UNNJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de- veloping an extensive fine of negative resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor trigger, and each offers a special advantage for a particular trigger function. In addition, each can be used for various non-trigger applications. The featuresboth in design and characteristicswhich you receive with these products are concisely defined for each series: TYPES CONVENTIONAL UNIJUNCTIONS 2N489-494proved reliability; MIL spec version. 2N2646-47low cost, proved hermetic sealed device. PROGRAMMABLE UNIJUNCTION TRANSISTOR (PUT)variable threshold, low cost, fast switching speed, and circuit adjustable electrical characteristics. COMPLEMENTARY UNIJUNCTION TRANSISTORu!timate in temperature stability for timing and oscillator applications. SILICON UNILATERAL SWITCH (SUS)-a stable fixed low voltage threshold, low cost, high performance 4-layer diode. SILICON BILATERAL SWITCH (SBS)low voltage triac trigger, two silicon unilateral switches connected back to back. SILICON CONTROLLED SWITCH (SCS)high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression. APPLICATIONS Unijunctions . Device Triggers Conventional Complementary Programmable 2N489-94, 2N2646 DSK1 2N6027 sus SBS 2N1671, 2N2160 2N2647 DSK2 2N6028 2N4983-90 2N4991-93 DC, Lo Cost F E E DC, Hi Perf. E DC, Volt Regulator F E E: E 1 E DC, Inverter DC, Hi AI/AT AC, @, Hi Perf. AC, , Hit AC, Lo RFI AC, , Lo Cost Trigger for SCRs nm >1 hr. F P F P F F P F P >1 min, Lo Cost F >1 min, Stable P <1 min, Lo Cost F <1 min, Stable P <10 P 10-25V E >25v P Stability F Cost F Adjust, Range E Military P Hi-Rel P F ajml al mi mim] ole] ol mae ain wlan] = F E F P F P E N N N F N N F F N N N Pp F E Economy rm E = Excellent, F Fair, P = Poor, N = Not Applicable With additional circuitry 2 Hermetic version 2N6116-18 123PROGRAMMABLE UNIJUNCTIONS (PUT D13T SERIES) The 2N6028 is specifically characterized for long interval timers and other applications requiring low leakage and low peak point current. The 2N6027 has been characterized for general use where the low peak point current of the 2N6028 is not essential. Applications: SCR Trigger Sensing Circuits @ Pulse & Timing Circuits Sweep Circuits Oscillators Outstanding Features of the PUT: Low Cost Programmable Low Leakage Current Programmable Rez Low Peak Point Current Programmable |, Low Forward Voltage Programmable |, Fast, High Energy Trigger Pulse Planar Passivated Structure Peak Gate to Anode Pk. Point Current Iv Anode Current Max. Valley Reverse 20 psec. Current Cc. @Re = Min. JEDEC . . . 1Meg. @ Re = 10k Min. . Types ) (uA) (uA) . Package | 2N6027 2NG028 COMPLEMENTARY UNIJUNCTIONS (D5K SERIES) The D5K offers the ultimate in unijunction stability and uniformity. Low frequency oscillators and timers can be built using the D5K with better than 1.0% accuracy over extended temperature ranges. The DSK has characteristics like those of a standard unijunction except the currents and voltages applied to it are of opposite polarity than those of the standard devices. te leo Vo Rto v Peak Point Emitter Peak Operating Frequency Interbase n Valley Emitter Reverse Pulse . Stability Resistance Intrinsic Current Current Current Voltage from 25C GE @ in, em Standoff Min. . Max. Min. T s5S to + 150C fo Type Ratio (mA) (nA) W) Package 125 PUVLULUAUAULAAASilicon Complementary I tat Unijunction Transistor COMPLEMENTARY UNIJUNCTION The General Electric D5K1 Complementary Unijunction Transistor is a silicon planar, monolithic integrated circuit. It has unijunction characteristics with superior stability, a much tighter intrinsic-standoff ratio distribution and lower saturation voltage. FEATURES y * Guaranteed stability of better than .6% from 15C to +65C and better than 1.0% from 55C to +150C e Low leakage current: less than 10nA Ability to temperature compensate and calibrate at room temperature 4 Up to 100 kHz operation we vol vel Vee WHAT IS A COMPLEMENTARY UNIJUNCTION TRANSISTOR? a e 1 82 The General Electric D5K is a silicon planar passivated semiconductor device with characteristics like those of a standard unijunction transistor except that Oeiscrion orem the currents and voltages applied to it are of opposite polarity. We have chosen to use this polarity so that standard NPN planar passivated transistor processing techniques can be used. This results in a unijunction having superior stability and better uniformity than any unijunction previously available. The much tighter spread of intrinsic-standoff ratio now available is a significant advantage. For most applications, the polarity is not important. WHAT CAN THE D5K DO? The General Electric D5K can be used in most applications now using standard type unijunctions. Its unique stability and uniform properties make it ideal for stable oscillators, timers, and frequency dividers. The key advantage of the D5K over conventional UJTs is its predictability over the specified temperature range. This allows an engineer to use design curves to select the correct Ruz compensating resistor instead of having to perform expensive temperature testing on individual devices. The D5K1 has been characterized especially for applications requiring the best possible stability over the extreme temperature range specified. For most applications, because of the tight Reno and spread, the D5K1 can be compensated in a given circuit with one resistor value by selecting the proper Ry from Figure 2. For even better stability, a designer only has to measure the Rgyo of a device at room temperature, determine the proper Ryso/Ruz ratio from Figure 3, and insert the correct Ryo. Using this method, oscillators and timers can be built offering 0.5% stability over most temperature ranges used. Frequency dividers can be built with larger countdown ratios and drastically lower capacitor sizes due to the stability and low charge to trigger value (Q,). Another product advantage, low base 1 to emitter voltage drop at high current, allows generation of high outputpulses with low base to base voltages. For further application information, refer to Application Note 90.72. 1400 t200 1s NQ Vea" 8 x Zz 1000 en aA z SPECIFICATION POINT 2 FIGURE 1 i FIGURE 2 5 > FIGURE 3 i. Zo Ve = s * VagelS VOLTS = ; = a00 3 A | = oor S i Be ne 212.5 VOLTS: 3 600 La a . TEST CIRCUIT 7 *cuuT ONLY SUBJECTED TO Won" 10 VOLTS TEMPERATURE CHANGE 400 2 < ALL RESISTORS (% OSCILLATION FREQUENCY KHZ 5 2 + 6 8 0 OSCILLATION FREQUENCY LH7 1061[ psk1 | 230 Max absolute maximum ratings: (25 C free air) ee grag as | See Voltage D5K1 wore ws vanammns ae ~ Interbase Voltage 30 Vv Staten east ome Hm Current (Note 2) sen * t | _ Average Emitter (Forward) 150 mA Peak Emitter (Forward) ( Note 1) 2 A tet Si cesoe Peak Reverse Emitter 15 mA eons stout om ox Po am Power pmensions Average Total (Note 2) 300 mW . Temperature ae he A J Operating 55to +150 C vars eo Se we Storage 55 to +200 C aoe ees electrical characteristics: (25 C free air) Min. Typ. Max. Intrinsic Standoff Ratio (Note 3) 7 0.58 0.60 0.62 Peak Point Voltage (Vez = 5V) Vp 3.2 3.45 3.7 Volts (Vpn = 10V) Vp 6.1 6.45 6.8 Volts Interbase Resistance (Ipn = 0.lmA) Rano 5.5 6.8 8.2 kohms Emitter Breakdown Voltage (Irn: = 10pA) Vento 8.0 9.5 Volts Peak Point Current (Vos = 10V) Ip 5 pA Valley Point Current (Vag = 10V) Iy 1 2 mA Emitter Reverse Current (Veni = 5V) Ignio 0.1 10 nA Emitter Saturation Voltage (Ig = 50mA, Vann = 10V) Vianceat) 11 1.5 Volts Modulated Interbase Current (Is = 50mA, Van = 10V) Tp2moa) 4 10 mA Peak Pulse Voltage (Note 4) Vor 3.5 4.5 Volts Diode Voltage Drop (Note 3) Vp .30 49 .60 Volts Minimum Charge to Trigger (Var = 10V) Q: 50 pc Turn-on Time (See Figure 7) ton 1 psec. Recovery Time (See Figure 7) tree 10 psec. Relaxation Oscillator Frequency Shift from 25C Value (See Figure 1, C = 0.1pF, Rao = 9500, Vs = 12.5V) 15C to + 65C 0.2 0.6 % 55C to + 150C 0.4 10 % Notes: 1. For capacitor discharge, resistor current limiting is required for capacitors greater than 5 F and recommended for all cases. (A minimum of 15 ohms is required for good temperature stability.) 2. Derate power and currents linearly to zero at maximum operating temperature. 3. The intrinsic-standoff ratio (y) is essentially constant with temperature and interbase voltage. It and the associated diode drop of peak point voltage are defined by the equations: Where: Vapi = 10V + .001V Vere = 4. The Base-One Peak Pulse Voltage is measured in the circuit shown in Figure 4. This specification is used to insure a minimum pulse amplitude for applications in SCR firing circuits and other _ Ver Vro 7 Vin Vane types of firing circuits. Vp = Veo n Vane 1062 5V + .001VEMITTER VOLTAGE Dun = GAT 1Ok rta 10h yao RESISTANCE !4- SATURATION~- t 2 REGIO| I EGION mis PEAK POINT | iy RELAY cnto FIGURE 4 sei , | EMITTER TO BASE- inaaoa VagtIOV | ONE D e sy} ser avers | CHARACTERISTI ay. THe tmicoen 1 NALLEY POINT ' rok toh 180 100 0.2 HF ow a 22 Min to | EMITTER oto vee } wd. |e FIGURE 5 | CURRENT Ty Oma TE FIGURE 6 FIGURE 7 Complementary Unijunction Tran- Static Emitter Characteristics curves sistor symbol with nomenclature showing important parameters and used for voltage and currents. measurement points (exaggerated to show details). TYPICAL CHARACTERISTICS wn 5 PEAK POINT CHARACTERISTICS 4 Oo 7.5 wha og STATIC EMITTER CHARACTERISTICS > 2 Rep VS TEMP / 5 Wag = /4V Ty2+25C w a / 3 BB HIS ; 2 a f 8 = 2 LZ Z a 7.4 we 3 o a 8 > 3S i aw w Wl c ui E J Eb - Zz i Re 7.3 3 1.0 YY w = nN 1Bg=0 WW a9 4 s 4 > $ WwW z o 2 4 6 8 0 12 4 t6 8 20 72 0 2 4 6 8 10 12 14 -40-20 0 20 40 60 80 100 [20 140 Ig-EMITTER CURRENT-mA Ta ~AMBIENT TEMP DEGREES CENTIGRADE Ie ~EMITTER CURRENT-pA Vag 10 VOLTS 14p--- a - seep wap ~ - -___7 wo DROP VS TEMPERATURE a a2 Pd. -+ oe oS > ~~ Q a ' | Pt 3 e a mm & us . A 8 5 = S $ 3 5 . toc an po 3a aa 2 @ 3 1 3 : |p} td ke s a if | L Ta AMBIENT TEMPERATURE - C 760-4020 oO 20 Ta AMBIENT TEMPERATURE C 100 =2 STATIC INTERBASE CHARACTERISTICS | LEAKAGE CURRENT vs 10 V TEMPERATURE io = = T,=0 | VALLEY CURRENT AND PEAK CURRENT / / 10 WS a 10 mA 4 VOLTAGE (Ty #25 C) - bE ot z g / / z oo wg w 20 x 10 30 w a w 5 26 3 < $ 40 10 a " uw 50 4 Qa z gz % 25 a = > 10 oy r 4 = < f / o oO ao [ry) > H con] 1 NOTE: 2 /| 1 DIODE OR RESISTIVE EMITTER PROTECTION REQUIRED BEYOND THIS VOLTAGE Z att Ol 2 3 4 -50 Q +50 +100 +150 +200 Ta-AMBI PERATURE ~ INTERSTATE VOLTAGE ~ VOLTS 1g, BASE TWO CURRENT -mA a ENT TEMPERATURE ~ C 1063[Bar] APPLICATIONS TYPICAL CIRCUITS Since the CUJT has opposite polarities from standard UJTs, its oscillator circuit Figure (b) isinverted. Figure (a) shows a positive, high energy pulse, while Figure (b) shows a negative. Circuit in Figure (c) results in positive pulses for SCR triggering. + (a) (b) (ce) STANDARD COMPLEMENTARY CuuT CIRCUIT CIRCUIT CIRCUIT FOR HIGH ENERGY TRIGGER PULSES 0.1 TO 90 SECOND TIMER Timer interval starts when power is applied to circuit, terminates when voltage is applied to load. 2N2646 is used in oscillator which pulses base 2 of D5K. This reduces effective I, of D5K and allows much larger timing resistor and smaller timing capacitor to be used than would otherwise be possible. n Sr OUTPUTS ? e e 33K2, GE BLACK HAWK T5F3R5A224 -22yuF CGE BLUE JAY AAIBAIO5C DECADE FREQUENCY DIVIDER In next stage, product of R2 and C2 should be 10 X that of preceding stage (+2%). R2 should be between 27kQ and 10 meg Q. C1 & C2.0047 pF (+1%) R1100k 2 (+1%) R21M 2 (+1%) R3R41k (may need to be adjusted for variation of Rp, of CUJT) OUTPUT (2.5KHz) OUTPUT e + (250 Hz) OluF Olpr f+ to DIVIDER IVI DSK STAGE kK 2.5 KHz *+-+10 FREQUENCY DIVIDER-| OSCILLATOR 50 kHz OSCILLATOR Higher frequency (stable) oscillators are now possible. Here are typical components for a 50 kHz circuit. This is possible because of the more nearly ideal characteristics of the D5K (over conventional UJTs). One application for higher frequency is TV horizontal oscil- lators. Note the low Ry. +V = lO VOLTS a7 a CUuT BI c G-E 270 D5K ptd. B2 R 100 Re2 KA 1000 1064