MCC 224 MCD 224 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM ITRMS = 2x 400 A 2x 240 A ITAVM = VRRM = 2000/2200 V 3 Type V V 2100 2000 MCC 224-20io1 MCD 224-20io1 2300 2200 MCC 224-22io1 MCD 224-22io1 Symbol Conditions ITRMS ITAVM TVJ = TVJM TC = 85C; 180 sine ITSM TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms TVJ = TVJM; VR = 0 6 7 1 3 1 Maximum Ratings (50 Hz) (60 Hz) 8000 8500 A A t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 7000 7500 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 320 000 303 000 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 245 000 240 000 A2s A2s 100 A/s 500 A/s 1000 V/s 120 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40...+130 130 -40...+125 C C C 3000 3600 V~ V~ 4.5 - 7 11 - 13 Nm Nm 750 g TVJ = TVJM; repetitive, IT = 750 A f = 50 Hz; tp = 200 s; VD = 2/3 VDRM; IG = 1 A; diG /dt = 1 A/s non repetitive, IT = ITAVM (dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM; RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM; tp = 30 s IT = IT(AV)M; tp = 500 s PGAV VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M6) Terminal connection torque (M6) Weight Typical including screws 7 6 5 4 5 4 2 A A (di/dt)cr 2 1 400 240 I2t 3 5 4 2 t = 1 min t=1s Features * International standard package * Direct Copper Bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Keyed gate/cathode twin pins Applications * Motor control, softstarter * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Solid state switches Advantages * Simple mounting * Improved temperature and power cycling * Reduced protection circuits Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20091008c 1-4 (c) 2009 IXYS All rights reserved http://store.iiic.cc/ MCC 224 MCD 224 Symbol Conditions typ. max. IRRM, IDRM VR / VD = VRRM / VDRM TVJ = TVJM 40 mA VT IT = 600 A TVJ = 25C 1.4 V VT0 rt For power-loss calculations only TVJ = TVJM 0.8 0.76 V mW VGT VD = 6 V VD = 6 V TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 2 3 150 220 V V mA mA VGD IGD VD = /3 VDRM; TVJ = TVJM 0.25 10 V mA IL tp = 30 s; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/s TVJ = 25C 200 mA IH VD = 6 V; RGK = ; TVJ = 25C 150 mA tgd VD = 1/2VDRM IG = 1 A; diG /dt = 1 A/s TVJ = 25C 2 s tq VD = 2/3 VDRM dv/dt = 50 V/s; -di/dt = 10 A/s IT = 300 A; VR = 100 V; tp = 200 s TVJ = TVJM QS IRM IT = 300 A; -di/dt = 50 A/s TVJ = TVJM IGT RthJC RthJK dS dA a 2 800 Characteristic Values 200 per thyristor; DC current per module per thyristor; DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration IT / F 400 [A] 200 TVJ = 125C TVJ = 25C 0 0.0 760 275 C A 0.139 0.069 0.179 0.089 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 0.4 0.8 1.2 1.6 2.0 VT / F [V] Fig. 1 Forward characteristics 10 1: IGT, TVJ = 130C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C s Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Dimensions in mm (1 mm = 0.0394") 600 6 VG 1 1 3 2 4 5 [V] 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD, TVJ = 130C 0.1 10-3 10-2 10-1 100 101 102 IG [A] Fig. 2 Gate trigger characteristics 100 TVJ = 25C typ. limit 10 tgd [s] 1 0.1 10 0.01 100 0.1 IG [A] 1000 1 10000 10 Fig. 3 Gate trigger delay time IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved 20091008c 2-4 MCC 224 MCD 224 8000 400 10 6 V R = 0V 50 Hz 80% V 350 RRM T VJ = 45 C 6000 DC 180 sin 120 60 30 300 I T A V M [A] 2 I 2 t [A s] I T S M [A] T VJ = 130 C 4000 10 5 250 200 150 2000 100 50 0 0.001 10 4 0.01 0.1 1 0 1 10 25 50 75 100 125 150 T C [ C] t [ms] t [s] Fig. 5 i2t versus time (1-10 ms) Fig. 4 Surge overload current ITSM: Crest value, t: duration 0 Fig. 5a Maximum forward current at case temperature 500 R thKA K/W 0.1 0.2 0.3 0.4 0.6 0.8 1 P t o t [W ] 400 300 DC 180 sin 120 60 30 200 100 Fig. 6 Power dissipation vs. on-state current and ambient temperature 0 0 100 200 300 0 25 50 I TAVM [A] 75 100 125 150 T A [ C] 2000 R thKA K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 P t o t [W ] 1500 1000 Circuit B6 3xMCC224 Fig. 7 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature 500 0 0 200 400 I davm 600 [A] 0 25 50 75 100 125 150 T A [ C] IXYS reserves the right to change limits, test conditions and dimensions. 20091008c 3-4 (c) 2009 IXYS All rights reserved http://store.iiic.cc/ MCC 224 MCD 224 2000 R thKA K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 P t o t [W ] 1500 1000 Circuit W3 3xMCC224 500 0 0 100 200 300 400 I RMS [A] 500 0 25 50 75 100 125 150 T A [ C] Fig. 8 3~ AC-controller: Power dissipation vs. RMS output current & ambient temperature 0.25 RthJC for various conduction angles d: d DC 180 120 60 30 Z t h J C [K /W ] 0.20 0.15 30 60 120 180 DC 0.10 Constants for ZthJC calculation: 0.05 0.00 10 -3 10 -2 10 -1 10 0 RthJC (K/W) 0.139 0.148 0.156 0.176 0.214 10 1 10 2 t [s] i 1 2 3 4 Rthi (K/W) 0.0067 0.0358 0.0832 0.0129 ti (s) 0.00054 0.098 0.54 12 Fig. 9 Transient thermal impedance junction to case 0.30 RthJK for various conduction angles d: d DC 180 120 60 30 Z t h J K [K /W ] 0.25 0.20 0.15 30 60 120 180 DC 0.10 0.05 0.00 10 -3 10 -2 10 -1 10 0 10 1 t [s] Fig. 10 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. RthJK (K/W) 0.179 0.188 0.196 0.216 0.256 Constants for ZthJK calculation: 10 2 i 1 2 3 4 5 Rthi (K/W) 0.0067 0.0358 0.0832 0.0129 0.0400 ti (s) 0.001 0.080 0.200 1.000 20091008c 4-4 (c) 2009 IXYS All rights reserved http://store.iiic.cc/