TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): O 5 * Peak wavelength: p = 940 nm * High reliability * High radiant power * High radiant intensity * Angle of half intensity: = 17 94 8389 * Low forward voltage * Suitable for high pulse current operation * Good spectral matching with Si photodetectors * Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. and in * Halogen-free according to IEC 61249-2-21 definition APPLICATIONS * Infrared remote control units with high power requirements * Free air transmission systems * Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) 60 17 940 800 TSAL6200 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-13/4 TSAL6200 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 s IFM Surge forward current tp = 100 s IFSM 1.5 A PV 160 mW Power dissipation Junction temperature Operating temperature range Thermal resistance junction/ambient 100 C - 40 to + 85 C Tstg - 40 to + 100 C t 5 s, 2 mm from case Tsd 260 C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Storage temperature range Soldering temperature Tj Tamb Note Tamb = 25 C, unless otherwise specified Document Number: 81010 Rev. 2.2, 22-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 100 0 21212 Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Temperature coefficient of VF Reverse current Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of e MIN. TYP. MAX. UNIT VF 1.35 1.6 V VF 2.6 3 V IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 40 60 340 mV/K 10 A 200 mW/sr 25 pF IF = 1 A, tp = 100 s Ie 500 mW/sr IF = 100 mA, tp = 20 ms e 35 mW IF = 20 mA TKe - 0.6 %/K 17 deg nm Angle of half intensity Peak wavelength IF = 100 mA p 940 Spectral bandwidth IF = 100 mA 50 nm Temperature coefficient of p IF = 100 mA TKp 0.2 nm/K Rise time IF = 100 mA tr 800 ns Fall time IF = 100 mA tf 800 ns Method: 63 % encircled energy d 2.4 mm Virtual source diameter Note Tamb = 25 C, unless otherwise specified www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81010 Rev. 2.2, 22-Jun-09 TSAL6200 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 1000 e - Radiant Power (mW) I F - Forward Current (A) 10 1 I FSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 -2 10 96 11987 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 1 0.1 10 0 10 2 13602 1.6 103 1.2 Ie rel; e rel 104 102 tP = 100 s tP/T = 0.001 IF = 20 mA 0.8 0 - 10 0 10 100 1 0 2 3 4 VF - Forward Voltage (V) 13600 50 100 140 T amb - Ambient Temperature (C) 94 7993 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 1.25 e rel - Relative Radiant Power I e - Radiant Intensity (mW/sr) 10 4 0.4 101 100 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 0 10 0 13601 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Fig. 3 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 100 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81010 Rev. 2.2, 22-Jun-09 890 10 4 14291 940 990 - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 0 10 20 - Angular Displacement I e rel - Relative Radiant Intensity 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.6 0.4 0.2 0 14329 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) < 0.7 8.7 0.3 7.7 (3.5) 0.15 O 5.8 0.15 A 34.3 0.55 Area not plane O 5 0.15 + 0.2 - 0.1 1 min. 0.6 0.5 0.5 + 0.15 - 0.05 technical drawings according to DIN specifications + 0.15 - 0.05 2.54 nom. Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81010 Rev. 2.2, 22-Jun-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1