02/2009
Figure 1: Block Diagram
FEATURES
• InGaP HBT Technology
• Low prole 1.1 mm
• Small Package Outline 6 mm x 6 mm
• EGPRS Capable (class 12)
• Integrated Reference Voltage
GMSK MODE
• Integrated power control (CMOS)
• +35 dBm GSM850/900 Output Power
• +33 dBm DCS/PCS Output Power
• 55 % GSM850/900 PAE
• 52 % DCS/PCS PAE
• Power control range > 50 dB
EDGE MODE
• +28.5 dBm GSM850/900 Output Power
• +27.5 dBm DCS/PCS Output Power
• -66 dBc Typical ACPR (400 kHz)
• -78 dBc Typical ACPR (600 kHz)
APPLICATIONS
• Dual/Tri/Quad Band Handsets, PDAs and Data
Devices
PRODUCT DESCRIPTION
This quad band power amplier module supports dual,
tri and quad band applications for both GMSK and
8-PSK modulation schemes. There are two amplier
chains, one to support GSM850/900 bands, the other
for DCS/PCS bands.
The module includes an integrated power control
scheme for use in the GMSK mode. This facilitates
fast and easy production calibration and reduces the
number of external components required to complete
a power control function. The amplier’s power control
range is typically 55 dB, with the output power set by
applying an analog voltage to VRAMP.
In EDGE mode, the VRAMP pin is disabled and no spe-
cic voltage is required for proper operation. Output
power is controlled by varying the input power.
All of the RF ports for this device are internally matched
to 50Ω.
AWT6172
GSM/GPRS/EDGE Power Amplier
Module with Integrated Power Control
PRELIMINARY DATA SHEET - REV 1.4
DCS/PCS_IN
GSM850/900_IN
DCS/PCS_OUT
GSM850/900_OUT
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Figure 2: Pinout (X - ray Top View)
DCS/PCS_IN
BS
GSM850/900_IN GSM850/900_OUT
DCS/PCS_OUT
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 1: Pin Description
PIN NAME DESCRIPTION
1DCS/PCS_IN RF input to the DCS/PCS PA. There is a 175 shunt resistor before the DC
blocking capacitor to set the input impedance
2BS Band select logic pin. Logic low selects the GSM PA and a logic high selects
the DCS/PCS PA
3TX_EN TX enable logic pin, a logic high will enable the PA
4 V
BATT
Battery supply connection
5V
MODE
Logic pin for selection of GMSK or 8PSK (EDGE) mode. A logic low selects
GMSK mode and a logic high selects the 8PSK mode
6 V
RAMP
Analog output power control pin
7GSM850/900_IN RF input to GSM850/900 PA.
8 V
BIAS
V
BIAS
logic input. A logic low sets a low bias point for current savings at low
power levels, a logic high sets a high bias point for meeting linearity
perfomance up to the maximum specified linear ouptut power
9GND Ground
10 GND Ground
11 GSM850/900_OUT RF output for GSM850/900 bands (DC blocked)
12 GND Ground
13 GND Ground
14 GND Ground
15 GND Ground
16 GND Ground
17 DCS/PCS_OUT RF output for DCS/PCS bands (DC blocked)
18 GND Ground
19 GND Ground
20 GND Ground
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these
conditions. Exposure to absolute ratings for extended periods
of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
Although protection circuitry has been designed into this device, proper precautions
should be taken to avoid exposure to electrostatic discharge (ESD) during handling and
mounting. Human body model HBM employed is resistance = 1500Ω, capacitance = 100pF.
Table 3: ESD Ratings
Table 4: Digital Inputs
PARAMETER MIN MAX UNITS
Supply Voltage (VBATT) -0.5 +6 V
RF Input Power (RFIN)- 12 dBm
Control Voltage (VRAMP) -0.3 3.0 V
Storage Temperature (TSTG) -55 150 °C
PARAMETER SYMBOL MIN TYP MAX UNITS
Logic High Voltage VIH 1.2 -3.0 V
Logic Low Voltage VIL -0.5 -0.5 V
Logic High Current |IIH| - - 30 A
Logic Low Current |IIL| - - 30 A
PARAMETER METHOD RATING UNIT
ESD Threshold voltage (RF ports) HBM 2.5 kV
ESD Threshold voltage (control inputs) HBM 2.5 kV
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 5: Logic Control Table
Notes:
(1) POUT +20 dBm.
(2) POUT +19 dBm.
OPERATIONAL MODE VMODE BS TX_EN VBIAS NOTES
GSM850/900 GMSK LOW LOW HIGH XVRAMP Controls Output
Power, X = Don't Care
DCS/PCS GMSK LOW HIGH HIGH XVRAMP Controls Output
Power, X = Don't Care
GSM850/900 EDGE HIGH LOW HIGH HIGH VRAMP Control Disabled,
Fixed Gain PA
DCS/PCS EDGE HIGH HIGH HIGH HIGH VRAMP Control Disabled,
Fixed Gain PA
GSM850/900 EDGE (Low Power
Levels) (1) HIGH LOW HIGH LOW VRAMP Control Disabled,
Fixed Gain PA
DCS/PCS EDGE (Low Power
Levels) (2) HIGH HIGH HIGH LOW VRAMP Control Disabled,
Fixed Gain PA
PA DISABLED X X LOW XX = Don't Care
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 6: Operating Ranges
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 7: Electrical Characteristics for GSM850 GMSK Mode
Unless otherwise specied: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = LOW, TX_EN = HIGH, VMODE = LOW
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency
(
F
o
)
824 -849 MHz
Input Power 0+2 +4 dBm
Output Power, P
MAX
34.5 35.1 -dBm
Degraded Output Power 32.5 33.5 -dBm V
BATT
= 3.2 V, T
C
= +85 °C
P
IN
= 0 dBm
PAE @ P
MAX
47 54 - %
Forward Isolation 1 --45 -30 dBm TX_EN = LOW, P
IN
= +4 dBm
Forward Isolation 2 --28 -10 dBm TX_EN = HIGH, V
RAMP
= 0.25 V,
P
IN
= +4 dBm
Cross Isolation
F
o
@ DCS/PCS port
2F
o
, 3F
o
@ DCS/PCS port
-
-
-2
-22
+2
-16
dBm P
OUT
34.5 dBm
Harmonics
Second Harmonic (2F
o
)
Third Harmonic (3F
o
)
4F
o
to 15F
o
-
-
-
-21
-20
-20
-10
-10
-8
dBm P
OUT
34.5 dBm
Stability (all spurious)
Output Load VSWR = 6:1, All Phases P
OUT
34.5 dBm
- - -36 dBm F
OUT
< 1 GHz, RBW = 3 MHz
- - -30 dBm F
OUT
> 1 GHz, RBW = 3 MHz
Ruggedness No Degradation, No Damage Load VSWR = 10:1, All Phase Angles;
P
OUT
34.5 dBm
RX Noise Power --84 -81 dBm F
TX
= 849 MHz, RBW = 100 kHz
F
RX
= 869 to 894 MHz, P
OUT
< 34.5 dBm
Input Return Loss - - 2.5:1 VSWR
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 8: Electrical Characteristics for GSM900 GMSK Mode
Unless otherwise specied: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = LOW, TX_EN = HIGH, VMODE = LOW
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency ( Fo )880 -915 MHz
Input Power 0+2 +4 dBm
Output Power, P
MAX
34.5 35.1 -dBm
Degraded Output Power 32.5 33.5 -dBm V
BATT
= 3.2 V, T
C
= +85 °C
P
IN
= 0 dBm
PAE @ P
MAX
49 55 - %
Forward Isolation 1 --45 -30 dBm TX_EN = LOW, P
IN
= +4 dBm
Forward Isolation 2 --27 -10 dBm TX_EN = HIGH, V
RAMP
= 0.25 V,
P
IN
= +4 dBm
Cross Isolation
Fo @ DCS/PCS port
2Fo, 3Fo @ DCS/PCS port
-
-
-2
-21
+2
-16
dBm P
OUT
34.5 dBm
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-
-
-21
-23
-20
-10
-10
-8
dBm P
OUT
34.5 dBm
Stability (all spurious)
Output Load VSWR = 6:1, All Phases P
OUT
34.5 dBm
- - -36 dBm F
OUT
< 1 GHz, RBW = 3 MHz
- - -30 dBm F
OUT
> 1 GHz, RBW = 3 MHz
Ruggedness No Degradation, No Damage Load VSWR = 10:1, All Phase Angles;
P
OUT
34.5 dBm
RX Noise Power
10 MHz Offset
20 MHz Offset
-
-
-80
-84
-75
-81
dBm
F
TX
= 915 MHz, RBW = 100 kHz
F
RX
= 925 to 935 MHz, P
OUT
< 34.5 dBm
F
TX
= 915 MHz, RBW = 100 kHz
F
RX
= 935 to 960 MHz, P
OUT
< 34.5 dBm
Input Return Loss - - 2.5:1 VSWR
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 9: Electrical Characteristics for GSM850 EDGE Mode
Unless otherwise specied: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%
ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH
Notes:
(1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
(2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency ( Fo )824 -849 MHz
Linear P
OUT
(High Power Mode)
Linear P
OUT
(Low Power Mode)
28.5
20
-
-
-
-dBm V
BIAS
= High
V
BIAS
= Low
Linear Degraded Output Power
L
D
_P
OUT
(High Power Mode) (1)
L
D
_P
OUT
(Low Power Mode) (2)
26
17.5
-
-
-
-dBm
Meets ACPR and EVM limits specified
under nominal conditions
Linear Gain (High Power Mode) 29.0 31.5 34.0 dB V
BIAS
= High
Linear Gain (Low Power Mode) 24.0 28.5 34.0 dB V
BIAS
= Low
Gain Variation --0.015 -dB/oC-20 oC T
C
+85 oC
Power-Added Efficiency -22 - % POUT = 28.5 dBm
Icq (Low Power Mode) -100 -mA V
BIAS
= Low
Error Vector Magnitude (EVM) -25 %
Linearity
ACPR1
ACPR2
ACPR3
-
-
-
-38
-66
-79
-33
-58
-64
dBc
POUT < 28.5 dBm, BW = 30 kHz
Fo 200 kHz
Fo 400 kHz
Fo 600 kHz
Cross Isolation
Fo @ DCS/PCS port
2Fo, 3Fo @ DCS/PCS port
-
-
-7
-50
0
-20 dBm POUT < 28.5 dBm
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-
-
-40
-35
-20
-20
-15
-10
dBm POUT < 28.5 dBm
Stability (all spurious)
Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm
- - -36 dBm F
OUT
< 1 GHz, RBW = 3 MHz
- - -30 dBm F
OUT
> 1 GHz, RBW = 3 MHz
Ruggedness No Degradation, No Damage Load VSWR = 10:1, All Phase Angles;
P
OUT
28.5 dBm
RX Noise Power --83 -80 dBm F
TX
= 849 MHz, RBW = 100 kHz
F
RX
= 869 to 894MHz, P
OUT
< 28.5 dBm
Input Return Loss - - 2.5:1 VSWR
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 10: Electrical Characteristics for GSM900 EDGE Mode
Unless otherwise specied: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%
ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH
Notes:
(1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
(2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency ( Fo )880 -915 MHz
Linear P
OUT
(High Power Mode)
Linear P
OUT
(Low Power Mode)
28.5
20
-
-
-
-dBm V
BIAS
= High
V
BIAS
= Low
Linear Degraded Output Power
L
D
_P
OUT
(High Power Mode)
(1)
L
D
_P
OUT
(Low Power Mode)
(2)
26
17.5
-
-
-
-dBm
Meets ACPR and EVM limits specified
under nominal conditions
Linear Gain (High Power Mode) 29.0 32.0 34.0 dB V
BIAS
= High
Linear Gain (Low Power Mode) 24 29.0 34 dB V
BIAS
= Low
Gain Variation --0.015 -dB/
o
C-20
o
C T
C
+85
o
C
Power-Added Efficiency -22 - % POUT = 28.5 dBm
Icq (Low Power Mode) -100 -mA V
BIAS
= Low
Error Vector Magnitude (EVM) -25 %
Linearity
ACPR1
ACPR2
ACPR3
-
-
-
-36
-67
-79
-33
-58
-64
dBc
POUT < 28.5 dBm, BW = 30 kHz
Fo 200 kHz
Fo 400 kHz
Fo 600 kHz
Cross Isolation
Fo @ DCS/PCS port
2Fo, 3Fo @ DCS/PCS port
-
-
-7
-50
0
-20 dBm POUT < 28.5 dBm
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-
-
-40
-35
-20
-20
-15
-10
dBm POUT < 28.5 dBm
Stability (all spurious)
Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm
- - -36 dBm F
OUT
< 1 GHz, RBW = 3 MHz
- - -30 dBm F
OUT
> 1 GHz, RBW = 3 MHz
Ruggedness No Degradation, No Damage Load VSWR = 10:1, All Phase Angles;
P
OUT
28.5 dBm
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 10: Electrical Characteristics for GSM900 EDGE Mode (Continued)
Unless otherwise specied: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%
ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
RX Noise Power
10 MHz Offset
20 MHz Offset
-
-
-80
-83
-75
-80
dBm F
TX
= 915 MHz, RBW = 100 kHz
F
RX
= 925 to 935 MHz, P
OUT
< 28.5 dBm
F
TX
= 915 MHz, RBW = 100 kHz
F
RX
= 935 to 960 MHz, P
OUT
< 28.5 dBm
Input Return Loss - - 2.5:1 VSWR
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 11: Electrical Characteristics for DCS GMSK Mode
Unless otherwise specied: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = HIGH, TX_EN = HIGH, VMODE =LOW
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency 1710 -1785 MHz
Input Power 0+2 +4 dBm
Output Power, P
MAX
32 33 -dBm
Degraded Output Power 29.5 31 -dBm V
BATT
= 3.2 V, T
C
= +85 °C
PIN = 0 dBm
PAE @ P
MAX
45 53 - %
Forward Isolation 1 --40 -30 dBm TX_EN = LOW, P
IN
= +4 dBm
Forward Isolation 2 --27 -10 dBm TX_EN = HIGH, V
RAMP
= 0.25 V,
P
IN
= +4 dBm
Harmonics
Second Harmonic (2F
O
)
Third Harmonic (3F
O
)
4F
O
to 15F
O
-
-
-
-23
-28
-20
-10
-10
-8
dBm P
OUT
< 32 dBm
Stability (all spurious)
Output Load VSWR = 6:1 All Phases , POUT < 32dBm
- - -36 dBm F
OUT
< 1 GHz, RBW = 3 MHz
- - -30 dBm F
OUT
> 1 GHz, RBW = 3 MHz
Ruggedness No Degradation, No Damage Load VSWR = 10:1 All Phase Angles;
POUT < 32dBm
RX Noise Power --87 -78 dBm F
TX
= 1785 MHz, RBW = 100 kHz,
F
RX
=1805 to 1880 MHz, P
OUT
< 32 dBm
Input Return Loss - - 2.5:1 VSWR
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 12: Electrical Characteristics for PCS GMSK Mode
Unless otherwise specied: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = HIGH, TX_EN = HIGH, VMODE =LOW
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency ( Fo )1850 -1910 MHz
Input Power 0+2 +4 dBm
Output Power, P
MAX
32 33 -dBm
Degraded Output Power 29.5 31 -dBm V
BATT
= 3.2 V, T
C
= +85 °C
P
IN
= 0 dBm
PAE @ P
MAX
45 52 - %
Forward Isolation 1 --38 -30 dBm TX_EN = LOW, P
IN
= +4 dBm
Forward Isolation 2 --26 -10 dBm TX_EN = HIGH, V
RAMP
= 0.25 V,
P
IN
= +4 dBm
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-
-
-25
-30
-20
-10
-10
-8
dBm P
OUT
32 dBm
Stability (all spurious)
Output Load VSWR = 6:1, All P
OUT
32 dBm
- - -36 dBm F
OUT
< 1 GHz, RBW = 3 MHz
- - -30 dBm F
OUT
> 1 GHz, RBW = 3 MHz
Ruggedness No Degradation, No Damage Load VSWR = 10:1, All Phase Angles;
P
OUT
32 dBm
RX Noise Power --88 -79 dBm F
TX
= 1910 MHz, RBW = 100 kHz
F
RX
= 1930 to 1990 MHz, P
OUT
< 32 dBm
Input Return Loss - - 2.5:1 VSWR
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Table 13: Electrical Characteristics for DCS EDGE Mode
Unless otherwise specied: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VMODE = HIGH
Notes:
(1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
(2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency
(
F
o
)
1710 -1785 MHz
Linear P
OUT
(High Power Mode)
Linear P
OUT
(Low Power Mode)
27.5
19
-
-
-
-dBm V
BIAS
= High
V
BIAS
= Low
Linear Degraded Output Power
L
D
_P
OUT
(High Power Mode)
(1)
L
D
_P
OUT
(Low Power Mode)
(2)
25
16.5
-
-
-
-dBm
Meets ACPR and EVM limits specified
under nominal conditions
Linear Gain (High Power Mode) 34 37 40 dB V
BIAS
= High
Linear Gain (Low Power Mode) 30 36 40 dB V
BIAS
= Low
Gain Variation --0.04 -dB/
o
C-20
o
C T
C
+85
o
C
Power-Added Efficiency -20 - % P
OUT
= 27.5 dBm
Icq (Low Power Mode) -120 -mA V
BIAS
= Low
Error Vector Magnitude (EVM) -25 %
Linearity
ACPR1
ACPR2
ACPR3
-
-
-
-39
-65
-78
-33
-58
-64
dBc
P
OUT
< 27.5 dBm, BW = 30 kHz
F
o
200 kHz
F
o
400 kHz
F
o
600 kHz
Harmonics
Second Harmonic (2F
o
)
Third Harmonic (3F
o
)
4F
o
to 7F
o
-
-
-
-38
-47
-20
-20
-20
-10
dBm P
OUT
< 27.5 dBm
Stability (all spurious)
Output Load VSWR = 6:1 All Phases, P
OUT
< 27.5 dBm
- - -36 dBm F
OUT
< 1 GHz, RBW = 3 MHz
- - -30 dBm F
OUT
> 1 GHz, RBW = 3 MHz
Ruggedness No Degradation, No Damage Load VSWR = 10:1, All Phase Angles;
P
OUT
27.5 dBm
RX Noise Power --81 -76 dBm
F
TX
= 1785 MHz, RBW = 100 kHz
F
RX
= 1805 to 1880 MHz
P
OUT
< 27.5 dBm
Input Return Loss - - 2.5:1 VSWR
OBSOLETE
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Notes:
(1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
(2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
Table 14: Electrical Characteristics for PCS EDGE Mode
Unless otherwise specied: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VMODE = HIGH
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency ( Fo )1850 -1910 MHz
Linear P
OUT
(High Power Mode)
Linear P
OUT
(Low Power Mode)
27.5
19
-
-
-
-dBm V
BIAS
= High
V
BIAS
= Low
Linear Degraded Output Power
L
D
_P
OUT
(High Power Mode)
(1)
L
D
_P
OUT
(Low Power Mode)
(2)
25
16.5
-
-
-
-dBm
Meets ACPR and EVM limits specified
under nominal conditions
Linear Gain (High Power Mode) 33.0 36 39.5 dB V
BIAS
= High
Linear Gain (Low Power Mode) 29 35 39 dB V
BIAS
= Low
Gain Variation --0.044 -dB/
o
C-20
o
C T
C
+85
o
C
Power-Added Efficiency -20 - % POUT = 27.5 dBm
Icq (Low Power Mode) -120 -mA V
BIAS
= Low
Error Vector Magnitude (EVM) -25 %
Linearity
ACPR1
ACPR2
ACPR3
-
-
-
-38
-64
-77
-33
-57
-64 dBc
POUT < 27.5 dBm, BW = 30 kHz
Fo 200 kHz
Fo 400 kHz
Fo 600 kHz
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-
-
-40
-46
-20
-20
-20
-10
dBm POUT < 27.5 dBm
Stability (all spurious)
Output Load VSWR = 6:1 All Phases, POUT < 27.5 dBm
- - -36 dBm F
OUT
< 1 GHz, RBW = 3 MHz
- - -30 dBm F
OUT
> 1 GHz, RBW = 3 MHz
Ruggedness No Degradation, No Damage Load VSWR = 10:1, All Phase Angles;
P
OUT
27.5 dBm
RX Noise Power --82 -76 dBm F
TX
= 1910 MHz, RBW = 100 kHz
F
RX
= 1930 to 1990 MHz
P
OUT
< 27.5 dBm
Input Return Loss - - 2.5:1 VSWR
OBSOLETE
16
AWT6172
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
APPLICATION INFORMATION
Figure 3: Recommended Application Circuit
DCS/PCS_IN DCS/PCS_OUT
GSM850/900_IN GSM850/900_OUT
OBSOLETE
17
AWT6172
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
PACKAGE OUTLINE
Figure 4: M33 Package Outline - 20 Pin 6 mm x 6 mm x 1.1 mm Surface Mount Module
OBSOLETE
18
AWT6172
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Figure 5: Recommended PCB Footprint
OBSOLETE
19
AWT6172
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
Figure 5B: Recommended PCB Footprint Notes
OBSOLETE
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
20
AWT6172
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
ORDERING INFORMATION
ORDER
NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION COMPONENT PACKAGING
AWT6172RM33P8 -20 °C to +85°C
RoHS-compliant 20 Pin
6 mm x 6 mm x 1.1 mm
Surface Mount Module
Tape and Reel, 2500 pieces per reel
AWT6172RM33P9 -20 °C to +85°C
RoHS-compliant 20 Pin
6 mm x 6 mm x 1.1 mm
Surface Mount Module
Partial Tape and Reel
AWT6172HM33P8 -20 °C to +85°C
Halogen-free and
RoHS-compliant 20 pin
6mm x 6mm x 1.1mm
Surface Mount Module
Tape and Reel, 2500 pieces per reel
AWT6172HM33P9 -20 °C to +85°C
Halogen-free and
RoHS-compliant 20 pin
6mm x 6mm x 1.1mm
Surface Mount Module
Partial Tape and Reel
OBSOLETE