© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 5
1Publication Order Number:
MBRD5H100/D
MBRD5H100T4G,
NBRD5H100T4G
SWITCHMODE
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
•Guardring for Stress Protection
•Low Forward Voltage
•175°C Operating Junction Temperature
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Short Heat Sink Tab Manufactured − Not Sheared!
•NBRD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•All Packages are Pb−Free*
Mechanical Characteristics:
•Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
•Weight: 0.4 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Device Meets MSL1 Requirements
•ESD Ratings:
♦Machine Model = C (> 400 V)
♦Human Body Model = 3B (> 8000 V)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIER
5 AMPERES, 100 VOLTS
http://onsemi.com
MARKING DIAGRAM
DPAK
CASE 369C
YWW
B
5100G
Y = Year
WW = Work Week
B5100 = Device Code
G = Pb−Free Package
1
3
4
(Pin 1: No Connect)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
MBRD5H100T4G DPAK
(Pb−Free)
2,500 /
Tape & Reel
NBRD5H100T4G DPAK
(Pb−Free)
2,500 /
Tape & Reel
MBRD5H100T4G, NBRD5H100T4G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(Rated VR) TC = 171°C
IF(AV) 5
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 171°C
IFRM 10
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 105
A
Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg −65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
RqJC
RqJA
1.6
95.8
°C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 5 A, TJ = 25°C)
(IF = 5 A, TJ = 125°C)
VF0.71
0.60
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
IR4.5
3.5
mA
mA
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
MBRD5H100T4G, NBRD5H100T4G
http://onsemi.com
3
IF, INSTANTANEOUS FORWARD CURRENT (A)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
125°C
150°C
25°C
Figure 1. Typical Forward Voltage
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
125°C
150°C
25°C
Figure 2. Maximum Forward Voltage
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Ir, REVERSE CURRENT (mA)
0.00001
0.0001
0.001
0.01
0.1
1
10
0102030405060708090100
25°C
125°C
150°C
0.0001
0.001
0.01
0.1
1
10
100
0102030405060708090100
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
VR, REVERSE VOLTAGE (V)
Ir, REVERSE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
125°C
150°C
25°C
0 20406080100
0
200
400
600
800
1000
1200
TJ = 25°C
f = 1 MHz
C, CAPACITANCE (pF)
Figure 5. Typical Capacitance
VR, REVERSE VOLTAGE (V)
160
TC, CASE TEMPERATURE (°C)
8
7
5
6
4
IF(AV) , AVERAGE FORWARD CURRENT (A)
3
2
1
145 150 155 180
0
Figure 6. Current Derating, Case
9
10
Square
165 170 175
dc RqJC = 1.6 °C/W
MBRD5H100T4G, NBRD5H100T4G
http://onsemi.com
4
TA, AMBIENT TEMPERATURE (°C)
120 1800
2
1
014020 60 80
3
5
IF(AV) , AVERAGE FORWARD CURRENT (A)
Figure 7. Current Derating, Ambient
dc
Square Wave
0.10.00001
PULSE TIME (s)
100
10
0.1
0.01
0.001
0.0001 0.001 0.01 1.0 10 1000.000001
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
1000
10 1505 20
4
2
0
6
8
10
12
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 8. Forward Power Dissipation
Square Wave
dc
PF(AV) , AVERAGE POWER DISSIPATION (W)
R(t) (C/W)
Figure 9. Thermal Response, Junction−to−Case
1.0
4
40 100 160
14
16
18
20
22
RqJA = 95.8 °C/W
MBRD5H100T4G, NBRD5H100T4G
http://onsemi.com
5
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
MBRD5H100/D
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