
LDS-0016-2, Rev. 1 (111616) ©2011 Microsemi Corporation Page 3 of 6
ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Emitter Breakdown Voltage 2N3506U4
IC = 10 mA 2N3507U4 V(BR)CEO 40
50 V
Collector-Emitter Cutoff Current
ICEX
1.0
µA
CE
CE
Collector-Base Breakdown Voltage
IC = 100 µA 2N3506U4
2N3507U4 V(BR)CBO
80 V
Emitter-Base Breakdown Voltage
IE = 10 µA V(BR)EBO 5 V
ON CHARACTERISTICS (3)
Parameters / Test Conditions
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1 V 2N3506U4
2N3507U4 hFE 50
35 250
175
Forward-Current Transfer Ratio
IC = 1.5 A, VCE = 2 V 2N3506U4
2N3507U4 hFE 40
30 200
150
Forward-Current Transfer Ratio
IC = 2.5 A, VCE = 3 V 2N3506U4
2N3507U4 hFE 30
25
Forward-Current Transfer Ratio
IC = 3.0 A, VCE = 5 V 2N3506U4
2N3507U4 hFE 25
20
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1.0 V @ -55 °C 2N3506U4
2N3507U4 hFE 25
17
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 2.0 V @ -55 °C 2N3506AU4
2N3507AU4 hFE 25
17
Collector-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA VCE(sat) 0.5 V
Collector-Emitter Saturation Voltage
IC = 1.5 A, IB = 150 mA VCE(sat) 1.0 V
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA VCE(sat) 1.5 V
Base-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA VBE(sat) 1.0 V
Base-Emitter Saturation Voltage
IC = 1.5 A, IB = 150 mA VBE(sat) 0.8 1.3 V
Base-Emitter Saturati on Voltage
IC = 2.5 A, IB = 250 mA VBE(sat) 2.0 V