BSS123W-7-F - Diodes - Datasheet.Directory

BSS123W

Document number: DS30368 Rev. 9 - 2 1 of 5

www.diodes.com April 2011

BSS123W

N-CHANNEL ENHAN CEMENT MODE MOSFET

Features

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• High Drain-Source Voltage Rating

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Notes 2 & 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT323

• Case Material: Molded Plastic, "Green" Molding Compound,

Note 3. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Notes 3 & 4)

Part Number Case Packaging

BSS123W-7-F SOT323 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code N P R S T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT323

Top View Equivalent Circuit Top View

Source

Gate

Drain

K23 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: N = 2002)

M = Month (ex: 9 = September)

K23

BSS123W

Document number: DS30368 Rev. 9 - 2 2 of 5

www.diodes.com April 2011

BSS123W

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 100 V

Drain-Gate Voltage RGS ≤ 20KΩ V

DGR 100 V

Gate-Source Voltage Continuous VGSS ±20 V

Drain Current (Note 5) Continuous

Pulsed ID

IDM 170

680 mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) PD 200 mW

Thermal Resistance, Junction to Ambient (Note 5) R

JA 625 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 100 ⎯ ⎯ V VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0

10 µA

nA VDS = 100V, VGS = 0V

VDS = 20V, VGS = 0V

Gate-Body Leakage, Forward IGSSF ⎯ ⎯ 50 nA VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

)

0.8 1.4 2.0 V VDS = VGS, ID = 1mA

Static Drain-Source On-Resistance RDS (ON) ⎯

⎯ ⎯

⎯ 6.0

10 Ω VGS = 10V, ID = 0.17A

VGS = 4.5V, ID = 0.17A

Forward Transconductance gFS 80 370 ⎯ mS VDS = 10V, ID = 0.17A, f = 1.0KHz

Drain-Source Diode Forward Voltage VSD ⎯ 0.84 1.3 V

VGS = 0V, IS = 0.34A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss ⎯ 29 60 pF VDS = 25V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss ⎯ 10 15 pF

Reverse Transfer Capacitance Crss ⎯ 2 6 pF

SWITCHING CHARACTERISTICS

Turn-On Rise Time t

⎯ ⎯ 8 ns VDD = 30V, ID = 0.28A,

RGEN = 50Ω, VGS = 10V

Turn-Off Fall Time tf ⎯ ⎯ 16 ns

Turn-On Delay Time tD

(

)

⎯ ⎯ 8 ns

Turn-Off Delay Time tD

(

OFF

)

⎯ ⎯ 13 ns

Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

BSS123W

Document number: DS30368 Rev. 9 - 2 3 of 5

www.diodes.com April 2011

BSS123W

0.2

0.7

01345

I, D

-S

(A)

V , DRA IN- SOURCE V OLTAGE (V)

Fig. 1 On-Region Characteristics

0.6

0.5

0.1

0.3

0.4

0.8

1.2

1.6

0.1 0.2

, N

MALIZED

DRAIN-SOURCE ON-RESISTANCE

DS(ON)

I , DRAIN-SOURCE CURRENT (A)

Fig. 2 On-Resistance Variation with Gate V oltage

and Drain-S ource Cu r r ent

2.0

2.4

0.3 0.4 0.5 0.6

0.7

0.8

0.9

-50 0 75 100 125 150

V N

MALIZED

LD V

GS(th),

T , JUNCTION TEMPERATURE (ºC)

Fig. 3 Gate Threshold Variation with Temperature

1.1

1.2

-25 25 50

V = V

I = 250A

DS GS

0.4

0.8

1.2

-50 075 100 125 150

MALIZED

N-

ESIS

DS(ON),

T , JUNCTION TEMPERATURE (ºC)

Fig. 4 On-Resistance V ariation with Temperature

1.6

1.8

2.2

-25 25 50

0.6

1.4

0515 20 25

E (p

)

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 5 Typical Capacitance

100

100 200

DISSI

(mW)

T , AMBIENT TEMPERA TURE (°C)

Fig. 6 Power Derating Curve, Total Package

150

200

250

BSS123W

Document number: DS30368 Rev. 9 - 2 4 of 5

www.diodes.com April 2011

BSS123W

Package Outline Dimensions

Suggested Pad Layout

SOT323

Dim Min Max Typ

A 0.25 0.40 0.30

B 1.15 1.35 1.30

C 2.00 2.20 2.10

D - - 0.65

G 1.20 1.40 1.30

H 1.80 2.20 2.15

J 0.0 0.10 0.05

K 0.90 1.00 1.00

L 0.25 0.40 0.30

M 0.10 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.8

X 0.7

Y 0.9

C 1.9

E 1.0

BSS123W

Document number: DS30368 Rev. 9 - 2 5 of 5

www.diodes.com April 2011

BSS123W

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