Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SD552
DESCRIPTION
·With TO-3 package
·Complement to type 2SB552
APPLICATIONS
·Power amplifier applications
·Power switching applications
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 220 V
VCEO Collector-emitter voltage Open base 180 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 15 A
IB Base current 4 A
PC Collector power dissipation TC=25℃ 150 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -55~200 ℃
JMnic
Product Specification www.jmnic.com
JMnic
Silicon NPN Power Transistors 2SD552
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO Collector-emitter breakdown voltage IC=25mA ;IB=0 180 V
VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 2.0 V
VBEsat Base-emitter saturation voltage IC=10A; IB=1A 2.5 V
ICBO Collector cut-off current VCB=220V; IE=0 0.1 mA
IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA
hFE DC current gain IC=5A ; VCE=5V 25 80
COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 160 pF
fT Transition frequency IC=1A ; VCE=10V 4 MHz
Product Specification www.jmnic.com
JMnic
Silicon NPN Power Transistors 2SD552
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
