SIEM fn Ss Preliminary data BUZ 102SL-4 SIPMOS Power Transistor D1 oo N.c. C4 61 o1 ag 02 4 wIHOa kN N nN * Quad-channel 02 0 fn s2 * Enhancement mode a ae Ee : < * Logic level 4 ta _3f os 1S : vpsosios * Avalanche-rated * dv/dt rated Type Vos lb Fipscon) Package Ordering Code BUZ 102SL-4 [55 V 6.2A 0.033 Q P-DSO-28 C67078-S....-.. Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active lb A Ty = 25 C 6.2 Pulsed drain current one channel active !Dpuls Ty = 25 C 24.8 Avalanche energy, single pulse Eas mJ Ip = 6.2 A, Vpp = 25 V, Rag = 25 2 L= 12.7 mH, T,=25 C 245 Reverse diode dv/dt dv/dt kV/us Iz =6.2 A, Vos = 40 V, die/dt = 200 A/us Tmax = 175 C 6 Gate source voltage Ves +14 V Power dissipation ,one channel active Prot W Ty = 25C 2.4 Operating temperature Tj -55...4175 |C Storage temperature T tg -55 ...+.175 IEC climatic category, DIN IEC 68-1 55 / 175/56S| EM _ BUZ 102SL-4 oe ee ie Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. |typ. |max. Thermal resistance, junction - soldering point 1) Rings |- - tod |K/W Thermal resistance, junction - ambient 2) AihyA {> - 62.5 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70um thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at 7j = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage Vas = 9 V, Ip = 0.25 mA, 7) = 25 C ViBR)DSS 55 Gate threshold voltage Vas=Vps, /p = 90 LA Vesith) 1.2 1.6 Zero gate voltage drain current Vos = 55 V, Vag = OV, 7) =-40 C Vos = 55 V, Vag = OV, 7) = 25 C Vos = 55 V, Vag = OV, 7] = 150 C loss 0.1 0.1 100 Gate-source leakage current Vag = 20 V, Vps = 0 V lass 10 100 nA Drain-Source on-resistance Veg =5V, Ip=6.2A Fpsvon) 0.025 0.033SIEM Preliminary data BUZ 102SL-4 Electrical Characteristics, at 7) = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance Vos2 2+ !p * Rosonymax, /p = 6.2 A Os 11 Input capacitance Vag =O0V, Vos = 25 V, f= 1 MHz Cigg 1380 1730 Output capacitance Vag =O0V, Vos = 25 V, f= 1 MHz Coss 410 515 Reverse transfer capacitance Vas =0V, Vos = 25 V, f= 1 MHz Cig 230 290 pF Turn-on delay time Vop = 30 V, Veg =5V, Ip =6.2A Ag = 3.6 Q fg(on) 25 40 Rise time Vop = 30 V, Veg =5V, Ip =6.2A Ag =3.60 37 55 Turn-off delay time Vop = 30 V, Veg =5V, Ip =6.2A Ag = 3.6 Q 15 115 Fall time Vop = 30 V, Vag =5V, Ip =6.2A Ag =3.62 37 55 ns Gate charge at threshold Vop = 40 V;, ID2 0.1 A, Ves =0to1V 2.5 3.75 Gate charge at 5.0 V Vop =40V, lb =6.2A, Vas =0to5V 37 55 Gate charge total Vop =40V, lb =6.2A, Ves =0to 10 V 62 93 nc Gate plateau voltage Vop = 40 V, Ip =6.2A Viplateau) 2.6S| E M | Prelimi BUZ 102SL-4 reliminary data Electrical Characteristics, at 7) = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current | /s A Ty = 25 C - - 6.2 Inverse diode direct current, pulsed Is Ta = 25 C - - 24.8 Inverse diode forward voltage Vsp V Veg =OV, lp =12.4A - 0.9 1.7 Reverse recovery time tr ns Va = 30 V, Ip=lg dig/dt = 100 A/us - 70 105 Reverse recovery charge Qy nc Vp = 30 V, IF=lg dif/dt = 100 A/us - 0.15 0.25S| E M | _ BUZ 102SL-4 al ol omniniiniiel Preliminary data Power dissipation Drain current Pot = (Ta) lp = F(T p) parameter: Veg 25 V 6.5 A 5.5 Prot D 5.0 45 4.0 3.5 3.0 2.5 2.0 0.5 0.0 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 C 180 ~ T, ~ T,SIEM: hy Preliminary data BUZ 102SL-4 Typ. output characteristics lb = f(Yps) parameter: f, = 80 us , 7; = 25 C 147 Ip Tow Arba 10 9 8 7 6 5 4 3 2 { 0 0.0 05 10 15 20 25 30 35 40 V 50 Vos Typ. transfer characteristics / = f (Vag) parameter: f, = 80 Us Vps22 x /p x Rpsionymax 80 60 40 30 20 10 Oo. 61 2 3 4 5 6 7 8 V_ 10 Typ. drain-source on-resistance Fos (on) = FUp) parameter: f, = 80 us, Tj = 25C 0.10 Q 0.08 Fog (on) 0.07 0.06 0.05 0.04 0.03 e f 0.02 Veg [V] = 0.01f a b c de f g hi j k 30 35 40 45 5.0 55 60 65 7.0 80 100 0.00 0 2 4 6 8 A 12 hhSIEM: hy Preliminary data BUZ 102SL-4 Drain-source on-resistance Rpg (on) = f(7}) parameter: Ip =6.2 A, Vag = 5 V 0.09 Qa Fog (onP.07 0.06 4 7 ~ vu? 0.05 77 98% | 7 a | -f A 0.04 via i v A -7| typ L_ a7] | 0.03 [>> TT -7 a | 0.02: =" 0.01 0.00 -60 -20 20 60 100 C 180 pe T. Typ. capacitances C=f(Vps) parameter: Vas = OV, f= 1MHz 104 pF 108 Gate threshold voltage Ves (thy = (7) parameter: Vas = Vos, Ip = 90 HA Vesithy 4.6 Vv 4.0 3.6 3.2 2.8 2.4 2.0 0.8 0.4 0.0 -60 -20 20 60 100 C 180 Forward characteristics of reverse diode lp = f(Vgp) parameter: qT, t, = 80 us I 108 102 101 25 C typ Tes 175 C typ 7, =25 C (98%) T=175 C (98%) 10 00 04 08 12 16 20 24 V 30 VgpSIEAAEAIG a BUZ 102SL-4 Si E M hy Preliminary data Avalanche energy Eng = f( T) Typ. gate charge parameter: |p = 6.2 A, Vop = 25 V Vas = F(QGate) Rag = 25 2, L = 12.7 mH parameter: Ip puis = 8 A 260 16 mJ Vv 220 E Vv, AS 200 Gs 12 180 160 10 140 8 120 100 6 80 60 4 40 2 20 0 0 20 40 60 80 100 120 140 C 180 0 10 20 30 40 50 60 70 nC _ 9g0 > 7; Pate Drain-source breakdown voltage Viaryoss = /(7)) (BR)DSS -60 -20 20 60 100 C 180 p T.