DATA SH EET
Product specification 1999 Aug 24
DISCRETE SEMICONDUCTORS
BC856S
PNP general purpose double
transistor
a
ndbook, halfpage
MBD128
1999 Aug 24 2
Philips Semiconductors Product specification
PNP general purpose double transistor BC856S
FEATURES
•Two transistors in one package
•Reduces number of components and board space
•No mutual interference between the transistors.
APPLICATIONS
•General purpose switching and small signal
amplification.
DESCRIPTION
PNP double transistor in an SC-88 (SOT363) plastic six
lead package.
PINNING
MARKING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
TYPE NUMBER MARKING CODE
BC856S 5Ft
handbook, halfpage
132
4
56
Top view
MAM339
132
TR1 TR2
64
5
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
VCBO collector-base voltage open emitter −−80 V
VCEO collector-emitter voltage open base −−65 V
VEBO emitter-base voltage open collector −−5V
I
Ccollector current (DC) −−100 mA
Ptot total power dissipation Tamb ≤25 °C−200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤25 °C; note 1 −300 mW
1999 Aug 24 3
Philips Semiconductors Product specification
PNP general purpose double transistor BC856S
THERMAL CHARACTERISTICS
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp≤300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
ICBO collector cut-off current IE= 0; VCB =−30 V −−−15 nA
IE= 0; VCB =−30 V; Tj= 150 °C−−−5µA
I
EBO emitter cut-off current IC= 0; VEB =−5V −−−100 nA
hFE DC current gain IC=−2 mA; VCE =−5 V 110 −−
V
CEsat collector-emitter saturation
voltage IC=−10 mA; IB=−0.5 mA −−−100 mV
IC=−100 mA; IB=−5 mA; note 1 −−−300 mV
VBEsat base-emitter saturation
voltage IC=−10 mA; IB=−0.5 mA −700 −mV
Cccollector capacitance IE=i
e= 0; VCB =−10 V; f = 1 MHz −−2.5 pF
fTtransition frequency IC=−10 mA; VCE =−5V;
f = 100 MHz 100 −−MHz
1999 Aug 24 4
Philips Semiconductors Product specification
PNP general purpose double transistor BC856S
handbook, halfpage
104
103
102
10
MCD763
10−11
VCEsat
(mV)
IC (mA)
10 102103
(1)
(3) (2)
Fig.2 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =−55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MCD764
10−210−1
VBE
(mV)
1IC (mA)
(3)
10 102103
(2)
(1)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
VCE =5V.
(1) Tamb =−55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
Fig.4 DC current gain as a function of collector current; typical values.
handbook, full pagewidth
0
500
100
200
300
400
MCD765
10−210−1
hFE
IC (mA)
11010
2103
(3)
(2)
(1)
(2) Tamb =25°C.
(3) Tamb =−55 °C.
VCE =5V.
(1) Tamb = 150 °C.
1999 Aug 24 5
Philips Semiconductors Product specification
PNP general purpose double transistor BC856S
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wBM
b
p
D
e
1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe
1H
E
L
p
Qywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
1999 Aug 24 6
Philips Semiconductors Product specification
PNP general purpose double transistor BC856S
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Aug 24 7
Philips Semiconductors Product specification
PNP general purpose double transistor BC856S
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 67
Philips Semiconductors – a w orldwide compan y
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Printed in The Netherlands 115002/01/pp8 Date of release: 1999 Aug 24 Document order number: 9397 750 06099
