IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE(sat) tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M VGES VGEM 1200 1200 V V Continuous Transient 20 30 V V IC25 IC90 IF110 ICM TC TC TC TC 64 40 25 105 A A A A IA EAS TC = 25C TC = 25C 20 400 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150C, RG = 10 Clamped Inductive Load ICM = 80 @VCE VCES A PC TC = 25C 480 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 1.13/10 Nm/lb.in. 6 g = 25C (Chip Capability) = 90C = 110C = 25C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features z z z z z z z Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated High Current Handling Capability International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC z V z z TJ = 125C IGES z = 40A, VGE = 15V, Note 1 TJ = 125C (c) 2012 IXYS CORPORATION, All Rights Reserved 4.8 5.0 V 50 500 A A 100 nA 4.0 V V z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100417B(02/13) IXYH40N120C3D1 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 12 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 * VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25C IC = 40A, VGE = 15V VCE = 0.5 * VCES, RG = 10 Note 2 Inductive load, TJ = 125C IC = 40A, VGE = 15V VCE = 0.5 * VCES, RG = 10 Note 2 RthJC RthCS TO-247 (IXYH) Outline 20 S 1880 225 40 pF pF pF 85 14 38 nC nC nC 24 60 3.90 125 38 0.66 ns ns mJ ns ns mJ 1.15 27 72 8.20 140 38 0.70 ns ns mJ ns ns mJ 0.21 0.26 C/W C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) (TJ = 25C, Unless Otherwise Specified) Symbol Test Conditions VF IRM trr IF = 30A,VGE = 0V, Note 1 Characteristic Value Min. Typ. Max. TJ = 150C IF = 30A,VGE = 0V, -diF/dt = 100A/s, TJ = 100C VR = 600V 195 TJ = 100C RthJC Notes: 3.00 V V 9 A 1.75 ns 0.90 C/W 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH40N120C3D1 Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 140 80 VGE = 15V 13V 12V 11V 10V IC - Amperes 60 13V 12V 100 50 9V 40 8V 30 7V 20 10 6V 0 11V 10V 80 60 9V 40 8V 20 7V 6V 0 0 1 2 3 4 5 6 0 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ T J = 150C Fig. 4. Dependence of VCE(sat) on Junction Temperature 30 2.8 80 VGE = 15V 13V 11V 10V 9V 60 VGE = 15V 2.4 8V VCE(sat) - Normalized 70 IC - Amperes VGE = 15V 120 IC - Amperes 70 50 7V 40 30 6V 2.0 I C = 80A 1.6 I C = 40A I C 1.2 20 0.8 10 5V 0 0 1 2 3 4 5 6 7 8 -50 9 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 80 11 TJ = 25C 10 TJ = - 40C 25C 150C 70 9 60 I C IC - Amperes 8 VCE - Volts = 20A 0.4 = 80A 7 6 5 40A 50 40 30 20 4 10 3 20A 2 0 6 7 8 9 10 11 12 VGE - Volts (c) 2012 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 10.0 10.5 IXYH40N120C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 28 TJ = - 40C 25C 16 150C I C = 40A I G = 10mA 12 VGE - Volts g f s - Siemens 20 VCE = 600V 14 24 12 8 10 8 6 4 4 2 0 0 0 10 20 30 40 50 60 70 80 90 0 10 20 30 IC - Amperes 40 50 60 70 80 90 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 90 10,000 70 1,000 IC - Amperes Capacitance - PicoFarads 80 Cies Coes 100 10 0 5 10 15 20 25 30 50 40 30 Cres f = 1 MHz 60 35 40 20 TJ = 150C 10 RG = 10 dv / dt < 10V / ns 0 200 300 400 500 VCE - Volts 600 700 800 900 1000 1100 1200 1300 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - C / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH40N120C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5 Eon - 4 Eoff 2.5 40 VCE = 600V 2 20 I C 20 25 30 35 40 45 50 10 TJ = 25C 0.5 0 20 30 40 tfi 2.0 20 I C = 80A 1.5 15 10 I C = 40A t f i - Nanoseconds 25 400 VCE = 600V 70 I C 300 = 80A 50 I C 200 = 40A 30 t d(off) - Nanoseconds VCE = 600V td(off) - - - - TJ = 125C, VGE = 15V 90 0.5 100 5 0.0 25 50 75 0 125 100 10 0 10 15 20 25 120 tfi 180 120 160 100 70 80 80 140 60 130 I C = 40A, 80A 80 20 110 60 0 20 (c) 2012 IXYS CORPORATION, All Rights Reserved 150 120 100 IC - Amperes td(off) - - - - 40 40 0 t f i - Nanoseconds 120 TJ = 25C, 125C 60 55 25 50 75 TJ - Degrees Centigrade 100 100 125 t d(off) - Nanoseconds 60 t d(off) - Nanoseconds 140 50 50 VCE = 600V 80 40 45 RG = 10 , VGE = 15V VCE = 600V 30 40 160 tfi td(off) - - - - RG = 10 , VGE = 15V 20 35 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 100 30 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 80 500 30 Eon - MilliJoules Eoff - MilliJoules ---- RG = 10 , VGE = 15V 1.0 70 110 35 2.5 60 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.5 Eon 50 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 5 0.0 55 RG - Ohms 3.0 15 TJ = 125C 1.0 0 15 20 1.5 10 0 25 2.0 = 40A 1 ---- Eon - MilliJoules 30 Eon RG = 10 , VGE = 15V VCE = 600V Eon - MilliJoules I C = 80A 3 10 30 --- TJ = 125C , VGE = 15V Eoff - MilliJoules Eoff Eoff - MilliJoules 3.0 50 IXYH40N120C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 600 tri td(on) - - - - 60 = 80A 200 40 I C = 40A 100 20 0 15 VCE = 600V 20 25 30 35 40 45 50 32 200 30 TJ = 125C 160 28 120 26 TJ = 25C 80 24 40 22 0 0 10 34 20 20 55 t d(on) - Nanoseconds 300 t d(on) - Nanoseconds 80 td(on) - - - - RG = 10 , VGE = 15V 240 400 C tri 280 VCE = 600V I 36 100 TJ = 125C, VGE = 15V t r i - Nanoseconds 500 t r i - Nanoseconds 320 120 30 40 50 60 70 80 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 450 38 tri 400 350 36 34 VCE = 600V 300 I C 32 = 80A 250 30 200 28 150 26 100 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 10 , VGE = 15V 24 I C = 40A 50 22 0 25 50 75 100 20 125 TJ - Degrees Centigrade Fig. 21. Maximum Transient Thermal Impedance (Diode) 1 Z(th)JC - C / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_40N120C3(4A) 11-15-11 IXYH40N120C3D1 Fig. 22. Forward Current IF vs VF Fig. 23. Reverse Recovery Charge QRM vs. -diF/dt 5 70 TVJ = 100C 60 VR = 600V 4 50 IF = 60A TVJ = 150C IF [A] 100C 40 3 25C QRM [C] 30 30A 2 15A 20 1 10 0 0 0.5 1 1.5 2 2.5 3 3.5 0 100 4 1000 500 VF [V] -diF/dt [A/s] Fig. 25. Dynamic Parameters QRM, IRM vs. T VJ Fig. 24. Peak Reverse Current IRM vs. -diF/dt 2 60 TVJ = 100C IRM & Q RM [normalized] VR = 600V 50 40 IF = 60A, 30A, 15A IRM 30 [A] 20 1.5 1 IRM 0.5 QRM 10 0 0 0 200 400 600 800 20 1000 40 60 80 100 120 -diF/dt [A/s] Fig. 26. Recovery Time trr vs. -diF/dt 120 1.2 TVJ = 100C TVJ = 100C IF = 30A 100 VR = 600V 200 160 Fig. 27. Peak Forward Voltage VFR, trr vs -diF/dt 220 1 trr 80 trr [ns] 140 TVJ [C] 0.8 180 VFR [V] IF = 60A 30A 15A 160 140 120 0.6 trr 60 [s] VFR 40 0.4 20 0.2 0 0 200 400 600 -diF/dt [A/s] (c) 2012 IXYS CORPORATION, All Rights Reserved 800 1000 0 100 200 300 400 500 600 -diF/dt [A/s] 700 800 900 0 1000