDC6561AN Units Voss Drain-Source Voltage 30 Vv Vess Gate-Source Voltage - Continuous +20 v I Drain Current - Continuous 25 A - Pulsed 10 Py Maximum Power Dissipation (Note 1a) 0.96 WwW (Note 1b) 09 (Note 1c) 07 T,Tszg | Operating and Storage Temperature Range -55 to 150 Cc THERMAL CHARACTERISTICS Raa Thermal Resistance, Junction-to-Ambient (note 12) 130 CW Rac Thermal Resistance, Junction-to-Case (Note 1) 60 CW 3-28 FOC6561AN Rev.B2 ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) U Symbol | Parameter Conditions | Min | Typ | Max | Units Q OFF CHARACTERISTICS oi BV oss Drain-Source Breakdown Voltage Veg = OV, [>= 250 pA 30 V 2 ABV ig AT, Breakdown Voltage Temp. Coefficient |, = 250 pA, Referenced to 25 C 23.6 mV/C > loss Zero Gate Voltage Drain Current Vos = 24V, Vag= OV 1 HA T,=55C 10 pA locse Gate - Body Leakage, Forward Veg = 20 V, Vig = OV 100 nA Nossa Gate - Body Leakage, Reverse Vog = 20 V, V,,=0V -100 nA ON CHARACTERISTICS (note 2) Vossen Gate Threshold Voltage Vos = Veg: Ip = 250 pA 1 1.8 3 Vv AV conf AT, Gate Threshold VoltageTemp.Coefficient |, = 250 WA, Referenced to 25C 4 mVPC Rosiony Static Drain-Source On-Resistance Veg = 10V, 1, =2.5A 0.082 | 0.095 Q _[T,=125 0.122 | 0.152 Vog= 4.5 V, Ip=2.0A 0.113 | 0.145 Voter On-State Drain Current Veg = 10 V, Vp, = 5 V 10 A Ors Forward Transconductance Vpg= SV, L=25A 5 8 DYNAMIC CHARACTERISTICS C., Input Capacitance Vog = 15.V, Veg = 0 V, 220 pF Coss Output Capacitance f = 1.0 MHz 50 pF C., Reverse Transfer Capacitance 25 pF SWITCHING CHARACTERISTICS (note 2) toon Tum - On Delay Time Voo=5V, I = tA, 6 12 ns t Tum - On Rise Time Veg = 10 V, Reg = 6Q 10 18 ns toca Tum - Off Delay Time 12 22 ns t Tum - Off Fall Time 2 6 ns Q, Total Gate Charge Vos = 15 V, L=2.5A 23 3.2 nc Q., Gate-Source Charge Veg =5 V 0.7 1 nc Qa, Gate-Drain Charge 09 13 nc DRAIN-SOURCE DIODE CHARACTERISTICS I, Continuous Source Diode Current 0.75 A Von Drain-Source Diode Forward Voltage Vege OV, I=0.75A (Note2) 0.78 12 Vv Notes: 1. A, is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Ris guaranteed by design while R,,,, is determined by the user's board design. J ie . 180CAW on a 0.0015 in of pad i of 20z copper. x \ b. 140C/W on a 0.005 in pad of 202 copper. a. 130C AW on a 0.125 in pad of 202 copper. eee 2. Pulse Test: Pulse Width < 300us, Duly Cycle < 2.0%. 3-29 FDC6561AN Rev.B2 FDC6561AN Typical Electrical Characteristics ip , DRAIN-SOURCE CURRENT {A) 1 2 3 Vos, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 6 1 Ip225A Veg = 10V > 08 Rps(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE, 2 @ a Q ney a Figure 3. On-Resistance Variation 50 Ty, JUNCTION TEMPERATURE (C) with Temperature. 125 150 o Ty = 55C 10 jee =5V ( a Ip , DRAIN CURRENT (A) ny Figure 5.Transfer Characteristics. 2 Vos . GATE TO SOURCE VOLTAGE (V) 5 6 R psiony , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 4 Ip, DRAIN CURRENT (A) 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 03 0.26 Ip=1.3A O2 0.15 we a Ta = 126C [ Fi pson) , ON-RESISTANCE (OHM) O41 Zz 0.05 2 4 6 8 10 Vag . GATE TO SOURCE VOLTAGE (V} Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0.01 0.001 ls , REVERSE DRAIN CURRENT (A) 0.0001 0 02 04 06 08 1 1.2 14 Vgp , BODY DIODE FORWARD VOLTAGE (Vv) Figure 6. Body Diode Forward Voltage Variation with Source Current 3-30 FDC6561AN Rev.B2 Typical Electrical Characteristics (continued) Vag . GATE-SOURCE VOLTAGE (V) 2 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Vgg = 10V SINGLE PULSE Raia=180CW Ta= 25C ip, DRAIN CURRENT (A) 04 0.3 1 3 10 30 50 Vg DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.01 0.0001 0.007 0.01 500 200 c s & 190 Zz < E Q 50 a < Oo 20 10. 0.1 05 1 2 5 10 30 Vos DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 5 4 SINGLE PULSE Rasa= 180C < Taz 25C 23 A c w 3 G2 1 0 0.01 04 1 10 100 300 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. Raia) =r) * Raia Roja =180CW + _ Pipk} pete wey TyTa =P Rial Duty Cycle, D=1,/t 2 ~ 0.4 1 10 100 300 1), TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 3-31 FDC6561AN Rev.B2 NVL9S9DG4