IPZ40N04S5L-7R4
OptiMOS™-5 Power-Transistor
Features
• OptiMOS™- power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25°C, VGS=10V1) 40 A
TC=100°C, VGS=10V2) 33
Pulsed drain current2) ID,pulse TC=25°C 160
Avalanche energy, single pulse2) EAS ID=20A 24 mJ
Avalanche current, single pulse IAS -40 A
Gate source voltage VGS - ±16 V
Power dissipation Ptot TC=25°C 34 W
Operating and storage temperature Tj,Tstg - -55 ... +175 °C
Value
VDS 40 V
RDS(on),max 7.4 mW
ID40 A
Product Summary
PG-TSDSON-8-32
Type Package Marking
IPZ40N04S5L-7R4 PG-TSDSON-8-32 5N04L74
1
1
Rev. 1.1
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IPZ40N04S5L-7R4
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - - 4.4 K/W
Thermal resistance, junction -
ambient RthJA 6 cm2cooling area3) - - 60
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID= 1mA 40 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=10µA 1.2 1.6 2.0
Zero gate voltage drain current IDSS VDS=40V, VGS=0V,
Tj=25°C - - 1 µA
VDS=40V, VGS=0V,
Tj=125°C2) - - 100
Gate-source leakage current IGSS VGS=16V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=4.5V, ID=20A - 7.9 10.7 mW
VGS=10V, ID=20A - 6.1 7.4
Values
Rev. 1.1
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IPZ40N04S5L-7R4
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance Ciss - 690 920 pF
Output capacitance Coss - 160 213
Reverse transfer capacitance Crss - 10 18
Turn-on delay time td(on) - 2 - ns
Rise time tr- 2 -
Turn-off delay time td(off) - 6 -
Fall time tf- 5 -
Gate Charge Characteristics
2)
Gate to source charge Qgs - 2.0 2.7 nC
Gate to drain charge Qgd - 3.0 4.5
Gate charge total Qg- 13 17
Gate plateau voltage Vplateau - 3.0 - V
Reverse Diode
Diode continous forward current2) IS- - 40 A
Diode pulse current1) IS,pulse - - 160
Diode forward voltage VSD VGS=0V, IF=20A,
Tj=25°C - 0.8 1.1 V
Reverse recovery time1) trr VR=20V, IF=40A,
diF/dt=100A/µs - 26 - ns
Reverse recovery charge1) Qrr - 16 - nC
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by package; with an RthJC = 4.4K/W the chip is able to carry 47A at 25°C.
TC=25°C
2) The parameter is not subject to production test- verified by design/characterization.
Values
VGS=0V, VDS=25V,
f=1MHz
VDD=20V, VGS=10V,
ID=40A, RG=3.5W
VDD=32V, ID=40A,
VGS=0 to 10V
Rev. 1.1
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IPZ40N04S5L-7R4
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS = 10 V ID= f(TC); VGS = 10 V
3 Safe operating area 4 Max. transient thermal impedance
ID= f(VDS); TC= 25 °C; D= 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
1 µs
10 µs
100 µs
150 µs
1
10
100
1000
0.1 1 10 100
ID[A]
VDS [V]
0
10
20
30
40
50
0 50 100 150 200
Ptot [W]
TC[°C]
0
10
20
30
40
50
0 50 100 150 200
ID[A]
TC[°C]
Rev. 1.1
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IPZ40N04S5L-7R4
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID= f(VDS); Tj= 25 °C RDS(on) = f(ID); Tj= 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID= f(VGS); VDS = 6V RDS(on) = f(Tj); ID= 20 A; VGS = 10 V
parameter: Tj
2
4
6
8
10
12
14
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
2.75 V
3 V
3.5 V
4.5 V
10 V
0
40
80
120
160
0123
ID[A]
VDS [V]
2.75 V 3 V 3.5 V
4.5 V
10 V
2
7
12
17
22
0 40 80 120 160
RDS(on) [mW]
ID[A]
-55 °C
25 °C
175 °C
0
40
80
120
160
1.5 2.5 3.5 4.5
ID[A]
VGS [V]
Rev. 1.1
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IPZ40N04S5L-7R4
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF[A]
VSD [V]
10 µA
100 µA
0
0.5
1
1.5
2
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
102
103
104
0 10 20 30
C[pF]
VDS [V]
101
25 °C
100 °C
150 °C
1
10
100
1 10 100 1000
IAV [A]
tAV [µs]
25 °C
175 °C
100
101
102
103
0 0.4 0.8 1.2
IF[A]
VSD [V]
Rev. 1.1
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IPZ40N04S5L-7R4
13 Avalanche energy 14 Drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID= 1 mA
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID= 40 A pulsed
parameter: VDD
VGS
Qgate
Vgs(th)
Qg(th)
Qgs Qgd
Qsw
Qg
36
38
40
42
44
46
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
8 V 32 V
0
1
2
3
4
5
6
7
8
9
10
0 4 8 12 16
VGS [V]
Qgate [nC]
40 A
20 A
10 A
0
10
20
30
40
50
60
25 75 125 175
EAS [mJ]
Tj[°C]
Rev. 1.1
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IPZ40N04S5L-7R4
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (
www.infineon.com
).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8 2015-07-27
IPZ40N04S5L-7R4
Revision History
Version
Revision 1.0
Revision 1.1
Date
Update of package name
2015-05-05
2015-07-27 Final Data Sheet
Changes
Rev. 1.1
page 9 2015-07-27