BD136/138/140 BD136/138/140 Medium Power Linear and Switching Applications * Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD136 : BD138 : BD140 Value - 45 - 60 - 80 Units V V V VCEO Collector-Emitter Voltage : BD136 : BD138 : BD140 - 45 - 60 - 80 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) - 1.5 A ICP Collector Current (Pulse) - 3.0 A IB Base Current - 0.5 A PC Collector Dissipation (TC=25C) 12.5 W PC Collector Dissipation (Ta=25C) 1.25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD136 : BD138 : BD140 Test Condition IC = - 30mA, IB = 0 Min. Typ. Max. - 45 - 60 - 80 Units V V V ICBO Collector Cut-off Current VCB = - 30V, IE = 0 - 0.1 A IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 A hFE1 hFE2 hFE3 * DC Current Gain VCE = - 2V, IC = - 5mA VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 150mA VCE(sat) * Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA VBE(on) * Base-Emitter ON Voltage VCE = - 2V, IC = - 0.5A 25 25 40 250 - 0.5 V -1 V * Pulse Test: PW=350s, duty Cycle=2% Pulsed hFE Classificntion Classification 6 10 16 hFE3 40 ~ 100 63 ~ 160 100 ~ 250 (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BD136/138/140 Typical Characteristics 100 60 50 40 30 20 10 0 -10 -100 IC = 20 IB -400 -350 IB 70 -450 IC = 10 hFE, DC CURRENT GAIN 80 VCE(sat)[mV], SATURATION VOLTAGE -500 VCE = -2V 90 -300 -250 -200 -150 -100 -50 -0 -1E-3 -1000 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage -10 -1.1 -1.0 IC MAX. (Pulsed) -0.5 -0.4 BD138 -0.2 BD140 -0.3 -0.1 BD136 IC[A], COLLECTOR CURRENT -0.6 -1 DC ) (on V V BE 5 =V CE -0.7 s -0.8 10us IC MAX. (Continuous) 0u 10 t) (sa V BE 0 I B 1 IC = -0.9 1 ms VBE[V], BASE-EMITTER VOLTAGE -0.01 -0.01 -0.1 -1E-3 -0.01 -0.1 -1 -10 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area 20.0 PC[W], POWER DISSIPATION 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BD136/138/140 Package Demensions 8.00 0.30 11.00 o3.20 0.10 0.20 3.25 0.20 14.20MAX 3.90 0.10 TO-126 (1.00) (0.50) 0.75 0.10 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.30 13.06 0.75 0.10 0.20 1.75 0.20 1.60 0.10 +0.10 0.50 -0.05 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2000 Fairchild Semiconductor International Rev. E