TRANSYS BDX54, BDX54A, BDX54B, BDX54C FLECTRONIES LIMITED PNP SILICON POWER DARLINGTONS TO-220 PACKAGE @ Designed for Complementary Use with (TOP VIEW) BDX53, BDX53A, BDX53B and BDX53C 60 W at 25C Case Temperature 8 A Continuous Collector Current C) E Minimum heg of 750 at3 V,3 A Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDX54 -45 BDX54A -60 Collector-base voltage (Ip = 0) BDX54B Vecso 80 Vv BDX54C -100 BDX54 -45 Collector-emitter voltage (lp = 0) BDXS4A VcEo 60 Vv BDX54B -80 BDX54C -100 Emitter-base voltage VEBo 5 Vv Continuous collector current lo -8 A Continuous base current lB -0.2 A Continuous device dissipation at (or below) 25C case temperature (see Note 1) Prot 60 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Prot 2 WwW Operating junction temperature range Tj -65 to +150 C Operating temperature range Tstg -65 to +150 C Operating free-air temperature range Ta -65 to +150 C NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.48 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 MW/C. BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT BDX54 -45 Vv Collector-emitter I= -100 mA Ie =0 (see Note 3) BDX54A -60 Vv (BR)CEO breakdown voltage c B BDX54B -80 BDX54C -100 Vop= -30V Ip=0 BDX54 -0.5 | Collector-emitter Voge = -30V Ip =0 BDX54A -0.5 mA CEO cut-off current Vop = -40V Ip =0 BDX54B -0.5 Vop = -50V IRp=0 BDX54C -0.5 Vop= -45V lp =0 BDX54 -0.2 Collector cut-off Vep= -60V lp =0 BDX54A -0.2 IcBo mA current Vep= -80V lp =0 BDX54B -0.2 Vop = -100 V lp =0 BDX54C -0.2 leo Emitter cut-off Vep= BV lo =0 2 mA current hee onward current Voe= -3V. Ig=-3A (see Notes 3 and 4) 750 transfer ratio Vacca) oer Ip= -12mA Io=-3A _ (See Notes 3. and 4) 25| V saturation voltage Voeteaty e eotoremitter Ip= -12mA Io=-3A _ (See Notes 3. and 4) 2 V (sat) saturation voltage B c Veo Parallel diode Ie = 3A Ip =0 25 Vv forward voltage NOTES: 3. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN | TYP | MAX | UNIT Rec Junction to case thermal resistance 2.08 C/W Roya Junction to free air thermal resistance 62.5 C/W resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT ton Turn-on time Ic =-3A IBion) = -12 MA IBott) = 12 MA 1 us tott Turn-off time Veevotty = 4.2 V R_ =102 tp = 20 us, dc < 2% 5 Us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE VS VS COLLECTOR CURRENT COLLECTOR CURRENT 40000 -3-0 T T Tg = -40C > t, = 300 us, duty cycle < 2% To= 25C 5 Iz =1,/100 T, = 100C D 25 = 10000 g g 5 e ~ 8 5 8 BS -A15 Ye 8 2 in = 1000 5 40 " 8 c 8 C = 9.5 ow Nt, = -40C | 5 SN Voge = -3V i NIST. = 28C t, = 300 us, duty cycle < 2% > ST, = 100C 100 0 ! ! Lt -0-5 -1-0 -10 -0-5 -1-0 -10 |, - Collector Current - A I, - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3-0 T T TTT T= -40C Ty = 25C \ T, = 100C 2.9} ' \ \ 25 \ _ Ve -1-0 ES _~ 1-5 4 A \ Vee(sat - Base-Emitter Saturation Voltage - V lz =1,/100 t, = 300 ps, duty cycle < 2% -0-5 -0-5 -1-0 -10 |, - Collector Current - A Figure 3. BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 DC Operation ty = 300 us, d=0.1=10% < = -10 e 6 S 3 9 oO 5-1-0 BDX54 BDX54A BDX54B BDX54C -0-1 -1-0 -10 -100 -1000 Vog - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION VS CASE TEMPERATURE 80 70 = & 60 g i \ 5 40 \ Ee = 30 \ 5 \ = 29 N oO IN 10 ~ 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 5. BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0220 470 4,20 3,96 < > 1,32 9371 2,95 123 L 2,54 see Note B 6,6 __. CD 4 60 15,90 14,55 see Note C _ 64 3,5 ee eel ph ____ v Kl 14,1 1,70 12,7 0,97 1,07 0,61 @) @) @) i u 2,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 : VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.