NXP Semiconductors Technical Data Document Number: MRFX600H Rev. 0, 09/2018 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz. MRFX600H MRFX600HS MRFX600GS 1.8-400 MHz, 600 W CW, 65 V WIDEBAND RF POWER LDMOS TRANSISTORS Typical Performance Frequency (MHz) Signal Type VDD (V) Pout (W) Gps (dB) D (%) 87.5-108 (1,2) CW 62 680 CW 21.3 83.0 230 (3) Pulse (100 sec, 20% Duty Cycle) 65 600 Peak 26.4 74.4 NI--780H--4L MRFX600H Load Mismatch/Ruggedness Frequency (MHz) 230 (3) Signal Type VSWR Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles Pin (W) Test Voltage 2.5 Peak (3 dB Overdrive) 65 Result 1. Measured in 87.5-108 MHz broadband reference circuit (page 5). 2. The values shown are the center band performance numbers across the indicated frequency range. 3. Measured in 230 MHz production test fixture (page 10). Features Unmatched input and output allowing wide frequency range utilization Output impedance fits a 4:1 transformer Device can be used single--ended or in a push--pull configuration Qualified up to a maximum of 65 VDD operation Characterized from 30 to 65 V for extended power range High breakdown voltage for enhanced reliability Suitable for linear application with appropriate biasing Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Typical Applications Industrial, scientific, medical (ISM) - Laser generation - Plasma generation - Particle accelerators - MRI, RF ablation and skin treatment - Industrial heating, welding and drying systems Radio and VHF TV broadcast Aerospace - HF communications - Radar Mobile radio - HF and VHF communications - PMR base stations 2018 NXP B.V. RF Device Data NXP Semiconductors NI--780S--4L MRFX600HS No Device Degradation NI--780GS--4L MRFX600GS Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections MRFX600H MRFX600HS MRFX600GS 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS -0.5, +179 Vdc Gate--Source Voltage VGS -6.0, +10 Vdc Storage Temperature Range Tstg - 65 to +150 C Case Operating Temperature Range TC -40 to +150 C TJ -40 to +225 C PD 1333 6.67 W W/C Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 75C, 650 W CW, 62 Vdc, IDQ(A+B) = 250 mA, 98 MHz RJC 0.15 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 73C, 600 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 65 Vdc, IDQ(A+B) = 100 mA, 230 MHz ZJC 0.037 C/W Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) Class 2, passes 2500 V Charge Device Model (per JS--002--2014) Class C3, passes 1000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS -- -- 1 Adc V(BR)DSS 179 193 -- Vdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 179 Vdc, VGS = 0 Vdc) IDSS -- -- 100 Adc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 277 Adc) VGS(th) 2.1 2.5 2.9 Vdc Gate Quiescent Voltage (VDD = 65 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 2.7 2.9 3.2 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 0.74 Adc) VDS(on) -- 0.2 -- Vdc gfs -- 33.6 -- S Off Characteristics (4) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mAdc) On Characteristics Forward Transconductance (4) (VDS = 10 Vdc, ID = 32 Adc) 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com/RF/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Each side of device measured separately. (continued) MRFX600H MRFX600HS MRFX600GS 2 RF Device Data NXP Semiconductors Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (VDS = 65 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.1 -- pF Output Capacitance (VDS = 65 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 84 -- pF Input Capacitance (VDS = 65 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss -- 299 -- pF Dynamic Characteristics (1) Functional Tests (2) (In NXP Production Test Fixture, 50 ohm system) VDD = 65 Vdc, IDQ(A+B) = 100 mA, Pout = 600 W Peak (120 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Gps 24.5 26.4 27.5 dB Drain Efficiency D 71.0 74.4 -- % Input Return Loss IRL -- -23 -12 dB Table 5. Load Mismatch/Ruggedness (In NXP Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) 230 Signal Type VSWR Pin (W) Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 2.5 Peak (3 dB Overdrive) Test Voltage, VDD Result 65 No Device Degradation Table 6. Ordering Information Device MRFX600HR5 MRFX600HSR5 MRFX600GSR5 Tape and Reel Information R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel Package NI--780H--4L NI--780S--4L NI--780GS--4L 1. Each side of device measured separately. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 1000 1.08 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc C 1.06 NORMALIZED VGS(Q) C, CAPACITANCE (pF) iss Coss 100 10 IDQ(A+B) = 100 mA VDD = 65 Vdc 250 mA 1.04 1.02 1 750 mA 1500 mA 0.98 0.96 0.94 Crss 1 0 10 20 30 40 50 60 70 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Figure 2. Capacitance versus Drain--Source Voltage 0.92 -50 -25 0 25 50 75 100 TC, CASE TEMPERATURE (C) IDQ (mA) Slope (mV/C) 100 -3.20 250 -2.48 750 -2.16 1500 -1.36 Figure 3. Normalized VGS versus Quiescent Current and Case Temperature MRFX600H MRFX600HS MRFX600GS 4 RF Device Data NXP Semiconductors 87.5-108 MHz BROADBAND REFERENCE CIRCUIT - 2.9 4.7 (7.3 cm 12.0 cm) Table 7. 87.5-108 MHz Broadband Performance (In NXP Reference Circuit, 50 ohm system) IDQ(A+B) = 250 mA, Pin = 5 W, CW Frequency (MHz) VDD (V) Pout (W) Gps (dB) D (%) 87.5 62 705 21.5 80.0 98 62 680 21.3 83.0 108 62 650 21.2 82.5 MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors 5 87.5-108 MHz BROADBAND REFERENCE CIRCUIT -- 2.9 4.7 (7.3 cm 12 cm) C16 C18 D111952 C17 C3 B1 C7 C19 C20 C21 C5 Coax1 R2 Coax3 C2 C9 R1 L2 C11 C12 L1 Q1 C13 L4 T1 C15 L3 C14 C10 C1 R3 C6 Coax2 C4 C8 Rev. 0 aaa-031570 Figure 4. MRFX600H 87.5-108 MHz Broadband Reference Circuit Component Layout Table 8. MRFX600H 87.5-108 MHz Broadband Reference Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair-Rite C1 30 pF Chip Capacitor ATC100B300JT500XT ATC C2, C5, C6, C9, C10, C11, C12, C13, C14 1000 pF Chip Capacitor ATC100B102JT50XT ATC C3, C4 10,000 pF Chip Capacitor ATC200B103KT50XT ATC C7, C8 470 pF Chip Capacitor ATC100B471JT200XT ATC C15 1.0 pF Chip Capacitor ATC100B1R0BT500XT ATC C16 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26 Multicomp C17, C18 10 F Chip Capacitor C5750X7S2A106M TDK C19 470 nF Chip Capacitor GRM31MR72A474KA35L Murata C20 47 nF Chip Capacitor GRM31MR72A473KA01L Murata C21 15 nF Chip Capacitor C3225CH2A153JT TDK Coax1,2 35 Flex Cable, 4.5 Shield Length HSF-141C-35 Hongsen Cable Coax3 50 Flex Cable, 6.3 Shield Length SM141 Huber + Suhner L1 100 nH Inductor 1812SMS-R10JLC Coilcraft L2, L3 8.0 nH, 3 Turn Inductor A03TJLC Coilcraft L4 5 Turn, #16 AWG, ID = 0.315 Inductor Handwound NXP Q1 RF Power LDMOS Transistor MRFX600H NXP R1 10 , 1/4 W Chip Resistor CRCW120610R0JNEA Vishay R2, R3 33 , 2 W Chip Resistor 352133RFT TE Connectivity T1 2-300 MHz, 3 Turns, 9:1 Impedance Ratio Transformer TUI-LF-9 Communication Concepts PCB Rogers RO4350B, 0.030, r = 3.66 D111952 MTL MRFX600H MRFX600HS MRFX600GS 6 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS - 87.5-108 MHz BROADBAND REFERENCE CIRCUIT 25 24 85 80 Gps 22 75 70 21 800 20 Pout 19 700 600 18 17 VDD = 62 Vdc, Pin = 5 W, lDQ(A+B) = 250 mA 16 87 89 93 91 95 97 99 500 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 23 D, DRAIN EFFICIENCY (%) 90 D 400 107 109 101 103 105 f, FREQUENCY (MHz) Figure 5. Power Gain, Drain Efficiency and CW Output Power versus Frequency at a Constant Input Power Pout, OUTPUT POWER (WATTS) 800 VDD = 62 Vdc, IDQ(A+B) = 250 mA f = 87.5 MHz 700 98 MHz 108 MHz 600 500 400 300 0 1 2 3 4 5 6 7 Pin, INPUT POWER (WATTS) Figure 6. CW Output Power versus Input Power and Frequency 29 100 VDD = 62 Vdc, lDQ(A+B) = 250 mA 95 f = 87.5 MHz Gps, POWER GAIN (dB) 28 90 27 85 26 80 25 108 MHz D 98 MHz 24 23 Gps 98 MHz 22 108 MHz 87.5 MHz 21 20 300 350 400 75 70 65 60 D, DRAIN EFFICIENCY (%) 30 55 450 500 550 600 650 700 750 50 800 Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain and Drain Efficiency versus CW Output Power and Frequency MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors 7 87.5-108 MHz BROADBAND REFERENCE CIRCUIT f MHz Zsource Zload 87.5 5.46 + j12.00 11.09 + j8.82 98 6.45 + j11.40 11.51 + j8.88 108 5.57 + j11.13 11.84 + j9.06 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50 = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network 50 + Z load Figure 8. Broadband Series Equivalent Source and Load Impedance - 87.5-108 MHz MRFX600H MRFX600HS MRFX600GS 8 RF Device Data NXP Semiconductors HARMONIC MEASUREMENTS -- 87.5-108 MHz BROADBAND REFERENCE CIRCUIT Fundamental (F1) H3 F1 H2 H3 H4 87.5 MHz 175 MHz -27 dB 262.5 MHz -15 dB 350 MHz -33 dB Amplitude (10 dB per Division) H2 H4 Center: 228.5 MHz 35 MHz H3 H4 H2 (175 MHz) (262.5 MHz) (350 MHz) -27 dB -15 dB -33 dB Span: 350 MHz Figure 9. 87.5 MHz Harmonics @ 675 W CW MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors 9 230 MHz PRODUCTION TEST FIXTURE -- 4.0 6.0 (10.2 cm 12.7 cm) C12 C11 C13 C10 C22 C23 R1 Coax1 Coax3 L3 C2 C4 L1 C16* C17* C14 C5 C1 C24 C21 L2 C3 C20 C15 C18* C19* C29 cut out area L4 Coax2 Coax4 R2 D105133 C6 C9 C7 C25 C26 C27 C28 MRFX600H Rev. 0 C8 aaa-031625 *C16, C17, C18 and C19 are mounted vertically. Figure 10. MRFX600H Production Test Fixture Component Layout -- 230 MHz Table 9. MRFX600H Production Test Fixture Component Designations and Values -- 230 MHz Part Description Part Number Manufacturer C1 13 pF Chip Capacitor ATC100B130JT500XT ATC C2, C3 27 pF Chip Capacitor ATC100B270JT500XT ATC C4 0.8-8.0 pF Variable Capacitor 27291SL Johanson Components C5 33 pF Chip Capacitor ATC100B330JT500XT ATC C6, C10 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C7, C11 0.1 F Chip Capacitor CDR33BX104AKWS AVX C8, C12 220 nF Chip Capacitor C1812C224K5RACTU Kemet C9, C13, C21, C25 1000 pF Chip Capacitor ATC100B102JT50XT ATC C14, C29 39 pF Chip Capacitor ATC100B390JT500XT ATC C15 43 pF Chip Capacitor ATC100B430JT500XT ATC C16, C17, C18, C19 240 pF Chip Capacitor ATC100B241JT200XT ATC C20 9.1 pF Chip Capacitor ATC100B9R1BT500XT ATC C22, C23, C24, C26, C27, C28 470 F, 100 V Electrolytic Capacitor MCGPR100V477M16X32 Multicomp Coax1, 2, 3, 4 25 Semi-rigid Coax, 2.2 Shield Length UT-141C-25 Micro-Coax L1, L2 5 nH Inductor A02TKLC Coilcraft L3, L4 6.6 nH Inductor GA3093-ALC Coilcraft R1, R2 10 , 1/4 W Chip Resistor CRCW120610R0JNEA Vishay PCB Rogers AD255C, 0.030, r = 2.55, 1 oz. Copper D105133 MTL MRFX600H MRFX600HS MRFX600GS 10 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS -- 230 MHz, TC = 25_C PRODUCTION TEST FIXTURE Pout, OUTPUT POWER (WATTS) PEAK 700 VDD = 65 Vdc, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 600 500 Pin = 1.4 W 400 300 Pin = 0.7 W 200 100 0 0 0.5 1.5 1.0 2.0 2.5 3.0 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 11. Output Power versus Gate--Source Voltage at a Constant Input Power 56 28 52 48 44 40 36 18 21 24 27 30 33 26 22 100 mA 20 70 Gps 300 mA 24 60 50 200 mA D 40 30 18 16 12 36 80 IDQ(A+B) = 400 mA 300 mA 14 15 90 VDD = 65 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle 400 mA 20 10 200 mA 100 mA 10 0 1000 100 Pin, INPUT POWER (dBm) PEAK D, DRAIN EFFICIENCY (%) 30 VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) PEAK 60 Pout, OUTPUT POWER (WATTS) PEAK f (MHz) P1dB (W) P3dB (W) 230 610 677 Figure 13. Power Gain and Drain Efficiency versus Output Power and Quiescent Current Figure 12. Output Power versus Input Power -40_C 25_C 28 85_C 26 30 70 28 60 50 Gps 24 22 TC = -40_C 40 D 25_C 20 1 30 20 85_C 18 16 80 10 10 100 0 1000 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz 30 Pulse Width = 100 sec, 20% Duty Cycle D, DRAIN EFFICIENCY (%) 32 26 24 22 20 50 V 18 60 V 65 V 40 V 16 14 55 V IDQ(A+B) = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle VDD = 30 V 0 100 200 300 400 500 600 700 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 14. Power Gain and Drain Efficiency versus Output Power Figure 15. Power Gain versus Output Power and Drain--Source Voltage 800 MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors 11 230 MHz PRODUCTION TEST FIXTURE f MHz Zsource Zload 230 1.5 + j4.9 5.0 + j7.1 Zsource = Test fixture impedance as measured from gate to gate, balanced configuration. Zload 50 Input Matching Network = Test fixture impedance as measured from drain to drain, balanced configuration. + -Zsource Device Under Test -- Output Matching Network 50 + Zload Figure 16. Series Equivalent Source and Load Impedance - 230 MHz MRFX600H MRFX600HS MRFX600GS 12 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors 13 MRFX600H MRFX600HS MRFX600GS 14 RF Device Data NXP Semiconductors MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors 15 MRFX600H MRFX600HS MRFX600GS 16 RF Device Data NXP Semiconductors MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors 17 MRFX600H MRFX600HS MRFX600GS 18 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Sept. 2018 Description Initial release of data sheet MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors 19 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. 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NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V. MRFX600H MRFX600HS MRFX600GS Document Number: MRFX600H Rev. 0, 09/2018 20 RF Device Data NXP Semiconductors