A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifications are sub
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ect to chan
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e without notice.
CHARACTERISTICS TC = 25°C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCER IC = 25 Ma RBE = 10 Ω 65
V
BVCBO IC = 10 mA 65 V
BVEBO IE = 1.0 mA 3.5 V
ICES VCE = 50 V 10 mA
hFE VCE = 5.0 V IC = 100 mA 5.0 ---
POUT
GP
VCE = 50 V PIN = 13.5 W f = 1025 to 1150 MHz
PULSE WIDTH = 10 μS DUTY CYCLE = 1.0%
90
8.4
W
dB
NPN SILICON RF POWER TRANSISTOR
ASI SD1536-08
DESCRIPTION:
The ASI SD1536-08 is a Common
Base Device Designed for DME IFF,
and TACAN Pulse Applications.
FEATURES INCLUDE:
• Gold Metallization
• Internal Impedance Matching
• Broad Band Performance
MAXIMUM RATINGS
IC 10 A
VCES 65 V
PDISS 292 W @ TC = 25 °C
TJ -55 °C to +200 °C
TSTG -55 °C to +150 °C
θJC 0.60 °C/W
PACKAGE STYLE .250 SQ 2L FL
1 = COLLECTOR 2 = EMITTER 3 = BASE
1
2
3
