LESHAN RADIO COMPANY, LTD. Dual Series BAS40-04LT1 Schottky Barrier Diode 3 These Schottky barrier diodes are designed for high speed switching applications, circuit 1 2 protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Min- CASE 318-08, STYLE 11 iature surface mount package is excellent for hand held and portable applications where * 40V SCHOTTKY BARRIER DIODES SOT-23 (TO-236AB) space is limited. ANODE 1 * Extremely Fast Switching Speed * Low Forward Voltage -- 0.50 Volts (Typ) CATHODE 2 3 CATHODE/ANODE @ IF = 10 mAdc MAXIMUM RATINGS (TJ = 150C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction and Storage Temperature Range Symbol Value Unit VR PF 40 Volts 225 1.8 mW mW/C -55 to +150 C TJ, Tstg ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Symbol Min Max Unit V(BR)R CT IR VF VF VF 40 -- -- -- -- -- -- 5.0 1.0 380 500 1.0 Volts pF Adc mVdc mVdc Vdc BAS40-04LT1-1/2 LESHAN RADIO COMPANY, LTD. BAS40-04LT1 100 IR, REVERSE CURRENT ( A) IF, FORWARD CURRENT (mA) 100 10 1.0 10 1.0 0.1 0.01 0.001 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5.0 10 15 20 25 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Typical Forward Current Figure 2. Reverse Current Versus Reverse Voltage 3.5 3.0 CT, CAPACITANCE (pF) 2.5 2.0 1.5 1.0 0.5 0 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Current BAS40-04LT1-2/2