2SC1623
NPN Silicon
Epitaxial Transistors
Features
• High DC Current Gain: hFE=200 TYP.(VCE=6.0V, IC=1.0mA)
• High voltage: VCEO=50V
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current 100 mA
PC Collector power dissipation 200 mW
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
ICBO Collector Cutoff Current
(VCB=60Vdc,IE=0) --- --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- --- 0.1 uAdc
ON CHARACTERISTICS
hF DC Current Gain*
(IC=1.0mAdc, VCE=6.0Vdc) 90 200 600 ---
VCE(sat) Collector Saturation Voltage*
(IC=100mAdc, IB=10mAdc) --- 0.15 0.3 Vdc
VBE(SAT) Base Saturation Voltage*
(IC=100mAdc,IB=10mAdc) --- 0.86 1.0 Vdc
VBE Base Emitter Voltage*
(VCE=6.0Vdc, IC=1.0mAdc) 0.55 0.62 0.65 Vdc
Cob Collector Capacitance
(VCB=6.0Vdc, IE=0, f=1.0MHz) --- 3.0 --- pF
fT Gain Bandwidth product
(VCE=6.0Vdc, IE=10mAdc) --- 250 --- MHz
hFE CLASSIFICATION
Marking L4 L5 L6 L7
hFE 90-180 135-270 200-400 300-600
* Pulse Test PW<350us, duty cycle<2%
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
Revision: 3 2006/05/10
omponents
20736 Marilla Street Chatsworth
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TM
Micro Commercial Components
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B
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• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
MCC
www.mccsemi .com
Revision: 3 2006/05/10
TM
Micro Commercial Components
www.mccsemi.com
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