2SB1403
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
3.0 kΩ
(Typ) 180 Ω
(Typ)
1
2
3
I
D
123
1. Base
2. Collector
3. Emitter
TO-220FM
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Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO –120 V
Collector to emitter voltage VCEO –120 V
Emitter to base voltage VEBO –7 V
Collector current IC–6 A
Collector peak current IC(peak) –12 A
Collector power dissipation PC2W
P
C
*
125
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*16A
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO –120 — — V IC = –0.1 mA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO –120 — — V IC = –25 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO –7 — — V IE = –50 mA, IC = 0
Collector cutoff current ICBO — — –10 µAV
CB = –100 V, IE = 0
ICEO — — –10 VCE = –100 V, RBE = ∞
DC current transfer ratio hFE 1000 — 20000 VCE = –3 V, IC = –3 A*1
Collector to emitter saturation
voltage VCE(sat)1 — — –1.5 V IC = –3 A, IB = –6 mA*1
VCE(sat)2 — — –3.0 IC = –6 A, IB = –60 mA*1
Base to emitter saturation
voltage VBE(sat)1 — — –2.0 V IC = –3 A, IB = –6 mA*1
VBE(sat)2 — — –3.5 IC = –6 A, IB = –60 mA*1
C to E diode forward voltage VD— — 3.0 V ID = 6 A*1
Note: 1. Pulse test.
See switching characteristic curve of 2SB1106.
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Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
–20
–10
–5
–2
–1.0
–0.5
–0.2
–0.1
–0.05
–0.02
Collector current IC (A)
–10 –300–3 –30 –100
Collector to emitter voltage VCE (V)
Ta = 25°C
1 Shot Pulse
iC(peak)
1 µs
IC(max)
DC Operation(T
C
= 25°C)
PW = 10 ms
1 ms
100 µs
Area of Safe Operation
IB = 0
P
C
= 25 W
–0.5 mA
–1.0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–4.5
–5.0
–10
–8
–6
–4
–2
0–1
Collector current IC (A)
–2
Collector to emitter voltage VCE (V)
–3 –5–4
Typical Output Characteristics 10000
3000
1000
300
100
–0.1 –0.3
DC current transfer ratio hFE
–1.0
Collector current IC (A)
–3 –10
Ta = 75°C
–25°C
25°C
VCE = –3 V
DC Current Transfer Ratio vs.
Collector Current
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Saturation Voltage vs.
Collector Current
TC = 25°C
–10
–3
–1.0
–0.3
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter sauration voltage VBE(sat) (V)
–0.1
–0.1 –0.3
Collector current IC (A)
–3–1.0 –10
VBE(sat)
VCE(sat) IC/IB = 200
500
200
Transient Thermal Resistance
TC = 25°C
Time t (s)
10
3
1.0
0.3
0.1
Thermal resistance θj-c (°C/W)
1 m 10 m 100 m 1.0 10 100 1000
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Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
2SB1403
6
Hitachi, Ltd.
Semiconductor & IC Div.
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Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
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U S A
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