The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999 INCH-POUND MIL-PRF-19500/547B 30 July 1999 SUPERSEDING MIL-S-19500/547A 20 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-205AD). 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. Type 2N6660 2N6661 PT 1/ PT TC = +25C TA = +25C VDS VDGR VGS 3/ ID1 2/ ID2 2/ TC = +25C TC = +100C IS IDM TJ and TSTG C -65 to +150 W mW V dc V dc V dc A dc A dc A dc A(pk) 6.25 725 725 60 90 60 90 20 20 0.99 0.86 0.62 0.54 -0.99 -0.86 3 3 6.25 1/ Derate linearly 0.05 W/C for TC > +25C 2/ Derate above TC = +25 C according to the formula ID = P( rated) K where P(rated) = 150 - (TC -25) (0.05) watts; K = max rDS(on) at TJ =+150C. 3/ RGS 1 M ohm. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/547B 1.4 Primary electrical characteristics at TC = +25C. Type Min V(BR)DSS VGS = 0 V ID = 10 A dc V dc 2N6660 2N6661 60 90 VGS(th)1 VDS VGS ID = 1.0 mA dc V dc Min Max 0.8 2.0 0.8 2.0 Max IDSS1 VGS = 0 V Max rDS(on) 1/ VGS = 10 V dc RJC Max VDS = 80 percent of rated VDS TJ = +25C at ID1 TJ = +150C at ID2 A dc Ohm Ohm C/W 1.0 1.0 3.0 4.0 6.33 8.44 20 20 1/ Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this specification takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500. 3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (TO-205AD) herein. 2 MIL-PRF-19500/547B FIGURE 1. Physical dimensions (TO-205AD). 3 MIL-PRF-19500/547B Ltr Dimensions Inches Notes Millimeters Min Max Min Max CD 0.305 0.335 7.75 8.51 CH 0.240 0.260 6.10 6.60 HD 0.335 0.370 8.51 9.40 TW 0.028 0.034 0.71 0.86 2 TL 0.029 0.045 0.74 1.14 3 LD 0.016 0.021 0.41 0.53 7,8 LL 0.500 0.750 12.70 19.05 7,8 LC LU 0.200 TP 0.016 L1 5.08 TP 0.019 0.41 0.050 6 0.48 7,8 1.27 7,8 L2 0.250 6.35 7,8 P 0.100 2.54 5 Q 0.050 1.27 4 R 0.010 0.25 9 45 TP 45 TP 6 NOTES: 1. Dimensions are in inches. Metric equivalents are given for general information only. 2. Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011 (0.028 mm). 3. Dimension TL measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane 0.054 + 0.001, - 0.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. FIGURE 1. Physical dimensions(TO-205AD) Continued. 4 MIL-PRF-19500/547B 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.3.2 Internal construction. Multiple chip construction shall not be permitted. 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. The following handling practices shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturer's list before contract award (see 4.2 and 6.3 ). 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500. 4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and herein. 5 MIL-PRF-19500/547B 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3 Test condition G. Test condition G. 1/ Method 3161 (see 4.5.3) Method 3161 (see 4.5.3) 9 IGSS1, IDSS1, gate stress test (see 4.5.5), subgroup 2 of table I herein Gate stress test (see 4.5.5), subgroup 2 of table I herein 10 Method 1042, test condition B Method 1042, test condition B 11 Subgroup 2 of table I herein; IGSS1, IDSS1, rDS(on)1, VGS(th)1, IGSS1 = 10 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 1 A dc or 100 percent of initial value, whichever is greater. Subgroup 2 of table I herein. IGSS1, IDSS1, rDS(on)1, VGS(th)1 12 Method 1042, test condition A and test condition C. (see 4.3.1) Method 1042, test condition A, (see 4.3.1) 13 Subgroups 2 and 3 of table I herein; IGSS1 = 10 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 1 A dc or 100 percent of initial value, whichever is greater. rDS(on)1 = 20 percent of initial value or 0.5 ohm, whichever is greater. VGS(th)1 = 4 10 percent of initial value or 0.3 V dc. Subgroup 2 of table I herein; IGSS1 = 10 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 1 A dc or 100 percent of initial value, whichever is greater. rDS(on)1 = 20 percent of initial value or 0.5 ohm, whichever is greater. VGS(th)1 = 10 percent of initial value or 0.3 V dc. 1/ Shall be performed anytime before screen 9. 4.3.1 Power burn-in. Power burn-in conditions are as follows: MIL-STD-750, method 3161, condition C, TA = +25C, -5C, +10C, VDS = 10 V min.; ID adjusted to meet a junction temperature of 140C, - 0C, + 10C, t = 240 hours. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for quality conformance inspection in accordance with figure 4 of MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 6 MIL-PRF-19500/547B 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. See 4.4.2.2 herein and table VIb of MIL-PRF-19500 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) requirements shall be in accordance with group A, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions 3 1051 Test condition G. 4 1042 Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum. VDS = 10 V dc, PT = See 1.4 at TA = +25C 3C. 5 1042 Accelerated steady-state operation life; test condition C; TA = + 25C, - 5C, + 10C, VDS = 10 V min.; ID adjusted to meet a junction temperature of 140C, - 0C, + 10C, t = 240 hours. 5 2037 Bond strength (Al-Au die interconnects only); test condition A. 6 3161 See 4.5.2. 4.4.2.2 Group B inspection, table IVb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition 2 1051 Test condition G, 25 cycles. 3 1027 TJ = PT (RJA) + PT = VDS ID; VDS = 15 V dc; ID 0.05 A dc; RJA = 170C/W; TA = 30 C 5C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition 2 2036 Test condition E . 6 1026 TJ = PT (RJA) + PT = VDS ID; VDS TA = 30 C 5C. 7 = 15 V dc; ID 0.05 A dc; RJA = 170C/W; MIL-PRF-19500/547B 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IX of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. A separate sample may be pulled for each test. Subgroup Method Condition Sampling plan E1 1051 Test condition G, 500 cycles Electrical measurements See table I, subgroup 2. 45 devices, c = 0 E2 1042 Test condition A, 1,000 hours. Electrical measurements See table I, subgroup 2. 45 devices, c = 0 E2 1042 Test condition B, 1,000 hours. Electrical measurements See table I, subgroup 2. 45 devices, c = 0 E3 E4 E5 Not applicable 3161 RJC see 1.4 herein. 5 devices, c = 0 Not applicable 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal impedance. Thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD 750. RJC (max) = 20 C/W. IM measuring current .......................................................10 mA. IM drain heating current.....................................................0.41 A. tH heating time ..................................................................Steady state (see MIL-STD-750, method 3161 for definition). VH drain-source heating voltage.......................................10 V. tMD measurement time delay............................................10 to 80 s. tSW sample window time .................................................10 s (max). 4.5.3 Thermal response (VSD measurements). The VSD measurements shall be performed in accordance with MIL-STD-750, method 3161. The VSD conditions (IH and VH) and maximum limit shall be derived by each vendor from the thermal response curves and shall be specified in the certificate of conformance prior to qualification. The following parameter measurements shall apply. IM measuring current .......................................................10 mA. IM drain heating current.....................................................0.41 A. TH heating time .................................................................Steady state (see MIL-STD-750, method 3161 for definition). VH drain-source heating voltage.......................................10 V. tMD measurement time delay............................................10 to 80 s. tSW sample window time .................................................10 s (max). 8 MIL-PRF-19500/547B 4.5.4 Unclamped inductive switching. a. Peak current (ID) (see 1.4 herein). b. Peak gate voltage (VGS) ............................................................10 V. c. Gate to source resistor (RGS) ...................................................25 RGS 200. d. Initial case temperature (TC) .....................................................+25C, +10C, -5C. e. Inductance (L).............................................................................100 H 10 percent. f. Number of pulses to be applied ..................................................1 pulse minimum. g. Pulse repetition rate ....................................................................None. 4.5.5 Gate stress test. VGS = 30 V minimum. t = 250 s minimum. 9 MIL-PRF-19500/547B TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical Inspection 2071 Subgroup 2 Breakdown voltage, drain to Source 3407 Bias condition C, VGS = 0 V; ID = 1.0 A dc V(BR)DSS 2N6660 2N6661 60 90 Gate to source voltage (threshold) 3403 VDS > VGS; ID = -1.0 mA dc VGS(th)1 Gate current 3411 Bias condition C; VDS = 0 V; VGS = +20 and -20 V dc IGSS1 100 nA dc Drain current 3413 VGS = 0; bias condition C; VDS = 80 percent of rated VDS (see 1.3) IDSS1 1.0 A dc Drain to source on-state voltage 3405 VGS = 10 V dc; condition A; pulsed (see 4.5.1), ID = -1.0 A dc VDS(on)1 VGS = 5 V dc; condition A; pulsed (see 4.5.1), ID = 0.3 A dc VDS(on)2 VGS = 10 V dc; condition A; pulsed (see 4.5.1); ID = 1.0 A dc rDS(on)1 2N6660 2N6661 Drain to source on-state voltage 3405 2N6660 2N6661 Static drain to source on-state resistance 3421 0.8 3.0 4.0 V 1.5 1.6 ohms 3.0 4.0 3421 VGS = 5 V dc; condition A; pulsed (see 4.5.1); ID = 10.3 A dc rDS(on)2 ohms 2N6660 2N6661 Forward voltage (source drain diode) 2N6660 2N6661 V dc V 2N6660 2N6661 Static drain to source on-state resistance 2.0 5.0 5.3 4011 Pulsed (see 4.5.1); VGS = 0 V VSD V (pk) 0.7 0.7 IS = 0.99 A dc IS = 0.86 A dc See footnotes at end of table. 10 1.6 1.4 MIL-PRF-19500/547B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions 3475 Pulsed (see 4.5.1), VDS = VGS = 7.5 V dc Symbol Limits Min Unit Max Subgroup 2 continued Forward transconductance gFS 170 ms ID1 = 525 m A dc ID2 = 475 m A dc 2N6660 2N6661 Subgroup 3 High temperature operation: TC = +125C Gate current 3411 Bias condition C, VDS = 0 V; VGS = +20 V dc and -20 V dc IGSS2 500 nA dc Drain current 3413 Bias condition C, VGS = 0 V, VDS = -80 percent of rated VDS (see 1.3) IDSS2 100 A dc Drain to source on-state voltage 3405 VGS = 10 V dc; condition A; pulsed (see 4.5.1), ID = 1 A dc VDS(on)3 VGS = 10 V dc; condition A; pulsed (see 4.5.1); ID = 1.0 A dc rDS(on)3 2N6660 2N6661 Static drain to source on-state resistance 3421 V 5.6 7.5 ohms 2N6660 2N6661 5.6 7.5 Gate to source voltage(threshold) 3403 Low temperature operation: Gate to source voltage (threshold) VDS > VGS, ID = -1.0 mA dc VGS(th)2 0.3 V dc TC = -55C 3403 VDS > VGS; ID = 1.0 mA 3472 Rgen = 50 ; RGS = 50 , VGS(th)3 2.5 V dc Subgroup 4 Switching time test Turn-on delay time VDD = 25 V dc; ID 1 A dc td(on) 10 ns Turn-off delay time VDD = 25 V dc; ID 1 A dc td(off) 10 ns See footnotes at end of table. 11 MIL-PRF-19500/547B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 4 - Continued. Small signal common source short-circuit input capacitance 3431 Small signal common source short-circuit output capacitance Small signal common source short-circuit reverse transfer capacitance 3433 Ciss 50 pF VDS = 25 V dc; VGS; = 0V; f = 1 MHz, Coss 40 pF VDS = 25 V dc; VGS; = 0 V; f = 1 MHz Crss 10 pF VDS = 25 V dc; VGS; = 0 V; f = 1 MHz Subgroup 5 Safe operating area See figure 2 High voltage test VDS = 80 percent of rated V DS (see 1.3) Electrical measurements See table I, subgroup 2. Subgroups 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 12 MIL-PRF-19500/547B TABLE II. Group B, C and E delta measurements. 1/ 2/ 3/ 4/ Step Inspection 5/ MIL-STD-750 Symbol Limit Min Method Unit Max Conditions 1. Gate current 3411 Bias condition C; VDS = 0 V VGS = +15 V dc and -15 V dc IGSS 10 nA dc or 100 percent of initial value, whichever is greater. 2. Drain cutoff current 3413 Bias condition C; VGS = +15 V dc and -15 V dc VDS = 60 V for 2N6660 IDSS 1 A dc or 100 percent of initial value, whichever is greater. VDS = 90 V for 2N6661 3. Small signal, drain to source on-state resistance 3423 VGS = 10 V dc; condition A, pulsed (see 4.5.1); ID = 1.0 A dc f = kHz rDS(on) 0.5 ohm or 20 percent of initial value , whichever is greater. 4. Gate to source voltage (threshold) 3403 VDS = VGS ; ID = 1.0 mA dc VGS(th) 10 percent of initial value or 0.3 V dc, whichever is greater. 5. Thermal resistance 3161 See 4.5.2 RJC 1/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table II herein, step 1. b. Subgroup 4, see table II herein, step 5. 2/ The delta measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table II herein, step 5. 3/ The delta measurements for table VII of MIL-PRF-19500 are as follows: a. Subgroup 6, see table II herein, step 5. 4/ The delta measurements for table IX of MIL-PRF-19500 are as follows: a. Subgroup 1, see table II herein, step 1. b. Subgroup 2, see table II herein, step 1. 5/ See MIL-PRF-19500 for sampling plan. 13 20 C/W MIL-PRF-19500/547B FIGURE 2. Maximum safe operating area. 14 MIL-PRF-19500/547B FIGURE 2. Maximum safe operating area continued. 15 MIL-PRF-19500/547B 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Issue of DODISS to be cited in the solicitation (see 2.2.1). b. The lead finish as specified (see 3.3.1). c. Type designation and quality assurance level. d. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. 6.4 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961- 2080) Review activities: Navy - TD Air Force - 13, 19, 99 16 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/547B 2. DOCUMENT DATE (YYMMDD) 990730 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV AND JANS 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED (YYMMDD) 8. PREPARING ACTIVITY a. Point of contact: Alan Barone, c. ADDRESS : Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL alan_barone@dscc.dla.mil IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-68880 Previous editions are obsolete WHS/DIOR, Feb 99