AD7537
REV. 0 –3–
TIMING CHARACTERISTICS
Limit at Limit at
Limit at T
A
= –408CT
A
= +558C
Parameter T
A
= +258C to +858C to +1258C Units Test Conditions/Comments
t
1
15 15 30 ns min Address Valid to Write Setup Time
t
2
15 15 25 ns min Address Valid to Write Hold Time
t
3
60 80 80 ns min Data Setup Time
t
4
25 25 25 ns min Data Hold Time
t
5
0 0 0 ns min Chip Select or Update to Write Setup Time
t
6
0 0 0 ns min Chip Select or Update to Write Hold Time
t
7
80 80 100 ns min Write Pulse Width
t
8
80 80 100 ns min Clear Pulse Width
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS*
(T
A
= +25°C unless otherwise stated)
V
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V, +17 V
V
REFA
, V
REFB
to AGNDA, AGNDB . . . . . . . . . . . . . . . . ±25 V
V
RFBA
, V
RFBB
to AGNDA, AGNDB . . . . . . . . . . . . . . . . ±25 V
Digital Input Voltage to DGND . . . . . . . –0.3 V, V
DD
+0.3 V
I
OUTA
, I
OUTB
to DGND . . . . . . . . . . . . . . –0.3 V, V
DD
+0.3 V
AGNDA, AGNDB to DGND . . . . . . . . . –0.3 V, V
DD
+0.3 V
Power Dissipation (Any Package)
To +75°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
Derates Above +75°C . . . . . . . . . . . . . . . . . . . . . 6 mW/°C
Operating Temperature Range
Commercial Plastic (J, K, L Versions) . . . . –40°C to +85°C
Industrial Hermetic (A, B, C Versions) . . . –40°C to +85°C
Extended Hermetic (S, T, U Versions) . . –55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7537 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
Figure 1. Timing Diagram
ORDERING GUIDE
1
Temperature Relative Gain Package
Model
2
Range Accuracy Error Option
3
AD7537JN –40°C to +85°C±1 LSB ±6 LSB N-24
AD7537KN –40°C to +85°C±1/2 LSB ±3 LSB N-24
AD7537LN –40°C to +85°C±1/2 LSB ±1 LSB N-24
AD7537JP –40°C to +85°C±1 LSB ±6 LSB P-28A
AD7537KP –40°C to +85°C±1/2 LSB ±3 LSB P-28A
AD7537LP –40°C to +85°C±1/2 LSB ±1 LSB P-28A
AD7537AQ –40°C to +85°C±1 LSB ±6 LSB Q-24
AD7537BQ –40°C to +85°C±1/2 LSB ±3 LSB Q-24
AD7537CQ –40°C to +85°C±1/2 LSB ±1 LSB Q-24
AD7537SQ –55°C to +125°C±1 LSB ±6 LSB Q-24
AD7537TQ –55°C to +125°C±1/2 LSB ±3 LSB Q-24
AD7537UQ –55°C to +125°C±1/2 LSB ±2 LSB Q-24
AD7537SE –55°C to +125°C±1 LSB ±6 LSB E-28A
AD7537TE –55°C to +125°C±1/2 LSB ±3 LSB E-28A
AD7537UE –55°C to +125°C±1/2 LSB ±2 LSB E-28A
NOTES
1
Analog Devices reserves the right to ship ceramic packages (D-24A) in lieu of
cerdip packages (Q-24).
2
To order MIL-STD-883, Class B processed parts, add/883B to part number.
Contact your local sales office for military data sheet.
3
E = Leadless Ceramic Chip Carrier; N = Plastic DIP; P = Plastic Leaded Chip
Carrier; Q = Cerdip.
(VDD = +10.8 V to +16.5 V, VREFA = VREFB = +10 V; IOUTA = AGNDA = 0 V, IOUTB = AGNDB = 0 V.)