FQT4N25TF - Fairchild Semiconductor

May 2001

FQT4N25

QFETTM

FQT4N25

250V N-Ch annel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supply.

Features

• 0.83A, 250V, RDS(on) = 1.75Ω @VGS = 10 V

• Low gate charge ( typical 4.3 nC)

• Low Crss ( typical 4.8 pF)

• Fast switching

• Improved dv/dt capability

SOT-223

FQT Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQT4N25 Units

VDSS Drain-Source Voltage 250 V

IDDrain Current - Continuous (TC = 25°C) 0.83 A

- Continuous (TC = 70°C) 0.66 A

IDM Drain Current - Pulsed (Note 1) 3.3 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 52 mJ

IAR Avalanche Current (Note 1) 0.83 A

EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns

PDPower Dissipation (TC = 25°C) 2.5 W

- Derate above 25°C 0.02 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, May 2001

FQT4N25

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 120mH, IAS = 0.83A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ° C

3. ISD ≤3.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit i ons Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA250 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.22 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 1 µA

VDS = 200 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 0.415 A -- 1.38 1.75 Ω

gFS Forward Transconductance VDS = 50 V, ID = 0.415 A -- 1.28 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 155 200 pF

Coss Output Capacitance -- 35 45 pF

Crss Reverse Transfer Capacitance -- 4.8 6. 5 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 125 V, ID = 3.6 A,

RG = 25 Ω

-- 6.8 25 ns

trTurn-On Rise Time -- 45 100 ns

td(off) Turn-Off D e l a y Time -- 6.4 25 ns

tfTurn -Off Fa ll Time -- 22 55 ns

QgTotal Gate Ch arge VDS = 200 V, ID = 3.6 A,

VGS = 10 V

-- 4.3 5.6 nC

Qgs Gate-Source Charge -- 1.3 -- nC

Qgd Gate-Drain Charge -- 2.1 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 0.83 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 3.3 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 0.83 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, I S = 3.6 A,

dIF / dt = 100 A/µs

-- 110 -- ns

Qrr Reverse Recovery Charge -- 0.35 -- µC

FQT4N25

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

25!

150!

N o te s :

1 . V GS = 0V

2. 250#s Puls e Te st

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

246810

10-1

100

" No te s :

1. V DS = 50V

2. 250#s Pulse Test

-55!

150!

25!

ID , D r ain C u rre n t [A ]

VGS , Ga te-Source Voltage [V]

012345

VDS = 125V

VDS = 50V

VDS = 200V

" Note : ID = 3.6 A

VGS, Gate-Source Voltage [V]

QG, T otal G a t e Cha rg e [n C]

10-1 100101

100

150

200

250

300

350 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

N o te s :

1 . V GS = 0 V

2 . f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

02468

VGS = 20V

VGS = 10V

" Note : TJ = 25!

RDS(ON) [$],

Drain-Source On-Resistance

ID, Dr a in Cu r ren t [A]

10-1 100101

10-1

100

V GS

Top : 1 5 .0 V

1 0 .0 V

8 .0 V

7 .0 V

6 .5 V

6 .0 V

Botto m : 5.5 V

" N o te s :

1. 250#s Pulse T e st

2. TC = 25!

ID, D r ain C u rr e nt [A]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitanc e Ch aracterist i cs Figure 6. Ga te Ch arge Cha ra ct eri stics

Figu re 3. On-Resi stance Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ic s

FQT4N25

10-5 10-4 10-3 10-2 10-1 100101102103

10-1

100

101" Notes :

1. Z %JC(t) = 50 !/W M a x .

2 . Du ty F a c tor, D=t1/t2

3. T JM - TC = PDM * Z%JC(t)

s in g le p u ls e

D=0.5

0.02

0.2

0.05

0.1

0.01

Z%JC

(t), Therm al Response

t1, Square W ave Pulse Duration [sec]

25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

ID, D r ain Curre n t [A]

TC, Case Temperature [!

]

10-1 100101102

10-3

10-2

10-1

100

101

100 ms

10 ms

1 ms100 µs

Operation in Th is Area

is Limited by R DS(on)

" N o te s :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

" N o te s :

1. VGS = 10 V

2. ID = 0.415 A

RDS(ON) , (N o rmalize d )

Drain-Source On-Resistance

TJ, Junc tion Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

N o te s :

1 . V GS = 0 V

2 . ID = 250 #A

BV DSS , (No rma liz e d )

D rain-Source Breakdow n Voltage

TJ, Junction Tem perature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Breakdown Voltage Variati o n

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Res pons e Cur ve

PDM

FQT4N25

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resist iv e Sw itc h ing Test Circ ui t & Waveform s

Unclamped Inductive Switching Test Circuit & Waveforms

FQT4N25

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQT4N25

Package Dimensions

3.00 ±0.10

7.00 ±0.30

0.65 ±0.20

0.08MAX

3.50 ±0.20

1.60 ±0.20

(0.46)

(0.89)

(0.60) (0.60)

1.75 ±0.20

0.70 ±0.10

4.60 ±0.25

6.50 ±0.20

(0.95) (0.95)

2.30 TYP

0.25

MAX1.80

0°~10°

+0.10

–0.05

0.06 +0.04

–0.02

SOT-223

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intended to be an exhaustive list of all such trademarks.

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production T his datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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