ELECTRICAL CHARACTERISTICS (at T.~1 : 25C unles i otherwise stated) I SYMBOL I MIN. TYP. v(aR)ceo -140 -170 Collector-Emitter Breakdown Voltage `IBR)GR -140 -170 v le-lpA, Collector-Emitter Breakdown Voltaga `( BFOCEO -1oo -120 v 1~-10mA* Emitter-Base Breakdown Voltage `( SR)EBO -8 v lE=-loo@ Collactor Cut-Off Current Iceo PARAMETER Collector-Base Breakdown Voltage v Collector Cut-Off Current -6 Y -50 -1 nA PA v~~-loov Vc~-lOOV, T,mw 100"C I -50 -1 z v~~-loov VCS=-lOOV,T.mtilOOOC -lo nA VES=+V -20 -90 -160 -300 -50 -115 -220 -420 mV mV mV mV 1~-100mA, lF-lOmA* l~-lAr la=-lOOmA* 1~-2A, la=-200mA* l&-4A, lr-400mA* -1010 -1170 mV 1~-4A, 1~-400mA* -925 -1160 mV IC=-4A, VW-IV* ---- Collector-Emitter Saturation Base-Emitter Saturation Voltage vaE(~a) ---- 1 va~,on) --. 100 100 50 30 Static Forward Current Transfer Transition Frequency RB <lkQ I lCER R<lkQ Base-Emitter Turn-On Voltage MAX. f, 200 200 90 50 15 i~-lOmA, V&-lV* l~-lA, VW-lV* i~-3A, V&-l V* 1~-4A, VW-l V' 1~-10A, VCF-lV" 300 125 MHz 1~-100mA, VCP-lOV f=50MHz 65 pF VCF-lOV, 110 460 ns ns 1~-2A, laF-200mA lap200mA, vc~-lov ---- Measured under pulsed conditions. Pulse width= 300ps. Duty cycles pice parameter data is available upon request for this device 3-282 % f=lMHz E(EI TYPICAL CHAF ,CTERISTICS ,---- --- ---- 0 [)1 0 I'('I IC 1 0,1 ICollectnr Current VCE(sat) ____-- 1') 20 " OWJ1 001 k. (Amps) Collector 01 VCE(sat) V iC 1 Current 10x (Amps) v IC -- Ic ILollector Current (Amps) `~BE(sst) hFE V IC V IC 02!_Ud+ IC Collector Current l/BE(on) (Amps) Safe Opereting V IC 3-283 Area