High Directivity
Monolithic Amplifier
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Product Features
• 3V & 5V operation
• no external biasing circuit required
• internal DC blocking at RF input and output
• high directivity, 20 dB typ.
• wide bandwidth, 0.5 to 2.5 GHz
• low noise figure, 5.5 dB typ.
• output power, up to +18.2 dBm typ.
• low cost
Typical Applications
• buffer amplifier
• cellular
• PCN
Pin description
Function Pin Number Description
RF IN 3 RF input pin.
RF OUT 6 RF output pin.
DC 1 Bias pin
GND 2,4,5,7,8 Connections to ground. Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
General Description
VNA-25 is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot.
It is enclosed in an 8-lead SOIC package. VNA-25 is fabricated using GaAs MESFET technology. Expect-
ed MTBF at 85°C case temperature is 40,000 years at 2.8V, 2,000 at 5V.
VNA-25+
VNA-25
REV. F
M108520
VNA-25
061219
0.5-2.5 GHz
CASE STYLE: XX211-1
PRICE: $2.50 ea. QTY. (25)
+ RoHS compliant in accordance
with EU Directive (2002/95/EC)
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications.