MG200Q2YS40
2001-08-16
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q2YS40
High Power Switching Applications
Motor Control Applications
l High input impedance
l High speed : tf = 0.5µs (max)
t
rr = 0.5µs (max)
l Low saturation voltage
: V
CE (sat) = 4.0V (max)
l Enhancement-mode
l The electrodes are isolated from case
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 1200 V
Gate-emitter voltage VGES ±20 V
DC IC 200
Collector current
1ms ICP 400
A
DC IF 200
Forward current
1ms IFM 400
A
Collector power dissipation
(Tc = 25°C) PC 1300 W
Junction temperature Tj 150 °C
Storage temperature range Tstg 40 ~ 125 °C
Isolation voltage VIsol 2500
(AC 1 min.) V
Screw torque (Terminal / mounting) 3 / 3 N·m
JEDEC
JEITA
TOSHIBA 2-109C1A
Weight: 430g (typ.)
Unit: mm
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MG200Q2YS40
2001-08-16
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGES VGE = ±20V, VCE = 0 ±20 µA
Collector cut-off current ICES VCE = 1200V, VGE = 0 2.0 mA
Gate-emitter cut-off voltage VGE (OFF) IC = 200mA ,VCE = 5V 3.0 6.0 V
Collector-emitter saturation voltage VCE (sat) IC = 200A, VGE = 15V 3.0 4.0 V
Input capacitance Cies VCE = 10V, VGE = 0, f = 1MHz 24000 pF
Rise time tr 0.3 0.6
Turn-on time ton 0.4 0.8
Fall time tf 0.2 0.5
Switching time
Turn-off time toff 0.8 1.5
µs
Forward voltage VF IF = 200A, VGE = 0 2.0 3.0 V
Reverse recovery time trr IF = 200A, VGE = 10V
di / dt = 300A / µs 0.25 0.5 µs
Transistor 0.096
Thermal resistance Rth (j-c) Diode 0.25
°C / W
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MG200Q2YS40
2001-08-16
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2001-08-16
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2001-08-16
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2001-08-16
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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000707EA
A
RESTRICTIONS ON PRODUCT USE
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