MRFX600H MRFX600HS MRFX600GS
1
RF Device Data
NXP Semiconductors
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design supports frequency use from 1.8 to
400 MHz.
Typical Performance
Frequency
(MHz) Signal Type
VDD
(V)
Pout
(W)
Gps
(dB)
D
(%)
87.5–108 (1,2) CW 62 680 CW 21.3 83.0
230 (3) Pulse
(100 sec, 20% Duty Cycle)
65 600 Peak 26.4 74.4
Load Mismatch/Ruggedness
Frequency
(MHz) Signal Type VSWR
Pin
(W)
Test
Voltage Result
230 (3) Pulse
(100 sec, 20%
Duty Cycle)
> 65:1 at all
Phase Angles
2.5 Peak
(3 dB
Overdrive)
65 No Device
Degradation
1. Measured in 87.5–108 MHz broadband reference circuit (page 5).
2. The values shown are the center band performance numbers across the indicated
frequency range.
3. Measured in 230 MHz production test fixture (page 10).
Features
Unmatched input and output allowing wide frequency range utilization
Output impedance fits a 4:1 transformer
Device can be used single--ended or in a push--pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for extended power range
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
Mobile radio
– HF and VHF communications
– PMR base stations
Document Number: MRFX600H
Rev. 0, 09/2018
NXP Semiconductors
Technical Data
1.8–400 MHz, 600 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
MRFX600H
MRFX600HS
MRFX600GS
NI--780S--4L
MRFX600HS
NI--780H--4L
MRFX600H
NI--780GS--4L
MRFX600GS
Figure 1. Pin Connections
(Top View)
Drain A
31
42
Drain B
Gate A
Gate B
Note: The backside of the package is the
source terminal for the transistor.
2018 NXP B.V.
2
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +179 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Storage Temperature Range Tstg –65to+150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD1333
6.67
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 75C, 650 W CW, 62 Vdc, IDQ(A+B) = 250 mA, 98 MHz
RJC 0.15 C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 73C, 600 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
65 Vdc, IDQ(A+B) = 100 mA, 230 MHz
ZJC 0.037 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JS--001--2017) Class 2, passes 2500 V
Charge Device Model (per JS--002--2014) Class C3, passes 1000 V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D= 100 mAdc)
V(BR)DSS 179 193 —Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 179 Vdc, VGS =0Vdc)
IDSS — — 100 Adc
On Characteristics
Gate Threshold Voltage (4)
(VDS =10Vdc,I
D= 277 Adc)
VGS(th) 2.1 2.5 2.9 Vdc
Gate Quiescent Voltage
(VDD =65Vdc,I
D= 100 mAdc, Measured in Functional Test)
VGS(Q) 2.7 2.9 3.2 Vdc
Drain--Source On--Voltage (4)
(VGS =10Vdc,I
D=0.74Adc)
VDS(on) —0.2 —Vdc
Forward Transconductance (4)
(VDS =10Vdc,I
D=32Adc)
gfs —33.6 —S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
MRFX600H MRFX600HS MRFX600GS
3
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =65Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —1.1 —pF
Output Capacitance
(VDS =65Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —84 —pF
Input Capacitance
(VDS =65Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —299 —pF
Functional Tests (2) (In NXP Production Test Fixture, 50 ohm system) VDD =65Vdc,I
DQ(A+B) = 100 mA, Pout = 600 W Peak
(120 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain Gps 24.5 26.4 27.5 dB
Drain Efficiency D71.0 74.4 — %
Input Return Loss IRL — –23 –12 dB
Table 5. Load Mismatch/Ruggedness (In NXP Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz) Signal Type VSWR
Pin
(W) Test Voltage, VDD Result
230 Pulse
(100 sec, 20% Duty Cycle)
> 65:1 at all
Phase Angles
2.5 Peak
(3 dB Overdrive)
65 No Device Degradation
Table 6. Ordering Information
Device Tape and Reel Information Package
MRFX600HR5 R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--780H--4L
MRFX600HSR5
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
NI--780S--4L
MRFX600GSR5 NI--780GS--4L
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GS) parts.
4
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
TYPICAL CHARACTERISTICS
1
100
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
10
Note: Each side of device measured separately.
30 40 50
1000
60 70
NORMALIZED VGS(Q)
1.06
1.04
1.02
1
0.98
0.96
0.94
100–50 0–25 25 50 75
0.92
1.08
750 mA
250 mA
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
TC, CASE TEMPERATURE (C)
100
IDQ (mA) Slope (mV/C)
250
750
1500
–3.20
–2.48
–2.16
–1.36
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
Crss
Coss
Ciss
IDQ(A+B) = 100 mA
1500 mA
VDD =65Vdc
MRFX600H MRFX600HS MRFX600GS
5
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.94.7(7.3 cm 12.0 cm)
Table 7. 87.5–108 MHz Broadband Performance (In NXP Reference Circuit, 50 ohm system)
IDQ(A+B) = 250 mA, Pin =5W,CW
Frequency
(MHz)
VDD
(V)
Pout
(W)
Gps
(dB)
D
(%)
87.5 62 705 21.5 80.0
98 62 680 21.3 83.0
108 62 650 21.2 82.5
6
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 2.94.7(7.3 cm 12 cm)
Figure 4. MRFX600H 87.5–108 MHz Broadband Reference Circuit Component Layout
D111952
Rev. 0
Q1
Coax1
Coax3
Coax2
R2
C5
C6
C3
C9
C19
C20
C21
C11
C12
C13
C14
C15
C16
C17
C18
C10
C7
C4 C8
B1
R1
C2
C1
T1
L1
L2
L3
L4
R3
aaa-031570
Table 8. MRFX600H 87.5–108 MHz Broadband Reference Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Long Ferrite Bead 2743021447 Fair-Rite
C1 30 pF Chip Capacitor ATC100B300JT500XT ATC
C2, C5, C6, C9, C10, C11, C12,
C13, C14
1000 pF Chip Capacitor ATC100B102JT50XT ATC
C3, C4 10,000 pF Chip Capacitor ATC200B103KT50XT ATC
C7, C8 470 pF Chip Capacitor ATC100B471JT200XT ATC
C15 1.0 pF Chip Capacitor ATC100B1R0BT500XT ATC
C16 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26 Multicomp
C17, C18 10 F Chip Capacitor C5750X7S2A106M TDK
C19 470 nF Chip Capacitor GRM31MR72A474KA35L Murata
C20 47 nF Chip Capacitor GRM31MR72A473KA01L Murata
C21 15 nF Chip Capacitor C3225CH2A153JT TDK
Coax1,2 35 Flex Cable, 4.5Shield Length HSF-141C-35 Hongsen Cable
Coax3 50 Flex Cable, 6.3Shield Length SM141 Huber + Suhner
L1 100 nH Inductor 1812SMS-R10JLC Coilcraft
L2, L3 8.0 nH, 3 Turn Inductor A03TJLC Coilcraft
L4 5 Turn, #16 AWG, ID = 0.315Inductor Handwound NXP
Q1 RF Power LDMOS Transistor MRFX600H NXP
R1 10 , 1/4 W Chip Resistor CRCW120610R0JNEA Vishay
R2, R3 33 , 2 W Chip Resistor 352133RFT TE Connectivity
T1 2–300 MHz, 3 Turns, 9:1 Impedance Ratio
Transformer
TUI-LF-9 Communication
Concepts
PCB Rogers RO4350B, 0.030,r=3.66 D111952 MTL
MRFX600H MRFX600HS MRFX600GS
7
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS – 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
f = 87.5 MHz
98 MHz
108 MHz
19
93
f, FREQUENCY (MHz)
Figure 5. Power Gain, Drain Efficiency and CW Output Power
versus Frequency at a Constant Input Power
25
24
400
90
85
80
70
800
700
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
23
22
21
20
16
95 97 99 101 103 105 107
75
600
Pout,OUTPUT
POWER (WATTS)
VDD =62Vdc,P
in =5W,l
DQ(A+B) = 250 mA
9189 10987
18
500
17
Gps
Pout
0
Pin, INPUT POWER (WATTS)
Figure 6. CW Output Power versus Input Power and Frequency
Pout, OUTPUT POWER (WATTS)
600
500
400
34
700
25
800
67
300
1
VDD =62Vdc,I
DQ(A+B) = 250 mA
30
300 350
28
24
80
75
70
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
Gps, POWER GAIN (dB)
20
400 450
29
90
Gps
D
500 750
26
22
550 600 700 800
VDD =62Vdc,l
DQ(A+B) = 250 mA
65
60
55
50
D, DRAIN EFFICIENCY (%)
f = 87.5 MHz
108 MHz
98 MHz
87.5 MHz
98 MHz
108 MHz
27
25
23
21
650
85
95
100
8
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
f
MHz
Zsource
Zload
87.5 5.46 + j12.00 11.09 + j8.82
98 6.45 + j11.40 11.51 + j8.88
108 5.57 + j11.13 11.84 + j9.06
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured
from drain to drain, balanced configuration.
Figure 8. Broadband Series Equivalent Source and Load Impedance – 87.5–108 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
50
50
MRFX600H MRFX600HS MRFX600GS
9
RF Device Data
NXP Semiconductors
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
H2
(175 MHz)
H3
(262.5 MHz)
H4
(350 MHz)
–27 dB –15 dB –33 dB
Center: 228.5 MHz Span: 350 MHz35 MHz
Figure 9. 87.5 MHz Harmonics @ 675 W CW
H4
H3
H2
175 MHz –27 dB
262.5 MHz –15 dB
350 MHz –33 dB
H2
H3
H4
F1 87.5 MHz
Fundamental (F1)
Amplitude (10 dB per Division)
10
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
230 MHz PRODUCTION TEST FIXTURE — 4.06.0(10.2 cm 12.7 cm)
Figure 10. MRFX600H Production Test Fixture Component Layout — 230 MHz
MRFX600H
Rev. 0
D105133
cut out
area
C25
C26 C27 C28
C22 C23
C21
C8
C7
C1
C2
C3
C4
C5
L1
R1
C13
C12
C11
C10
L2
C9
R2
C6
L3
C24
C16*
C17*
C15
C29
Coax3
Coax4
Coax1
Coax2
C20
C14
C18*
C19*
L4
*C16, C17, C18 and C19 are mounted vertically. aaa-031625
Table 9. MRFX600H Production Test Fixture Component Designations and Values — 230 MHz
Part Description Part Number Manufacturer
C1 13 pF Chip Capacitor ATC100B130JT500XT ATC
C2, C3 27 pF Chip Capacitor ATC100B270JT500XT ATC
C4 0.8–8.0 pF Variable Capacitor 27291SL Johanson
Components
C5 33 pF Chip Capacitor ATC100B330JT500XT ATC
C6, C10 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C7, C11 0.1 F Chip Capacitor CDR33BX104AKWS AVX
C8, C12 220 nF Chip Capacitor C1812C224K5RACTU Kemet
C9, C13, C21, C25 1000 pF Chip Capacitor ATC100B102JT50XT ATC
C14, C29 39 pF Chip Capacitor ATC100B390JT500XT ATC
C15 43 pF Chip Capacitor ATC100B430JT500XT ATC
C16, C17, C18, C19 240 pF Chip Capacitor ATC100B241JT200XT ATC
C20 9.1 pF Chip Capacitor ATC100B9R1BT500XT ATC
C22, C23, C24, C26, C27, C28 470 F, 100 V Electrolytic Capacitor MCGPR100V477M16X32 Multicomp
Coax1, 2, 3, 4 25 Semi-rigid Coax, 2.2Shield Length UT-141C-25 Micro-Coax
L1, L2 5 nH Inductor A02TKLC Coilcraft
L3, L4 6.6 nH Inductor GA3093-ALC Coilcraft
R1, R2 10 , 1/4 W Chip Resistor CRCW120610R0JNEA Vishay
PCB Rogers AD255C, 0.030,r= 2.55, 1 oz. Copper D105133 MTL
MRFX600H MRFX600HS MRFX600GS
11
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 230 MHz, TC=25_C
PRODUCTION TEST FIXTURE
100 mA
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 11. Output Power versus Gate--Source
Voltage at a Constant Input Power
0
Pout, OUTPUT POWER (WATTS) PEAK
400
300
1.5 2.0 2.5 3.0
600
500 Pin =1.4W
0.5 1.0
Pin, INPUT POWER (dBm) PEAK
48
44
Pout, OUTPUT POWER (dBm) PEAK
40
30272415 2118
52
56
230 610 677
f
(MHz)
P1dB
(W)
P3dB
(W)
Figure 12. Output Power versus Input Power
Pout, OUTPUT POWER (WATTS) PEAK
Figure 13. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
20
18
IDQ(A+B) = 400 mA
26
10
80
60
40
20
30
D
Gps
14
D
TC= –40_C
22
20
18
30
110
0
70
60
50
40
30
20
10
32 80
Pout, OUTPUT POWER (WATTS) PEAK
Figure 14. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
16
0
Pout, OUTPUT POWER (WATTS) PEAK
Figure 15. Power Gain versus Output Power
and Drain--Source Voltage
28
Gps, POWER GAIN (dB)
24
22
100 200 300
26
20
30
700
36
60
24
26
28
400 500
Gps
1000
1000
40 V
3.5
16
22
24
28
70
50
30
10
85_C
25_C
25_C
–40_C
18
VDD = 65 Vdc, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
90
VDD =65Vdc,I
DQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
VDD =65Vdc,I
DQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
33 36
100 mA
400 mA
300 mA
200
100
Pin =0.7W
12
100
0
VDD = 65 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle
300 mA
200 mA
200 mA
100
85_C
16
14
600 700 800
VDD =30V
50 V
55 V 60 V 65 V
IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
12
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
230 MHz PRODUCTION TEST FIXTURE
f
MHz
Zsource
Zload
230 1.5 + j4.9 5.0 + j7.1
Zsource = Test fixture impedance as measured from
gate to gate, balanced configuration.
Zload = Test fixture impedance as measured from
drain to drain, balanced configuration.
Figure 16. Series Equivalent Source and Load Impedance – 230 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
Zsource Zload
50
50
MRFX600H MRFX600HS MRFX600GS
13
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
14
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
MRFX600H MRFX600HS MRFX600GS
15
RF Device Data
NXP Semiconductors
16
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
MRFX600H MRFX600HS MRFX600GS
17
RF Device Data
NXP Semiconductors
18
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
MRFX600H MRFX600HS MRFX600GS
19
RF Device Data
NXP Semiconductors
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Sept. 2018 Initial release of data sheet
20
RF Device Data
NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
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implementers to use NXP products. There are no express or implied copyright licenses
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including without limitation consequential or incidental damages. “Typical” parameters
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NXP and the NXP logo are trademarks of NXP B.V. All other product or service names
are the property of their respective owners.
E2018 NXP B.V.
Document Number: MRFX600H
Rev. 0, 09/2018