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LM2662, LM2663

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SNVS002D –JANUARY 1999–REVISED MAY 2013

LM2662/LM2663 Switched Capacitor Voltage Converter

Check for Samples: LM2662,LM2663

1FEATURES DESCRIPTION

The LM2662/LM2663 CMOS charge-pump voltage

2• Inverts or Doubles Input Supply Voltage converter inverts a positive voltage in the range of

• 8-Pin SOIC Package 1.5V to 5.5V to the corresponding negative voltage.

• 3.5ΩTypical Output Resistance The LM2662/LM2663 uses two low cost capacitors to

provide 200 mA of output current without the cost,

• 86% Typical Conversion Efficiency at 200 mA size, and EMI related to inductor based converters.

• (LM2662) Selectable Oscillator Frequency: 20 With an operating current of only 300 μA and

kHz/150 kHz operating efficiency greater than 90% at most loads,

• (LM2663) Low Current Shutdown Mode the LM2662/LM2663 provides ideal performance for

battery powered systems. The LM2662/LM2663 may

also be used as a positive voltage doubler.

APPLICATIONS

• Laptop computers The oscillator frequency can be lowered by adding an

external capacitor to the OSC pin. Also, the OSC pin

• Cellular phones may be used to drive the LM2662/LM2663 with an

• Medical instruments external clock. For LM2662, a frequency control (FC)

• Operational amplifier power supplies pin selects the oscillator frequency of 20 kHz or 150

kHz. For LM2663, an external shutdown (SD) pin

• Interface power supplies replaces the FC pin. The SD pin can be used to

• Handheld instruments disable the device and reduce the quiescent current

to 10 μA. The oscillator frequency for LM2663 is 150

kHz.

Basic Application Circuits

Voltage Inverter Positive Voltage Doubler

Splitting VIN in Half

1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

LM2662, LM2663

SNVS002D –JANUARY 1999–REVISED MAY 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings(1)(2)

Supply Voltage (V+ to GND, or GND to OUT) 6V

LV (OUT −0.3V) to (GND + 3V)

FC, OSC, SD The least negative of (OUT −0.3V)

or (V+ −6V) to (V+ + 0.3V)

V+ and OUT Continuous Output Current 250 mA

Output Short-Circuit Duration to GND(3) 1 sec.

Power Dissipation (TA= 25°C)(4) 735 mW

TJMax(4) 150°C

θJA(4) 170°C/W

Operating Ambient Temperature

Range −40°C to +85°C

Operating Junction Temperature

Range −40°C to +105°C

Storage Temperature Range −65°C to +150°C

Lead Temperature (Soldering, 10 seconds) 300°C

ESD Rating 2 kV

(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when

operating the device beyond its rated operating conditions.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be

avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.

(4) The maximum allowable power dissipation is calculated by using PDMax = (TJMax −TA)/θJA, where TJMax is the maximum junction

temperature, TAis the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package.

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SNVS002D –JANUARY 1999–REVISED MAY 2013

Electrical Characteristics

Limits in standard typeface are for TJ= 25°C, and limits in boldface type apply over the full Operating Junction Temperature

Range. Unless otherwise specified: V+ = 5V, FC = Open, C1= C2= 47 μF.(1)

Symbol Parameter Condition Min Typ Max Units

V+ Supply Voltage RL= 1k Inverter, LV = Open 3.5 5.5

Inverter, LV = GND 1.5 5.5 V

Doubler, LV = OUT 2.5 5.5

IQSupply Current No Load FC = V+ (LM2662) 1.3 4

LV = Open SD = Ground (LM2663) mA

FC = Open 0.3 0.8

ISD Shutdown Supply Current (LM2663) 10 μA

VSD Shutdown Pin Input Voltage (LM2663) Shutdown Mode 2.0 (2) V

Normal Operation 0.3

ILOutput Current 200 mA

ROUT Output Resistance(3) IL= 200 mA 3.5 7Ω

fOSC Oscillator Frequency(4) OSC = Open FC = Open 720 kHz

FC = V+ 55 150

fSW Switching Frequency(5) OSC = Open FC = Open 3.5 10 kHz

FC = V+ 27.5 75

IOSC OSC Input Current FC = Open ±2 μA

FC = V+ ±10

PEFF Power Efficiency RL(500) between V+and OUT 90 96 %

IL= 200 mA to GND 86

VOEFF Voltage Conversion Efficiency No Load 99 99.96 %

(1) In the test circuit, capacitors C1and C2are 47 μF, 0.2Ωmaximum ESR capacitors. Capacitors with higher ESR will increase output

resistance, reduce output voltage and efficiency.

(2) In doubling mode, when Vout > 5V, minimum input high for shutdown equals Vout −3V.

(3) Specified output resistance includes internal switch resistance and capacitor ESR.

(4) For LM2663, the oscillator frequency is 150 kHz.

(5) The output switches operate at one half of the oscillator frequency, fOSC = 2fSW.

Test Circuits

Figure 1. LM2662 and LM2663 Test Circuits

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Typical Performance Characteristics

(Circuit of Figure 1)

Supply Current vs Supply Current vs

Supply Voltage Oscillator Frequency

Figure 2. Figure 3.

Output Source Resistance Output Source Resistance

vs vs

Supply Voltage Temperature

Figure 4. Figure 5.

Output Source Resistance Efficiency

vs vs

Temperature Load Current

Figure 6. Figure 7.

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SNVS002D –JANUARY 1999–REVISED MAY 2013

Typical Performance Characteristics (continued)

(Circuit of Figure 1)Output Voltage Drop Efficiency

vs vs

Load Current Oscillator Frequency

Figure 8. Figure 9.

Output Voltage Oscillator Frequency

vs vs

Oscillator Frequency External Capacitance

Figure 10. Figure 11.

Oscillator Frequency Oscillator Frequency

vs vs

Supply Voltage Supply Voltage

Figure 12. Figure 13.

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Typical Performance Characteristics (continued)

(Circuit of Figure 1)Oscillator Frequency Oscillator Frequency

vs vs

Temperatur Temperature

Figure 14. Figure 15.

Shutdown Supply Current

Temperature (LM2663 Only)

Figure 16.

CONNECTION DIAGRAMS

8-Pin SOIC Package

Figure 17. D Package Top View

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SNVS002D –JANUARY 1999–REVISED MAY 2013

Pin Descriptions

Pin Name Function

Voltage Inverter Voltage Doubler

1 FC Frequency control for internal oscillator: Same as inverter.

(LM2662) FC = open, fOSC = 20 kHz (typ);

FC = V+, fOSC = 150 kHz (typ);

FC has no effect when OSC pin is driven externally.

1 SD Shutdown control pin, tie this pin to the ground in normal Same as inverter.

(LM2663) operation.

2 CAP+ Connect this pin to the positive terminal of charge-pump Same as inverter.

capacitor.

3 GND Power supply ground input. Power supply positive voltage input.

4 CAP−Connect this pin to the negative terminal of charge-pump Same as inverter.

capacitor.

5 OUT Negative voltage output. Power supply ground input.

6 LV Low-voltage operation input. Tie LV to GND when input LV must be tied to OUT.

voltage is less than 3.5V. Above 3.5V, LV can be

connected to GND or left open. When driving OSC with

an external clock, LV must be connected to GND.

7 OSC Oscillator control input. OSC is connected to an internal Same as inverter except that OSC cannot be driven by

15 pF capacitor. An external capacitor can be connected an external clock.

to slow the oscillator. Also, an external clock can be used

to drive OSC.

8 V+ Power supply positive voltage input. Positive voltage output.

Circuit Description

The LM2662/LM2663 contains four large CMOS switches which are switched in a sequence to invert the input

supply voltage. Energy transfer and storage are provided by external capacitors. Figure 18 illustrates the voltage

conversion scheme. When S1and S3are closed, C1charges to the supply voltage V+. During this time interval

switches S2and S4are open. In the second time interval, S1and S3are open and S2and S4are closed, C1is

charging C2. After a number of cycles, the voltage across C2will be pumped to V+. Since the anode of C2is

connected to ground, the output at the cathode of C2equals −(V+) assuming no load on C2, no loss in the

switches, and no ESR in the capacitors. In reality, the charge transfer efficiency depends on the switching

frequency, the on-resistance of the switches, and the ESR of the capacitors.

Figure 18. Voltage Inverting Principle

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APPLICATION INFORMATION

SIMPLE NEGATIVE VOLTAGE CONVERTER

The main application of LM2662/LM2663 is to generate a negative supply voltage. The voltage inverter circuit

uses only two external capacitors as shown in the Basic Application Circuits. The range of the input supply

voltage is 1.5V to 5.5V. For a supply voltage less than 3.5V, the LV pin must be connected to ground to bypass

the internal regulator circuitry. This gives the best performance in low voltage applications. If the supply voltage is

greater than 3.5V, LV may be connected to ground or left open. The choice of leaving LV open simplifies the

direct substitution of the LM2662/LM2663 for the LMC7660 Switched Capacitor Voltage Converter.

The output characteristics of this circuit can be approximated by an ideal voltage source in series with a resistor.

The voltage source equals −(V+). The output resistance Rout is a function of the ON resistance of the internal

MOS switches, the oscillator frequency, and the capacitance and ESR of C1and C2. Since the switching current

charging and discharging C1is approximately twice as the output current, the effect of the ESR of the pumping

capacitor C1is multiplied by four in the output resistance. The output capacitor C2is charging and discharging at

a current approximately equal to the output current, therefore, its ESR only counts once in the output resistance.

A good approximation is:

(1)

where RSW is the sum of the ON resistance of the internal MOS switches shown in Figure 18.

High value, low ESR capacitors will reduce the output resistance. Instead of increasing the capacitance, the

oscillator frequency can be increased to reduce the 2/(fosc × C1) term. Once this term is trivial compared with RSW

and ESRs, further increasing in oscillator frequency and capacitance will become ineffective.

The peak-to-peak output voltage ripple is determined by the oscillator frequency, and the capacitance and ESR

of the output capacitor C2:

(2)

Again, using a low ESR capacitor will result in lower ripple.

POSITIVE VOLTAGE DOUBLER

The LM2662/LM2663 can operate as a positive voltage doubler (as shown in the Basic Application Circuits). The

doubling function is achieved by reversing some of the connections to the device. The input voltage is applied to

the GND pin with an allowable voltage from 2.5V to 5.5V. The V+ pin is used as the output. The LV pin and OUT

pin must be connected to ground. The OSC pin can not be driven by an external clock in this operation mode.

The unloaded output voltage is twice of the input voltage and is not reduced by the diode D1's forward drop.

The Schottky diode D1is only needed for start-up. The internal oscillator circuit uses the V+ pin and the LV pin

(connected to ground in the voltage doubler circuit) as its power rails. Voltage across V+ and LV must be larger

than 1.5V to insure the operation of the oscillator. During start-up, D1is used to charge up the voltage at V+ pin

to start the oscillator; also, it protects the device from turning-on its own parasitic diode and potentially latching-

up. Therefore, the Schottky diode D1should have enough current carrying capability to charge the output

capacitor at start-up, as well as a low forward voltage to prevent the internal parasitic diode from turning-on. A

Schottky diode like 1N5817 can be used for most applications. If the input voltage ramp is less than 10V/ms, a

smaller Schottky diode like MBR0520LT1 can be used to reduce the circuit size.

SPLIT V+ IN HALF

Another interesting application shown in the Basic Application Circuits is using the LM2662/LM2663 as a

precision voltage divider. Since the off-voltage across each switch equals VIN/2, the input voltage can be raised

to +11V.

CHANGING OSCILLATOR FREQUENCY

For the LM2662, the internal oscillator frequency can be selected using the Frequency Control (FC) pin. When

FC is open, the oscillator frequency is 20 kHz; when FC is connected to V+, the frequency increases to 150 kHz.

A higher oscillator frequency allows smaller capacitors to be used for equivalent output resistance and ripple, but

increases the typical supply current from 0.3 mA to 1.3 mA.

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The oscillator frequency can be lowered by adding an external capacitor between OSC and GND (See typical

performance characteristics). Also, in the inverter mode, an external clock that swings within 100 mV of V+ and

GND can be used to drive OSC. Any CMOS logic gate is suitable for driving OSC. LV must be grounded when

driving OSC. The maximum external clock frequency is limited to 150 kHz.

The switching frequency of the converter (also called the charge pump frequency) is half of the oscillator

frequency.

NOTE: OSC cannot be driven by an external clock in the voltage-doubling mode.

Table 1. LM2662 Oscillator Frequency Selection

FC OSC Oscillator

Open Open 20 kHz

V+ Open 150 kHz

Open or V+ External Capacitor See Typical Performance Characteristics

N/A External Clock (inverter mode only) External Clock Frequency

Table 2. LM2663 Oscillator Frequency Selection

OSC Oscillator

Open 150 kHz

External Capacitor See Typical Performance Characteristics

External Clock (inverter mode only) External Clock Frequency

SHUTDOWN MODE

For the LM2663, a shutdown (SD) pin is available to disable the device and reduce the quiescent current to 10

μA. Applying a voltage greater than 2V to the SD pin will bring the device into shutdown mode. While in normal

operating mode, the SD pin is connected to ground.

CAPACITOR SELECTION

As discussed in the Simple Negative Voltage Converter section, the output resistance and ripple voltage are

dependent on the capacitance and ESR values of the external capacitors. The output voltage drop is the load

current times the output resistance, and the power efficiency is

(3)

Where IQ(V+) is the quiescent power loss of the IC device, and IL2ROUT is the conversion loss associated with the

switch on-resistance, the two external capacitors and their ESRs.

Low ESR capacitors (Table 3) are recommended for both capacitors to maximize efficiency, reduce the output

voltage drop and voltage ripple. For convenience, C1and C2are usually chosen to be the same.

The output resistance varies with the oscillator frequency and the capacitors. In Figure 19, the output resistance

vs. oscillator frequency curves are drawn for four difference capacitor values. At very low frequency range,

capacitance plays the most important role in determining the output resistance. Once the frequency is increased

to some point (such as 100 kHz for the 47 μF capacitors), the output resistance is dominated by the ON

resistance of the internal switches and the ESRs of the external capacitors. A low value, smaller size capacitor

usually has a higher ESR compared with a bigger size capacitor of the same type. Ceramic capacitors can be

chosen for their lower ESR. As shown in Figure 19, in higher frequency range, the output resistance using the 10

μF ceramic capacitors is close to these using higher value tantalum capacitors.

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Figure 19. Output Source Resistance vs Oscillator Frequency

Table 3. Low ESR Capacitor Manufacturers

Manufacturer Phone Capacitor Type

Nichicon Corp. (708)-843-7500 PL, PF series, through-hole aluminum electrolytic

AVX Corp. (803)-448-9411 TPS series, surface-mount tantalum

Sprague (207)-324-4140 593D, 594D, 595D series, surface-mount tantalum

Sanyo (619)-661-6835 OS-CON series, through-hole aluminum electrolytic

Murata (800)-831-9172 Ceramic chip capacitors

Taiyo Yuden (800)-348-2496 Ceramic chip capacitors

Tokin (408)-432-8020 Ceramic chip capacitors

Other Applications

PARALLELING DEVICES

Any number of LM2662s (or LM2663s) can be paralleled to reduce the output resistance. Each device must have

its own pumping capacitor C1, while only one output capacitor Cout is needed as shown in Figure 20. The

composite output resistance is:

(4)

Figure 20. Lowering Output Resistance by Paralleling Devices

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CASCADING DEVICES

Cascading the LM2662s (or LM2663s) is an easy way to produce a greater negative voltage (as shown in

Figure 21). If n is the integer representing the number of devices cascaded, the unloaded output voltage Vout is

(−nVin). The effective output resistance is equal to the weighted sum of each individual device:

(5)

A three-stage cascade circuit shown in Figure 22 generates −3Vin, from Vin.

Cascading is also possible when devices are operating in doubling mode. In Figure 23, two devices are

cascaded to generate 3Vin.

An example of using the circuit in Figure 22 or Figure 23 is generating +15V or −15V from a +5V input.

Note that, the number of n is practically limited since the increasing of n significantly reduces the efficiency and

increases the output resistance and output voltage ripple.

Figure 21. Increasing Output Voltage by Cascading Devices

Figure 22. Generating −3Vin from +Vin

Figure 23. Generating +3Vin from +Vin

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REGULATING Vout

It is possible to regulate the output of the LM2662/LM2663 by use of a low dropout regulator (such as LP2986).

The whole converter is depicted in Figure 24. This converter can give a regulated output from −1.5V to −5.5V by

choosing the proper resistor ratio:

(6)

where, Vref = 1.23V

The error flag on pin 7 of the LP2986 goes low when the regulated output at pin 5 drops by about 5% below

nominal. The LP2986 can be shutdown by taking pin 8 low. The less than 1 μA quiescent current in the

shutdown mode is favorable for battery powered applications.

Figure 24. Combining LM2662/LM2663 with LP2986 to Make a Negative Adjustable Regulator

Also, as shown in Figure 25 by operating the LM2662/LM2663 in voltage doubling mode and adding a low

dropout regulator (such as LP2986) at the output, we can get +5V output from an input as low as +3.3V.

Figure 25. Generating +5V from +3.3V Input Voltage

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REVISION HISTORY

Changes from Revision C (May 2013) to Revision D Page

• Changed layout of National Data Sheet to TI format .......................................................................................................... 12

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PACKAGE OPTION ADDENDUM

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Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LM2662M NRND SOIC D 8 95 TBD Call TI Call TI -40 to 85 LM26

62M

LM2662M/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) SN | CU SN Level-1-260C-UNLIM -40 to 85 LM26

62M

LM2662MX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) SN | CU SN Level-1-260C-UNLIM -40 to 85 LM26

62M

LM2663M NRND SOIC D 8 95 TBD Call TI Call TI -40 to 85 LM26

63M

LM2663M/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) SN | CU SN Level-1-260C-UNLIM -40 to 85 LM26

63M

LM2663MX NRND SOIC D 8 2500 TBD Call TI Call TI -40 to 85 LM26

63M

LM2663MX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) SN | CU SN Level-1-260C-UNLIM -40 to 85 LM26

63M

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

PACKAGE OPTION ADDENDUM

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Addendum-Page 2

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LM2662MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM2663MX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM2663MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 23-Sep-2013

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LM2662MX/NOPB SOIC D 8 2500 367.0 367.0 35.0

LM2663MX SOIC D 8 2500 367.0 367.0 35.0

LM2663MX/NOPB SOIC D 8 2500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 23-Sep-2013

Pack Materials-Page 2

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Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications

Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers

DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps

DSP dsp.ti.com Energy and Lighting www.ti.com/energy

Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial

Interface interface.ti.com Medical www.ti.com/medical

Logic logic.ti.com Security www.ti.com/security

Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense

Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video

RFID www.ti-rfid.com

OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com

Wireless Connectivity www.ti.com/wirelessconnectivity

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265