NTH4302 Product Preview HD3e Quad N-Channel The NTH4302 is the first integrated Quad FET in a single package. It is the integration of 4 planar TMOS devices. It uses the latest HD3e TMOS technology from ON Semiconductor, with very high cell density and improved switching capability The NTH4302 is a 16-pin leadless device packaged in the new PInPAK from ON Semiconductor. The PInPAK is a new flexible power package that uses the MAP process. The NTH4302 uses the same MOSFET as the NTD60N02R. However, with the PInPAK package, various other pairs of MOSFETs can be used to create additional custom applications. Features * Ultra Low RDS(on) Provides Higher Efficiency * Very Fast Switching due to Planar Technology and Leadless Package * 200% Footprint Reduction Compared to Similar DPAK Solution for * * * the Same Power Up to 80 Amp per FET Very Low Vf (0.8 mV) Ideal for Synchronous Rectification Specifically Designed for DC-DC Buck Converter in VRM9.1 Application (80 Amp Per Phase, 500 khz) http://onsemi.com QUAD TMOS POWER MOSFET 40 AMPERES 24 VOLTS RDS(on) = 7.5 m Ciss = 2050 pF RJC = 1.3 C/W MARKING DIAGRAM TBD CASE TBD PInPAK Application * * * * * DC-DC Converter Motherboard/Server Buck Converter Telecom/Industrial Power Supply Automotive Motor Drive H-Bridge xx A WL, L YY, Y WW, W = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week PINOUT DIAGRAM Application Note AND8086/D, "Board Mounting Notes for Quad Flat-Pack No-Lead Package (QFN)", is available on our web site www.onsemi.com. TBD ORDERING INFORMATION Device NTH4301 Package Shipping ONiPAK TBD This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2003 January, 2003 - Rev. 0 1 Publication Order Number: NTH4301/D NTH4302 VCCC VCCC VCC D1 D2 D1 G2 G1 G1 S1 S2 S1 M Out D2 D4 D3 G4 G3 D2 S2 S4 S3 Figure 1. MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS 24 Vdc Drain-to-Gate Voltage VDGR 24 Vdc VGS 20 Vdc TJ and Tstg -55 to 150 C EAS 450 mJ ID ID Adc IDM 30 TBD TBD PD @ TA = 25C TBD W mW/C RJC RJA RJA 1.5 30 TBD C/W Rating Gate-to-Source Voltage Operating and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (Note 1) (VDD = 25 Vdc, VGS = 5 Vdc, L = 0.1 mH, IL(pk) = 20 A, Rg = 1 K) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 70C - Single Pulse (tp 10 s) Total Power Dissipation, t 10 seconds Linear Derating Factor Thermal Resistance - Junction-to-Case - Junction-to-Ambient - Junction-to-Ambient (Note 1) 1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). http://onsemi.com 2 NTH4302 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 24 - 25 - - - 1.0 10 - - 100 1.0 - 1.9 -3.8 3.0 - - 0.0078 0.0078 0.010 0.010 0.010 0.013 gFS - 20 - Mhos Ciss - 2050 2400 pF Coss - 640 800 Crss - 225 310 td(on) - 11 20 OFF CHARACTERISTICS V(BR)DSS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 A) Positive Temperature Coefficient Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = 30 Vdc, TJ = 125C) IDSS Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/C Adc nAdc ON CHARACTERISTICS VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Negative Threshold Temperature Coefficient Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 10 Adc) (VGS = 4.5 Vdc, ID = 5.0 Adc) Vdc RDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 24 Vdc, Vd VGS = 0 Vdc, Vd f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Of f Delay Time (VDD = 25 Vdc, ID = 1.0 Vdc, VGS = 10 Adc, RG = 6.0 ) Fall Time Turn-On Delay Time Rise Time Turn-Of f Delay Time (VDD = 25 Vdc, ID = 1.0 Vdc, VGS = 10 Adc, RG = 2.5 ) Fall Time Turn-On Delay Time Rise Time Turn-Of f Delay Time (VDD = 24 Vdc, ID = 20 Vdc, VGS = 10 Adc, RG = 2.5 ) Fall Time Gate Charge g (VDS = 24 Vdc, Vd ID = 2.0 2 0 Adc, Ad VGS = 10 Vdc) tr - 15 25 td(off) - 85 130 tf - 55 90 td(on) - 11 20 tr - 13 20 td(off) - 55 90 tf - 40 75 td(on) - 15 - tr - 25 - td(off) - 40 - tf - 58 - QT - 55 80 Qgs (Q1) - 5.5 - Qgd (Q2) - 15 - - 0.75 0 75 0.90 0.65 1.0 1 0 - trr - 30 65 ta - 20 - tb - 19 - Qrr - 0.043 - ns ns ns nC BODY-DRAIN DIODE RATINGS (Note 3) ode Forward o a d On-Voltage O o age Diode (IS = 2.3 2 3 Adc, Ad VGS = 0 Vd Vdc)) (IS = 20 Adc, VGS = 0 Vdc) (IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125C) VSD Reverse Recovery y Time (IS = 2.3 2 3 Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/s) Reverse Recovery Stored Charge 2. Switching characteristics are independent of operating junction temperature. 3. Indicates Pulse Test: Pulse Width 300 sec max, Duty Cycle 2%. http://onsemi.com 3 Vdc dc ns C NTH4302 120 VGS = 10 V 80 VDS 10 V VGS = 4.5 V VGS = 8.0 V VGS = 6.0 V 100 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 120 VGS = 4.0 V VGS = 5.5 V VGS = 5.0 V 60 VGS = 3.5 V 40 VGS = 3.0 V 20 80 60 40 TJ = 25C 20 VGS = 2.5 V 0 0 2 4 6 8 TJ = 150C 10 0 1 0.02 TJ = 150C 0.012 TJ = 25C TJ = -55C 0.004 10 20 30 40 50 60 70 80 90 100 110 120 RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0.024 6 5 0.028 VGS = 4.5 V 0.024 0.02 TJ = 150C TJ = 125C 0.016 TJ = 25C 0.012 TJ = -55C 0.008 0.004 10 20 30 40 50 60 70 80 90 100 110 120 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 4. On-Resistance versus Drain Current and Temperature Figure 5. On-Resistance versus Drain Current and Temperature 10000 1.8 1.6 ID = 30 A VGS = 4.5 V and 10 V TJ = 150C IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE () VGS = 10 V TJ = 125C 3 Figure 3. Transfer Characteristics 0.028 0.008 2 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2. On-Region Characteristics 0.016 TJ = -55C 0 1.4 1.2 1.0 1000 TJ = 125C 100 TJ = 100C 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6. On-Resistance Variation with Temperature Figure 7. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 25 NTH4302 2000 10 VDS = 0 V VGS = 0 V TJ = 25C VGS, GATE-T O-SOURCE (V) Ciss C, CAPACITANCE (pF) 1600 1200 Ciss Crss 800 Coss 400 Crss 0 -10 -5 VGS 0 VDS 5 10 15 VGS 6 QT Q2 Q1 4 2 0 20 ID = 30 A TJ = 25C 0 4 8 12 16 Qg, TOTAL GATE CHARGE (nC) GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 9. Gate-to-Source and Drain-to-Source Voltage versus Total Charge Figure 8. Capacitance Variation 1000 60 IS, SOURCE CURRENT (A) VDS = 10 V ID = 30 A VGS = 10 V t, TIME (ns) 8 100 tr td(off) tf 10 td(on) 50 40 30 20 TJ = 150C 10 TJ = 25C 0 1 1 10 100 0 RG, GATE RESISTANCE () 0.2 0.4 0.6 0.8 1 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 10. Resistive Switching Time Variation versus Gate Resistance Figure 11. Diode Forward Voltage versus Current http://onsemi.com 5 NTH4302 PACKAGE DIMENSIONS PInPAK CASE TBD ISSUE O PInPAK is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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