AFT23S160W02SR3 AFT23S160W02GSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
These 45 watt RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 2300 to 2400 MHz.
•Typical Single−Carrier W−CDMA Performance: VDD = 28 Vdc,
IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency Gps
(dB) hD
(%) Output PAR
(dB) ACPR
(dBc) IRL
(dB)
2300 MHz 17.7 31.0 6.8 −34.6 −18
2350 MHz 17.8 30.5 6.7 −34.5 −25
2400 MHz 17.9 30.3 6.6 −33.9 −14
Features
•Designed for Wide Instantaneous Bandwidth Applications
•Greater Negative Gate−Source Voltage Range for Improved Class C
Operation
•Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
•Optimized for Doherty Applications
•In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13−inch Reel.
Document Number: AFT23S160W02S
Rev. 0, 11/201
3
F
reescale Semiconductor
T
echnical Data
2300−2400 MHz, 45 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
AFT23S160W02SR3
AFT23S160W02GSR3
NI−780S−2L
AFT23S160W02SR3
Figure 1. Pin Connections
(Top View)
RFin/VGS 21
RFout/VDS
NI−780GS−2L
AFT23S160W02GSR3
©
Freescale Semiconductor, Inc., 2013. All rights reserved.
2 RF Device Data
Freescale Semiconductor, Inc.
AFT23S160W02SR3 AFT23S160W02GSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain−Source Voltage VDSS −0.5, +65 Vdc
Gate−Source Voltage VGS −6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg −65 to +150 °C
Case Operating Temperature Range TC−40 to +125 °C
Operating Junction Temperature Range (1,2) TJ−40 to +225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW, 28 Vdc, IDQ = 1100 mA, 2400 MHz RθJC 0.53 °C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22−A114) 2
Machine Model (per EIA/JESD22−A115) B
Charge Device Model (per JESD22−C101) IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 5 μAdc
Gate−Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 219 μAdc) VGS(th) 0.9 1.3 1.7 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) VGS(Q) 1.4 1.8 2.2 Vdc
Drain−Source On−Voltage
(VGS = 6 Vdc, ID = 2.19 Adc) VDS(on) 0.1 0.2 0.3 Vdc
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 W Avg., f = 2400 MHz,
Single−Carrier W−CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain Gps 17.0 17.9 19.0 dB
Drain Efficiency ηD28.0 30.3 — %
Output Peak−to−Average Ratio @ 0.01% Probability on CCDF PAR 6.1 6.6 — dB
Adjacent Channel Power Ratio ACPR — −33.9 −31.5 dBc
Input Return Loss IRL —−14 −8 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes − AN1955.
4. Part internally matched both on input and output.
5. Measurements made w ith device in straight l ead configuration b efore a ny lead forming o peration is applied. Lead f orming is u sed for g ull
wing (GS) parts. (continued)
AFT23S160W02SR3 AFT23S160W02GSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1100 mA, f = 2350 MHz
VSWR 10:1 at 32 Vdc, 165 W CW Output Power
(3 dB Input Overdrive from 210 W CW Rated Power) No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 2300−2400 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB — 155 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2300−2400 MHz bandwidth)
Φ— −15.5 — °
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point) VBWres — 80 — MHz
Gain Flatness in 100 MHz Bandwidth @ Pout = 45 W Avg. GF— 0.14 — dB
Gain Variation over Temperature
(−30°C to +85°C) ΔG — 0.018 — dB/°C
Output Power Variation over Temperature
(−30°C to +85°C) ΔP1dB — 0.01 — dB/°C
4 RF Device Data
Freescale Semiconductor, Inc.
AFT23S160W02SR3 AFT23S160W02GSR3
Figure 2. AFT23S160W02SR3 Test Circuit Component Layout
CUT OUT AREA
C8
C9
C10
C11* C13
R3
C14
C15
C12
C7
R2
C6
C3 C5*
C4*
C1
C2
R1
AFT23S160W02S/02GS
Rev. 1
*C4, C5 and C11 are mounted vertically.
VGG
VDD
D51578
VDD
Table 5. AFT23S160W02SR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C6 2.2 μF Chip Capacitors C3225X7R1H225M200AB TDK
C2, C5, C7, C10, C11, C14 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC
C3 0.1 pF Chip Capacitor ATC100B0R1BT500XT ATC
C4, C13 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC
C8, C12 470 μF, 63 V Electrolytic Capacitors B41693A8477Q7 EPCOS
C9, C15 10 μF Chip Capacitors C5750X7S2A106M230KB TDK
R1, R2 3.3 Ω, 1/4 W Chip Resistors WCR1206-3R3FI Welwyn
R3 0 Ω, 2 A Chip Jumper WCR1206-R005JI Welwyn
PCB Rogers RO4350B, 0.020″, εr = 3.5 D51578 MTL
AFT23S160W02SR3 AFT23S160W02GSR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2290
ACPR
f, FREQUENCY (MHz)
Figure 3. Single−Carrier Output Peak−to−A verage Ratio Compression
(PARC) Broadband Performance @ Pout = 45 Watts Avg.
-28
-12
-16
-20
-24
17
18
17.9
17.8
-37
32
30
28
26
-33
-33.8
-34.6
-35.4
ηD, DRAIN
EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
17.7
17.6
17.5
17.4
17.3
17.2
17.1
2305 2320 2335 2350 2365 2380 2395 2410
24
-36.2
-32
ACPR (dBc)
PARC
Figure 4. Intermodulation Distortion Products
versus Two−Tone Spacing
TWO-TONE SPACING (MHz)
10
-60
-10
-20
-30
-50
1 300
IMD, INTERMODULATION DISTORTION (dBc)
-40
IM3-U
IM5-U
IM5-L
IM7-L
IM7-U
Figure 5. Output Peak−to−A verage Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-1
-3
25
0
-2
-4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
15 35 45 65
0
60
50
40
30
20
10
ηD, DRAIN EFFICIENCY (%)
-3 dB = 43 W
55
ηD
ACPR PARC
ACPR (dBc)
-45
-15
-20
-25
-35
-30
-40
19
Gps, POWER GAIN (dB)
18.5
18
17.5
17
16.5
16
Gps
-1 dB = 27 W-2 dB = 32 W
IRL
PARC (dB)
-3.5
-3.1
-3.2
-3.3
-3.4
-3.6
-5
Gps
IM3-L
1
VDD = 28 Vdc, IDQ = 1100 mA
f = 2350 MHz, Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD = 28 Vdc, Pout = 144 W (PEP)
IDQ = 1100 mA, Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
VDD = 28 Vdc, Pout = 45 W (Avg.)
IDQ = 1100 mA, Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
100
6 RF Device Data
Freescale Semiconductor, Inc.
AFT23S160W02SR3 AFT23S160W02GSR3
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single−Carrier W−CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-10
-20
15.5
18.5
0
60
50
40
30
20
ηD, DRAIN EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
18
17.5
10 100 200
10
-60
ACPR (dBc)
17
16.5
16
0
-30
-40
-50
Figure 7. Broadband Frequency Response
-10
20
f, FREQUENCY (MHz)
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1100 mA
10
5
0
GAIN (dB)
15
-5
1600 1800 2000 2200 2400 2600 2800 3000 3200
-35
25
15
5
-5
-15
IRL (dB)
-25
Gain
IRL
2400 MHz
VDD = 28 Vdc, IDQ = 1100 mA
Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
2300 MHz
2350 MHz
2350 MHz
2400 MHz
2300 MHz
2400 MHz
2350 MHz
2300 MHz
AFT23S160W02SR3 AFT23S160W02GSR3
7
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1246 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz) Zsource
(W)Zin
(W)
Max Output Power
P1dB
Zload (1)
(W)Gain (dB) (dBm) (W) hD
(%) AM/PM
(5)
2300 3.05 - j9.21 3.18 + j8.65 2.49 - j5.63 18.0 53.4 220 53.3 -11
2350 4.59 - j10.1 4.32 + j9.21 2.59 - j6.01 17.9 53.3 215 52.1 -11
2400 7.50 - j11.0 6.42 + j10.4 2.63 - j6.16 18.0 53.2 208 51.0 -12
f
(MHz) Zsource
(W)Zin
(W)
Max Output Power
P3dB
Zload (2)
(W)Gain (dB) (dBm) (W) hD
(%) AM/PM
(5)
2300 3.05 - j9.21 3.21 + j9.07 2.46 - j5.99 15.7 54.2 264 53.7 -17
2350 4.59 - j10.1 4.52 + j9.79 2.64 - j6.20 15.8 54.1 257 53.2 -17
2400 7.50 - j11.0 6.97 + j11.1 2.79 - j6.34 16.0 54.0 252 52.8 -17
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 8. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 1246 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz) Zsource
(W)Zin
(W)
Max Drain Efficiency
P1dB
Zload (1)
(W)Gain (dB) (dBm) (W) hD
(%) AM/PM
(5)
2300 3.05 - j9.21 3.12 + j8.82 3.76 - j3.36 20.1 52.0 158 61.8 -17
2350 4.59 - j10.1 4.25 + j9.42 3.59 - j3.23 20.1 51.6 145 60.7 -18
2400 7.50 - j11.0 6.33 + j10.6 3.21 - j3.60 20.1 51.8 151 60.2 -17
f
(MHz) Zsource
(W)Zin
(W)
Max Drain Efficiency
P3dB
Zload (2)
(W)Gain (dB) (dBm) (W) hD
(%) AM/PM
(5)
2300 3.05 - j9.21 3.12 + j9.19 3.83 - j3.50 18.0 52.8 189 63.5 -25
2350 4.59 - j10.1 4.42 + j9.93 3.59 - j3.43 18.1 52.5 180 62.5 -26
2400 7.50 - j11.0 6.85 + j11.3 3.33 - j3.72 18.0 52.7 186 62.1 -25
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8 RF Device Data
Freescale Semiconductor, Inc.
AFT23S160W02SR3 AFT23S160W02GSR3
P1dB − TYPICAL SIDE LOAD PULL CONTOURS — 2350 MHz
-8
-2
-4
IMAGINARY (Ω)
33.5 425
-3
-5
-6
4.5
-7
2.5
-8
-2
-4
IMAGINARY (Ω)
33.5 425
-3
-5
-6
4.5
-7
2.5
-8
-2
-4
33.5 425
-3
-5
-6
4.5
-7
2.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 10. P1dB Load Pull Output Power Contours (dBm)
REAL (Ω)
-8
-2
-4
IMAGINARY (Ω)
33.5 425
-3
-5
-6
4.5
-7
2.5
Figure 11. P1dB Load Pull Efficiency Contours (%
)
REAL (Ω)
IMAGINARY (Ω)
Figure 12. P1dB Load Pull Gain Contours (dB)
REAL (Ω)
Figure 13. P1dB Load Pull AM/PM Contours (5)
REAL (Ω)
51
50.5
50
P
E51.5
52
52.5
53
P
E
60
58
56
54
52
50
48
46
44
58
P
E
19.5
20
19
18.5
18
17.5
17
16.5
20.5
P
E
-26-24 -22 -20 -18
-16
-14
-12
AFT23S160W02SR3 AFT23S160W02GSR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB − TYPICAL SIDE LOAD PULL CONTOURS — 2350 MHz
-8
-2
-4
IMAGINARY (Ω)
33.5 425
-3
-5
-6
4.5
-7
2.5
-8
-2
-4
IMAGINARY (Ω)
33.5 425
-3
-5
-6
4.5
-7
2.5
-8
-2
-4
33.5 425
-3
-5
-6
4.5
-7
2.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 14. P3dB Load Pull Output Power Contours (dBm)
REAL (Ω)
-8
-2
-4
IMAGINARY (Ω)
33.5 425
-3
-5
-6
4.5
-7
2.5
Figure 15. P3dB Load Pull Efficiency Contours (%
)
REAL (Ω)
IMAGINARY (Ω)
Figure 16. P3dB Load Pull Gain Contours (dB)
REAL (Ω)
Figure 17. P3dB Load Pull AM/PM Contours (5)
REAL (Ω)
52.5
P
E
53
51.5
51
P
E
60
58
56
54
52
50
48
46
62
P
E
18.5
18
17.5
17
14.5 15
P
E
-26 -24
-22
-20
-18
-16
52
53.5
54
52
54
60
15.5
16 16.5
-28
-30
10 RF Device Data
Freescale Semiconductor, Inc.
AFT23S160W02SR3 AFT23S160W02GSR3
PACKAGE DIMENSIONS
AFT23S160W02SR3 AFT23S160W02GSR3
11
RF Device Data
Freescale Semiconductor, Inc.
12 RF Device Data
Freescale Semiconductor, Inc.
AFT23S160W02SR3 AFT23S160W02GSR3
AFT23S160W02SR3 AFT23S160W02GSR3
13
RF Device Data
Freescale Semiconductor, Inc.
14 RF Device Data
Freescale Semiconductor, Inc.
AFT23S160W02SR3 AFT23S160W02GSR3
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
•RF High Power Model
•.s2p File
Development Tools
•Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Nov. 2013 •Initial Release of Data Sheet
AFT23S160W02SR3 AFT23S160W02GSR3
15
RF Device Data
Freescale Semiconductor, Inc.
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Document Number: AFT23S160W02S
Rev. 0, 11/2013
