Semiconductor Components Industries, LLC, 2003
January, 2003 - Rev. 0 1Publication Order Number:
NTH4301/D
NTH4302
Product Preview
HD3e Quad N−Channel
The NTH4302 is the first integrated Quad FET in a single package.
It is the integration of 4 planar TMOS devices. It uses the latest HD3e
TMOS technology from ON Semiconductor, with very high cell
density and improved switching capability
The NTH4302 is a 16-pin leadless device packaged in the new
PInPAK from ON Semiconductor. The PInPAK is a new flexible
power package that uses the MAP process. The NTH4302 uses the
same MOSFET as the NTD60N02R. However, with the PInPAK
package, various other pairs of MOSFETs can be used to create
additional custom applications.
Features
•Ultra Low RDS(on) Provides Higher Efficiency
•Very Fast Switching due to Planar Technology and Leadless Package
•200% Footprint Reduction Compared to Similar DPAK Solution for
the Same Power
•Up to 80 Amp per FET
•Very Low Vf (0.8 mV) Ideal for Synchronous Rectification
•Specifically Designed for DC-DC Buck Converter in VRM9.1
Application (80 Amp Per Phase, 500 khz)
Application
•DC-DC Converter
•Motherboard/Server Buck Converter
•Telecom/Industrial Power Supply
•Automotive Motor Drive
•H-Bridge
Application Note AND8086/D, “Board Mounting Notes for Quad Flat-Pack
No-Lead Package (QFN)”, is available on our web site www.onsemi.com.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
QUAD TMOS POWER MOSFET
40 AMPERES
24 VOLTS
RDS(on) = 7.5 m
Ciss = 2050 pF
RJC = 1.3 C/W
PINOUT DIAGRAM
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Device Package Shipping
ORDERING INFORMATION
NTH4301 ONiPAK TBD
CASE TBD
PInPAK
TBD
TBD
xx = Specific Device Code
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
MARKING
DIAGRAM
NTH4302
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2
G1
D1
S1
VCC
G3
D3
S3
M
G2
D2
S2
VCCC
G4
D4
S4
G1
D1
S1
VCCC
D2
D2
S2
Out
Figure 1.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 24 Vdc
Drain-to-Gate Voltage VDGR 24 Vdc
Gate-to-Source Voltage VGS ±20 Vdc
Operating and Storage Temperature TJ and Tstg -55 to 150 °C
Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (Note 1)
(VDD = 25 Vdc, VGS = 5 Vdc, L = 0.1 mH, IL(pk) = 20 A, Rg = 1 K)EAS 450 mJ
Drain Current - Continuous @ TA = 25°C
- Continuous @ TA = 70°C
- Single Pulse (tp 10 s)
ID
ID
IDM
30
TBD
TBD
Adc
Total Power Dissipation, t 10 seconds
Linear Derating Factor PD @ TA = 25°CTBD W
mW/°C
Thermal Resistance - Junction-to-Case
- Junction-to-Ambient
- Junction-to-Ambient (Note 1)
RθJC
RθJA
RθJA
1.5
30
TBD
°C/W
1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2).
NTH4302
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 A)
Positive Temperature Coefficient
V(BR)DSS 24
--
25 -
-
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 125°C)
IDSS -
--
-1.0
10
Adc
Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS - - ±100 nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Negative Threshold Temperature Coefficient
VGS(th) 1.0
-1.9
-3.8 3.0
-
Vdc
Static Drain-to-Source On-Resistance
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on) -
-
-
0.0078
0.0078
0.010
0.010
0.010
0.013
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) gFS - 20 - Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 24 Vd V 0Vd
Ciss - 2050 2400 pF
Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
)
Coss - 640 800
Reverse Transfer Capacitance
f
=
1
.
0
MHz)
Crss - 225 310
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time td(on) -11 20 ns
Rise Time
(
V
DD
= 25 Vdc, I
D
= 1.0 Vdc, tr- 15 25
Turn-Off Delay Time
(VDD
=
25
Vdc
,
ID
=
1
.
0
Vdc
,
VGS = 10 Adc, RG = 6.0 )td(off) - 85 130
Fall Time tf- 55 90
Turn-On Delay Time td(on) -11 20 ns
Rise Time (VDD = 25 Vdc, ID = 1.0 Vdc, tr- 13 20
Turn-Off Delay Time
(VDD
=
25
Vdc
,
ID
=
1
.
0
Vdc
,
VGS = 10 Adc, RG = 2.5 )td(off) - 55 90
Fall Time tf- 40 75
Turn-On Delay Time td(on) - 15 - ns
Rise Time (VDD = 24 Vdc, ID = 20 Vdc, tr- 25 -
Turn-Off Delay Time
(VDD
=
24
Vdc
,
ID
=
20
Vdc
,
VGS = 10 Adc, RG = 2.5 )td(off) - 40 -
Fall Time tf- 58 -
Gate Charge
(V 24 Vd I 20Ad
QT- 55 80 nC
g
(VDS = 24 Vdc, ID = 2.0 Adc,
V
GS
= 10 Vdc
)
Qgs (Q1) - 5.5 -
VGS
=
10
Vdc)
Qgd (Q2) - 15 -
BODY-DRAIN DIODE RATINGS (Note 3)
Diode Forward On-Voltage
(I 23Ad V 0Vd )
VSD
075
10
Vdc
ode o a d O o age
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS
=
20 Adc, VGS
=
0 Vdc)
SD
-
-0.75
0.90
1.0
-
dc
(I
S =
20
Adc
,
V
GS =
0
Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C) -
-
0
.
90
0.65 -
-
Reverse Recovery Time
(I 23Ad V 0Vd
trr - 30 65 ns
y
(IS = 2.3 Adc, VGS = 0 Vdc,
dI
S
/dt = 100 A/
s
)
ta- 20 -
dIS/dt
=
100
A/s)
tb- 19 -
Reverse Recovery Stored Charge Qrr - 0.043 - C
2. Switching characteristics are independent of operating junction temperature.
3. Indicates Pulse Test: Pulse Width 300 sec max, Duty Cycle 2%.
NTH4302
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0
20
40
60
80
100
120
0246810
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2. On-Region Characteristics
ID, DRAIN CURRENT (A)
0.004
0.008
0.012
0.016
0.02
0.024
0.028
10 20 30 40 50 60 70 80 90 100 110 120
RDS(on), DRAIN-TO-SOURCE RESISTANCE ()
Figure 3. Transfer Characteristics
Figure 4. On-Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (A)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TJ = 150°C
TJ = 125°CTJ = 25°C
TJ = -55°C
VGS = 10 V
0.004
0.008
0.012
0.016
0.02
0.024
0.028
10 20 30 40 50 60 70 80 90 100 110 120
TJ = 25°C
TJ = -55°C
TJ = 150°CTJ = 125°C
VGS = 4.5 V
Figure 5. On-Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (A)
RDS(on), DRAIN-TO-SOURCE RESISTANCE ()
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
Figure 6. On-Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
10
100
1000
10000
0 5 10 15 20 2
5
Figure 7. Drain-to-Source Leakage Current
versus Voltage
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
TJ = 100°C
TJ = 150°C
TJ = 125°C
0
20
40
60
80
100
120
0123 5
6
TJ = -55°C
TJ = 25°C
TJ = 150°C
VGS = 4.5 V
VGS = 10 V
VGS = 4.0 V
VGS = 6.0 V
VGS = 5.5 V
VGS = 8.0 V
VGS = 5.0 V
VGS = 3.5 V
VGS = 3.0 V
VGS = 2.5 V
VDS 10 V
ID = 30 A
VGS = 4.5 V and 10 V
NTH4302
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5
0
400
800
1200
1600
2000
-10 -5 0 5 10 15 20
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE
(V)
Figure 8. Capacitance Variation
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
Ciss VDS = 0 V
Crss
VGS VDS
0
2
4
6
8
10
0 4 8 12 16
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate-to-Source and Drain-to-Source
Voltage versus Total Charge
Q1Q2
QT
VGS
ID = 30 A
TJ = 25°C
1
10
100
1000
1 10 100
RG, GATE RESISTANCE ()
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
t, TIME (ns)
VDS = 10 V
ID = 30 A
VGS = 10 V
0
10
20
30
40
50
60
0 0.2 0.4 0.6 0.8 1
Figure 11. Diode Forward Voltage versus
Current
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
IS, SOURCE CURRENT (A)
TJ = 25°C
TJ = 150°C
tr
td(off)
tf
td(on)
VGS, GATE-T O-SOURCE (V)
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PACKAGE DIMENSIONS
PInPAK
CASE TBD
ISSUE O
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
NTH4301/D
PInPAK is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).
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