MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOW IRF340 = IRF341 = IRF342 = IRF343 IRF740 = IRF744 = IRF742 IRF743 IRF340 = IRF344 @ IRF342 = IRF343 IRF740 = IRF744 @ IRF742 = IRF743 Siliconix ADOV Seseeanereonerede omen These power FETs are designed especially for offline switching regulators, converters, solenoid and relay drivers. FEATURES Product Summary m High Voltage ean BVoss | tosow lo Peokage = No Second Breakdown umber = High Input Impedance IRF340_ | 400V | oossa =| 108 w Internal Drain-Source Diode IRF341 | 950V 10-3 m Very Rugged: Excellent SOA WaFS42 | 400} son | 8.08 = Extremely Fast Switching IRF343_ | 350V IRF740 400V - 0.552 10A IRF741 350V T0-220AB BENEFITS IRE742 400V oson | BOA a Reduced Component Count IRF743 350V , " a Improved Performance o a Simpler Designs te = Improved Reliability g ae s ABSOLUTE MAXIMUM RATINGS (Tc =25C unless otherwise noted) Drain-Source Voltage Gate Current (Peak) ...0. 00.0. c cece cece cence eens +3A IRF340, 342, 740,742 001 ec eee 400V IRF341, 343, 741,743... 0000000 cece cee seen ees 350V Gate-Source Voltage ....... cece ec cee tenes + 40V j Total Power Dissipation ......... 0... cee cece eens 125W Drain- "RESO 340, 740, T42 ooo occcc cece ccueeentns .... 400V Linear Derating Factor ...0..... 0c ccc eee eee 1.0W/C IRF341, 343, 741,743. 0... eee eee 350V Operating and Drain Current Storage Temperature................. 55C to +150C Continuous IRF340, 341, 740,741 02... eee ee +#10A Notes: RF 342, 343, 742,743 ove eee ene tee + 8A 1. Limited by package dissipation. Pulsed? 00.0. tenes +40A 2. Pulse test 80ys to 300us, 1% duty cycle. oss 0.450 (11.43) ans Law =~ 6250 76.35) om (0. 20 0.135 wax max ee oe a5 : oe gay (3.429) : (6.88) | T 0 0.043 (1.092) | aape) I | SEATING ~~ 0038 70.965) AAA PLANE 1197 daa + 8 a 0.675 117,145) | 1177 (29.896) ott (en EL 685 76.637) (6.35) s 0.188 MAX . 4 7 . GOTH ENDS i , _____ os 9 caso 117176) 1 fy ? ao 8 - | 0420 110.668) YY 0 1 a - ; == ~ 0.161 14.089) ' ats em o.05 0.151 (3.835) 10 G50 _,| 045 (1.15) _ 0205" (5.207) portom view (73.335) BMAX M35 (5-42) seo 1030) . TO.3 [* "eso (1651) Pin 1 Gate Pin 1 Gate Pin 2 Source TO-3 Pin 2 & TAB Drain TO-220AB CASE Drain Pin 3 Source 2-22 Siliconix ELECTRICAL CHARACTERISTICS (Ic =25C unless otherwise noted) yiaal = @yZddl = byZadl = Oda Part . tg Parameter Number Min | Typ | Max | Unit Test Conditions Static : rsa 72 | so BV Drain-Source Breakdown ' Vv Ves = 0, Ip = 280uA SS Voltage IRF341, 741 | 3.0 gee IRF343, 743 Vesith) Gate Threshold Voltage All 2.0 3.3 4.0 Vv Vos= Ves, Ilp=1mA less Gate-Body Leakage All 10 +100 | nA Ves = + 20V, Vpg=0 , tn Zero Gate Voltage Drain . 0.1 | 0.25 Vps= Rated Vps, Veg = 0V loss Current All mA = u 0.2 1.0 Vos = Rated Vpg, Veg = OV, Te = 125C IRF340, 341 | 44 , | On-State Drain C t perso, 7a A V 25V, V, 10V (Note 1) n-State Drain Curren . = 25V, = ote Pron) IRF342, 343 | os $s tRF742, 743 . IRF340, 341 0.47 | 0.55 Static Drain-Source On-State IRF740, 741 Tosion) \ 9: Vas = 10V, Ip = 5A (Note 1) Resistance IRF342, 343 0.68 | 0.80 IRF742, 743 : , Dynamic Ors Forward Transconductance All 4.0 7.0 Ss Vos = 25V, Ip = 5A (Note 1) Ciss Input Capacitance 1250 | 1600 Coss Output Capacitance All 300 | 450 PF | Veg=0, Vog = 25V, f= 1 MHz Crss Reverse Transfer Capacitance 80 150 taion) Turn-On Delay Time All 17 35 t Rise Time All 5.0 16 - ns Vop = 175V, Ip = 5A, RL =35Q, Rg = 102 tary Turn-Off Delay Time All 45 90 tr Fait Time All 16 35 Drain-Source Diode Characteristics Vsp Forward On Voltage All -2.0 Vv Ig = -10A Veg = 0 (Note 1) tr Reverse Recovery Time Alt 600 ns Ip =10A, Veg =0, difdt = 100A/us Note 1: Pulse test 80 us to 300 us, 1% duty cycle TEST CIRCUITS FIGURE 2 Reverse Recovery Test Circuit FIGURE 1 Switching Test Circuit \AN? 500 di/dt Adjust (1 - 27 yi) * 5 TO 50uF 7 IN4933 TT. '(pKyAdjust . r 7 | 2 + | | v, 5 2402 t | Rgen | ouT + IN4001 | 4000uF Se >} - 4 | 20v" | | R$ 0.259 | | L$ 0.01uH cIRCUIT = A | ise | | Gnber | + > -} WA [GENERATOR | Test _I 1N4723 | 2N4204 PW. = Tus Cg < 50 pF _Yy , SCOPE UTY CYCLE = 1% FROM TRIGGER CKT : Siliconix 2-23 eveidl = Zyesdl = bvesdl = Ovesal