ee FAIRCHILD ee SEMICONDUCTOR wm FMMT549 B SuperSOT-3 (SOT-23) PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter FMMT549 Units VcEo Collector-Emitter Voltage 30 Vv Vigo Collector-Base Voltage 35 Vv VeRO Emitter-Base Voltage 5 Vv Ie Collector Current - Continuous 1 A - Peak Pulse Current 2 Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta 2s-cunessonennse noes Max Symbol Characteristic Units FMMTS49 Py Total Device Dissipation* 500 mW Derate above 25C 4 mWi/C Rua Thermal Resistance, Junction to Ambient 250 C! *Device mounted on FR-4 PCB 4.5" X 5"; mounting pad 0.02 in? of 20z copper. @ 1998 Fairchild Semiconducio Corporation Page lof 2 immi649.lwpPrPB 7/10/98 revB 6VS_LINWSA PNP Low Saturation Transistor 6VS_LINWSA {continued} Electrical Characteristics Ta 225C unless omenase noted Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS BVcEo Collector-Emitter Breakdown Voltage |i, = 10 mA 30 Vv BY cro Collector-Base Breakdown Voltage Ig = 100 pA 35 V BVeRO Emitter-Base Breakdown Voltage le = 100 pA 5 Vv leno Collector Cutoff Current Vep = 30 V 100 nA Vp = 30 V, Ta=100C 1o | uA leno Emitter Cutoff Current Ver = 4V 100 nA ON CHARACTERISTICS* Hee DC Current Gain Ic = 50 MA, Vee =2V 70 - Ic = 500 mA, Vce = 2V 100 300 Ic = 1A, Voce = 2V 80 Ic = 2A, Voce =2V AO VoE(sat) Collector-Emitter Saturation Voltage lc=1A lp=100mA 500 mv lc =2A, Ig = 200 mA 750 mv VBE(eat) Base-Emitter Saturation Voltage Ic =1A,lgp=100mA 1.25 Vv VBE(on) Base-Emitter On Voltage lc=1A,VceE=2V 1 SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance Vep = 10 V, le = 0, f = 1MHz 25 pF Fr Transition Frequency lc = 100 MA,Vce = 5 V, f=100MHz 100 MHz *Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% @ 1998 Fairchild Semiconducto Corporation Page 2o0f 2 immi649.lwpPrPB 7/10/98 revB TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT QS FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE GHANGES WITHOUT FURTHER NOTIGE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNGTION OR DESIGN. FAIRGHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.