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2Revision: 02-Jun-08
70TPS.. High Voltage Series
Vishay High Power Products Phase Control SCR, 70 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 82 °C, 180° conduction half sine wave 70
A
Maximum continuous RMS on-state
current as AC switch IT(RMS) Lead current limitation 75
Maximum peak, one-cycle
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied
Initial TJ = TJ
maximum
1200
10 ms sine pulse, no voltage reapplied 1400
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 7200 A2s
10 ms sine pulse, no voltage reapplied 10 200
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 102 000 A2√s
Low level value of threshold voltage VT(TO)1
TJ = 125 °C
0.916 V
High level value of threshold voltage VT(TO)2 1.21
Low level value of on-state slope resistance rt1 4.138 mΩ
High level value of on-state slope resistance rt2 3.43
Maximum peak on-state voltage VTM 100 A, TJ = 25 °C 1.4 V
Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 150 A/µs
Maximum holding current IHTJ = 25 °C 200
mA
Maximum latching current IL400
Maximum reverse and direct leakage current IRRM/IDRM
TJ = 25 °C
VR = Rated VRRM/VDRM
1.0
TJ = 125 °C 15
Maximum rate of rise of off-state voltage dV/dt TJ = 125 °C 500 V/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM T = 30 µs 10 W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative gate voltage - VGM 10
V
Maximum required DC gate
voltage to trigger VGT
TJ = - 40 °C
Anode supply = 6 V resistive load
4.0
TJ = 25 °C 1.5
TJ = 125 °C 1.1
Maximum required DC gate current to trigger IGT
TJ = - 40 °C 270
mATJ = 25 °C 100
TJ = 125 °C 80
Maximum DC gate voltage not to trigger VGD TJ = 120 °C, VDRM = Rated value 0.25 V
Maximum DC gate current not to trigger IGD 6mA