M25PXX 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface DATA BRIEF FEATURES SUMMARY 512Kbit to 32Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (256 Kbit or 512Kbit) Bulk Erase (512Kbit to 32Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 40MHz to 50MHz Clock Rate (maximum) Deep Power-down Mode 1A (typical) Electronic Signatures - JEDEC Standard Two-Byte Signature (20xxh) - RES Instruction, One-Byte, Signature, for backward compatibility More than 100000 Erase/Program Cycles per Sector More than 20 Year Data Retention Figure 1. Packages VDFPN8 (ME) 8x6mm (MLP8) VDFPN8 (MP) (MLP8) Table 1. Product List Reference Part Number M25P32 M25P16 M25P80 M25Pxx SO16 (MF) 300 mil width M25P40 M25P20 M25P10-A M25P05-A 8 1 SO8 (MN) 150 mil width October 2004 For further information contact your local ST sales office. 1/7 M25PXX SUMMARY DESCRIPTION Figure 3. SO8 and VDFPN Connections The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as a number of sectors, each containing 256 or 128 pages. Each page is 256 bytes wide. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction. M25Pxx S Q W VSS 1 2 3 4 8 7 6 5 VCC HOLD C D AI10259 Figure 2. Logic Diagram VCC D Q Note: 1. There is an exposed die paddle on the underside of the MLP8 package. This is pulled, internally, to V SS, and must not be allowed to be connected to any other voltage or signal line on the PCB. C S M25Pxx Figure 4. SO16 Connections W M25Pxx HOLD VSS AI10258 Table 2. Signal Names C Serial Clock D Serial Data Input Q Serial Data Output S Chip Select W Write Protect HOLD Hold VCC Supply Voltage VSS Ground HOLD VCC DU DU DU DU S Q 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 AI10260 2/7 Note: 1. DU = Don't Use C D DU DU DU DU VSS W M25PXX Figure 5. Block Diagram HOLD W High Voltage Generator Control Logic S C D I/O Shift Register Q Address Register and Counter Status Register 256 Byte Data Buffer Top of Address Space Y Decoder Size of the read-only memory area 00000h 000FFh 256 Bytes (Page Size) X Decoder AI10261 3/7 M25PXX Table 3. Instruction Set Instruction Description One-byte Instruction Code Dummy Bytes Data Bytes WREN Write Enable 0000 0110 06h 0 0 0 WRDI Write Disable 0000 0100 04h 0 0 0 RDID Read Identification 1001 1111 9Fh 0 0 1 to 3 RDSR Read Status Register 0000 0101 05h 0 0 1 to WRSR Write Status Register 0000 0001 01h 0 0 1 READ Read Data Bytes 0000 0011 03h 3 0 1 to 0000 1011 0Bh 3 1 1 to FAST_READ Read Data Bytes at Higher Speed PP Page Program 0000 0010 02h 3 0 1 to 256 SE Sector Erase 1101 1000 D8h 3 0 0 BE Bulk Erase 1100 0111 C7h 0 0 0 DP Deep Power-down 1011 1001 B9h 0 0 0 Release from Deep Power-down, and Read Electronic Signature 0 3 1010 1011 ABh 1 to 0 0 0 RES Release from Deep Power-down Table 4. Status Register Format b7 SRWD b0 0 0 BP2 BP1 BP0 WEL WIP Status Register Write Protect Block Protect Bits Write Enable Latch Bit Write In Progress Bit 4/7 Address Bytes M25PXX PART NUMBERING Table 5. Ordering Information Scheme Example: M25P80 - V MP 6 T P Device Type M25P = Serial Flash Memory for Code Storage Device Function 32 = 32Mbit (4M x 8) 16 = 16Mbit (2M x 8) 80 = 8Mbit (1M x 8) 40 = 4Mbit (512K x 8) 20 = 2Mbit (256K x 8) 10-A = 1Mbit (128K x 8) 05-A = 512Kbit (64K x 8) Operating Voltage V = VCC = 2.7 to 3.6V Package ME = VDFPN8 8x6mm (MLP8) MP = VDFPN8 (MLP8) MF = SO16 (300 mil width) MN = SO8 (150 mil width) Device Grade 6 = Industrial temperature range, -40 to 85 C. Device tested with standard test flow 3 = Device tested with High Reliability Certified Flow1. Automotive temperature range (-40 to 125 C) Option blank = Standard Packing T = Tape and Reel Packing Plating Technology blank = Standard SnPb plating P = Lead-Free and RoHS compliant G = Lead-Free, RoHS compliant, Sb2O3-free and TBBA-free Note: 1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest ST Sales Office. 5/7 M25PXX REVISION HISTORY Table 6. Document Revision History Date Rev. 08-Oct-2004 1.0 6/7 Description of Revision First release M25PXX Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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