2SA1416T - ON Semiconductor L.L.C.

2SA1416 / 2SC3646

No.2005-1/5

Features

•Adoption of FBET, MBIT processes.

•High breakdown voltage and large current capacity.

•Fast switching speed.

•Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.

Specifications ( ) : 2SA1416

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO (--)120 V

Collector-to-Emitter Voltage VCEO (--)100 V

Emitter-to-Base Voltage VEBO (--)6 V

Collector Current IC(--)1 A

Collector Current (Pulse) ICP (--)2 A

Collector Dissipation PC500 mW

Mounted on a ceramic board (250mm

✕0.8mm)

1.3 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Marking 2SA1416 : AB

2SC3646 : CB

www.semiconductor-sanyo.com/network

Ordering number : EN2005B

31010EA TK IM / O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

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SANYO Semiconductors

DATA SHEET

2SA1416 / 2SC3646

PNP / NPN Epitaxial Planar Silicon Transistors

High-Voltage Switching Applications

2SA1416 / 2SC3646

No.2005-2/5

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Collector Cutoff Current ICBO VCB=(--)100V, IE=0A (--)100 nA

Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA

DC Current Gain hFE VCE=(--)5V, IC=(--)100mA 100* 400*

Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)100mA 120 MHz

Output Capacitance Cob VCB=(--)10V, f=1MHz (13)8.5 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)400mA, IB=(--)40mA (--0.2)0.1 (--0.6)0.4 V

Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)400mA, IB=(--)40mA (--)0.85 (--)1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)120 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)100 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V

Turn-ON Time ton See specified Test Circuit. (80)80 ns

Storage T ime tstg See specified Test Circuit. (700)850 ns

Fall T ime tfSee specified Test Circuit. (40)50 ns

*: The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows:

Rank R S T

hFE 100 to 200 140 to 280 200 to 400

Package Dimensions Switching Time Test Circuit

unit : mm (typ)

7007B-004

INPUT

50V

50Ω

100μF 470μF

--5V

IC=10IB1=--10IB2=400mA

(For PNP, the polarity is reversed)

PW=20μs

D.C.≤1%

IB1

IB2

2SA1416 / 2SC3646

No.2005-3/5

IC -- VCE

IC -- VCE IC -- VCE

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- mA

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- mA

hFE -- IChFE -- IC

Collector Current, IC -- A

DC Current Gain, hFE

Collector Current, IC -- A

DC Current Gain, hFE

IC -- VBE IC -- VBE

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- A

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- A

ITR03526

0--2--1 --4--3 --5 214350

--0.2

--0.4

--0.6

--0.8

--1.0

--100

--300

--200

--400

--500

0.2

0.4

0.6

0.8

1.0

100

300

200

400

500

ITR03527

10 20 30 40 500

ITR03529

ITR03528

--15

--20mA

--30

--25

--10mA

--5

--3

--2mA

--1

IB=0mA

2SA1416 2SC3646

2SC3646

IB=0mA

2SA1416

25mA

1mA

--2.5mA

--2.0

--1.5

--1.0

--0.5

IB=0mA

0.5mA

2.5

2.0mA

1.5mA

1.0

ITR03533

ITR03532

ITR03530

57732

0.01

0.1 573232

1.0

0.4

0.2

0.6

0.8

1.2

1.0

0.4

0.2

0.6

0.8

1.2

1.0

100

1000

57732

0.01 0.1 573232

1.0

100

1000

0.6

0.8

0.4

0.2

1.0

1.2 0.6 0.8

00.40.2 1.0 1.2

ITR03531

2SA1416

VCE=--5V 2SC3646

VCE=5V

2SA1416

VCE=--5V 2SC3646

VCE=5V

--25

25°

Ta=75

--25°C

25°C

Ta=75

--25

25°

Ta=75

--25°C

25°C

Ta=75

°C

2SA1416 / 2SC3646

No.2005-4/5

fT -- ICCob -- VCB

Collector Current, IC -- A

Gain-Bandwidth Product, fT -- MHz

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

A S O PC -- Ta

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

Collector Dissipation, PC -- W

Ambient Temperature, T a

-- °C

VCE(sat) -- ICVCE(sat) -- IC

Collector Current, IC -- A

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

Collector Current, IC -- A

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

VBE(sat) -- ICVBE(sat) -- IC

Collector Current, IC -- A Collector Current, IC -- A

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

ITR03534

100

0.01

0.1

1.0

70.01 0.1

5732 1.0

5732

71.0

5322

100

0.2

0.5

0.4

0.6

0.8

1.6

1.3

1.4

1.2

1.0

71.0 10

57325732 100 2

0 20 80 1006040 160140120

ITR03535

ITR03540

Mounted on a ceramic board (250mm

✕0.8mm)

No heat sink

710

5327

100

ITR03541

2SA1416 / 2SC3646

f=1MHz

2SA1416

2SC3646

2SA1416

2SC3646

2SA1416 / 2SC3646

VCE=10V

10ms

100ms

DC operation

For PNP, minus sign is omitted

2SA1416 / 2SC3646

Single pulse Ta=25°C

Mounted on a ceramic board (250mm

✕0.8mm)

ICP=2A

IC=1A

ITR03539

ITR03538

0.01 5773 2 2

0.1 573

1.0

0.01

0.1

5773 2 2

1.0

5732

0.01 0.1

5773 2 2

1.0

573

1.0

0.01 5773 2 2

0.1 5731.0

1.0

1000

100

ITR03536

100

1000

ITR03537

2SC3646

IC / IB=10

2SA1416

IC / IB=10

2SA1416

IC / IB=10

75°C

25°C

Ta=--25

°C

--25°C

25°C

75°C

25°C

Ta=

2SC3646

IC / IB=10

Ta=75°C

--25°C

25°C

Ta=75°C

For PNP, minus sign is omitted For PNP, minus sign is omitted

2SA1416 / 2SC3646

No.2005-5/5

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