SILICON FAST RECOVERY RECTIFYING DIODES @ 200-~1600V SM-1XH! @1.0A~0.2A SR HL a @trrs0.4us Sy) @8E 1. Whitey Fo5mm B&2.4mm CHC S, e FEATURES / AF-(F 2, BREST. VIR UANU 947, |, Compact body. Minimum! mounting pitch 5mm, height 2.4mn OF |. SEE. 2. Fast recovery soft recovery type. e APPLICATION 1. High frequency rectification. @xw (Ta=25C) Characteristics(Ta = 25C, unless otherwise specified) bE o - < re H ae) te | Tyne smM- |SsM- |SM- |SM- |SM- [SM J Items Symbols) Unit Conditions 1XH02 | 1XHO4 | 1XHO6 | 1XHO08 | 1XH12 | 1XH16 ir e = + A Ee Vr Vv 200 400 600 800 1200 1600 o @ E Ta=50C 50Hz IF 4-F , r EH ER Et To A ce 1.0 0.8 0.6 0.2 r oO a 2s Bie i= son Zz A Yb c ke : tA EI >it | Irsu A BR SERGE L 35 30 20 c a c es g|# 4 ee] T | c 40~ +150 5 < CX S| im | Tae | C 40~ +150 c S| ie rf | Ve | V | Ir=To MAX1.1 MAX1.2| MAX1.5| MAX3.5 : ae a as A 2) it - Be Ip HA | Va=VerM MAX10 J ay = Ir=2mA, t=20us os a - MAX0.15 =| @ @ me mM | tr | zs RE OBY. TRIES a & Ir=Ir=0.1A MAX0.4 Lu = Ps ap (a \ o . os = @ Hiatt RA mistt (RAB) eR VLRRHE g + 0 100 2 100 FRC RRAEM Tost & le z lo 100% E $4, = 8 RVAWE (\ 12 i - 30 > REERHOMS. 61 S 3 a0 = s7 | oi eens moat.) o UE NY Tome S = 60 a = Phe ome o 3 N\ & | ae 60 > rT) [__] 5 a0 N\ 0.5 Se T,=50T mH} 5 N\A g xhoe= oe] > fe 3 20 DS z @SM-1XHO8 So ee wu * a. Q@SN-IXHIZ wi 20 a b SM-1XHI6 1 2 5 i020 so] 4 BH 8 Oo sCS*~sSSC<C*~aS*iSCSC**iS .) 12 3 4 5 6 CYCLES at SOHz i i AMBIENT TEMPERATURE T: (C) FORWARD VOLTAGE V;(V) z ri El Aeae ny melee har o ~ 50uF mA el 15V ott > Wt gy 4g @F#7GE Outline (Hifi : mm) _ 02 mA il 7 BS: 0.2 _.| | 5002 L 20usec tv trr BERK (AnH) (ti eH) ny hes AY KR? g - we RS SM-1XHO2 H2 20MIN | nee | 20MIN SM~-1XH04 H4 geano1 | " ' SM-|XHO6 H6 opto SM-|XHO8 H8 SE 1. EJIL KF RBSIS SEMA (UL94V-0) LR > HE. SM-IXHIZ | HI2 2. )KRMBISEEX v +R. __SM-IXHI6 | HIG 3. AVY-KV-27-MS. Oy FSS ORMILRE, L 4. F-EVIRUY K7 4-8 VF OMEAAIS PSM, ) 35