2N2484UB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: * General purpose * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2484UBJ) * JANTX level (2N2484UBJX) * JANTXV level (2N2484UBJV) * JANS level (2N2484UBJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features * Radiation testing (total dose) upon request * * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0307 Reference document: MIL-PRF-19500/376 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 60 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 50 mA Power Dissipation, TA = 25C Derate linearly above 25C PT 360 2.06 RJA 325 mW mW/C C/W TJ -65 to +200 C TSTG -65 to +200 C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2010 Rev. F SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N2484UB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO ICES IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 60 Volts VCB = 45 Volts VCB = 45 Volts, TA = 150C VCE = 5 Volts VCE = 45 Volts VEB = 6 Volts VEB = 5 Volts On Characteristics Typ Max 10 5 10 2 5 10 2 Units Volts A nA A nA nA A nA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE7 DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio VBE VCEsat1 Symbol |hFE|1 |hFE|2 hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Noise Figure NF1 NF2 NF3 Noise Figure (wideband) NF4 Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit Rev Volt Transfer Ratio hie hoe hre Copyright 2010 Rev. F Min 60 Test Conditions IC = 1 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 500 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 10 A, VCE = 5 Volts TA = -55C VCE = 5 Volts, 100 A IC = 1 mA, IB = 100 A Min Test Conditions VCE = 5 Volts, IC = 50 A, f = 5 MHz VCE = 5 Volts, IC = 500 A, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 A, Rg = 10 k f = 100 Hz f = 1 kHz f = 10 kHz VCE = 5 Volts, IC = 10 A, Rg = 10 k, 10Hz < Noise BW <15.7kHz Min VCB = 5V, IC = 1mA, f = 1kHz 3.5 Typ 45 200 225 250 250 225 35 Max Units 500 675 800 800 800 0.5 Typ 0.7 0.3 Volts Volts Max Units 3 2 7 250 900 5 pF 6 pF 7.5 3 2 dB 3 dB 24 40 8x10-4 k mhos SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2