© 2012 IXYS CORPORATION, All Rights Reserved
IXYH40N120C3D1 VCES = 1200V
IC90 = 40A
VCE(sat) ≤ ≤
≤ ≤
≤
4.0V
tfi(typ) = 38ns
DS100417B(02/13)
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 AD
GCE Tab
High-Speed IGBT
for 20-50 kHz Switching
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 1200 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 μA
TJ = 125°C 500 μA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 40A, VGE = 15V, Note 1 4.0 V
TJ = 125°C 4.8 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (Chip Capability) 64 A
IC90 TC= 90°C 40 A
IF110 TC= 110°C 25 A
ICM TC= 25°C, 1ms 105 A
IATC= 25°C 20 A
EAS TC= 25°C 400 mJ
SSOA VGE = 15V, TVJ = 150°C, RG = 10Ω ICM = 80 A
(RBSOA) Clamped Inductive Load @VCE ≤ VCES
PCTC= 25°C 480 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight 6g
Features
zOptimized for Low Switching Losses
zSquare RBSOA
zPositive Thermal Coefficient of
Vce(sat)
zAnti-Parallel Ultra Fast Diode
zAvalanche Rated
zHigh Current Handling Capability
zInternational Standard Package
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zHigh Frequency Power Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
1200V XPTTM IGBT
GenX3TM w/ Diode
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120C3D1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
e
∅ P
TO-247 (IXYH) Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 40A, VCE = 10V, Note 1 12 20 S
Cies 1880 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 225 pF
Cres 40 pF
Qg(on) 85 nC
Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES 14 nC
Qgc 38 nC
td(on) 24 ns
tri 60 ns
Eon 3.90 mJ
td(off) 125 ns
tfi 38 ns
Eoff 0.66 1.15 mJ
td(on) 27 ns
tri 72 ns
Eon 8.20 mJ
td(off) 140 ns
tfi 38 ns
Eoff 0.70 mJ
RthJC 0.26 °C/W
RthCS 0.21 °C/W
Inductive load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 10Ω
Note 2
Inductive load, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 10Ω
Note 2
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
(TJ = 25°C, Unless Otherwise Specified) Characteristic Value
Symbol Test Conditions Min. Typ. Max.
VF 3.00 V
TJ = 150°C 1.75 V
IRM 9 A
trr 195 ns
RthJC 0.90 °C/W
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 600V TJ = 100°C
IF = 30A,VGE = 0V, Note 1
Reverse Diode (FRED)
© 2012 IXYS CORPORATION, All Rights Reserved
IXYH40N120C3D1
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0123456
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V
11V
10V
7V
9V
6V
8V
Fi g . 2. Exte n d ed Ou tpu t Ch ar acter isti cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
12V
9V
13V
10V
7V
11V
6V
8V
Fi g . 3. Ou tp ut C har acteri sti cs @ T
J
= 150º C
0
10
20
30
40
50
60
70
80
0123456789
V
CE
- Volts
I
C
- Amperes
7V
6V
5V
8V
VGE
= 15V
13V
11V
10V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
VGE
= 15V
I C = 40A
I C = 20A
I C = 80A
Fi g . 5. C o l l ector -to -E mi tter Vol tag e vs.
Gate-to -Emi tter V o l tag e
2
3
4
5
6
7
8
9
10
11
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I C
= 80
A
TJ = 25ºC
40
A
20
A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5
V
GE
- Volts
I
C
- Amperes
TJ = - 40ºC
25ºC
150ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120C3D1
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
0 102030405060708090
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fi g . 10 . R ever s e-B i a s Safe Op eratin g Are a
0
10
20
30
40
50
60
70
80
90
200 300 400 500 600 700 800 900 1000 1100 1200 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
Ω
dv / dt < 10V / ns
Fi g . 11. Maximum Transi en t Th er mal I mp edan ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 40A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2012 IXYS CORPORATION, All Rights Reserved
IXYH40N120C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
Eoff - MilliJoules
0
10
20
30
40
50
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
10
30
50
70
90
110
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t f i - Nanoseconds
0
100
200
300
400
500
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig . 13. In d u ctive Switchi ng En erg y Lo ss vs.
Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
20 30 40 50 60 70 80
I
C
- Amperes
Eoff - MilliJoules
0
5
10
15
20
25
30
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω ,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction T emperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 50 75 100 125
T
J
- Degrees Centigrade
Eoff - MilliJoules
0
5
10
15
20
25
30
35
Eon - MilliJoules
Eoff Eon - - - -
R
G
= 10
Ω ,
V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
20 30 40 50 60 70 80
I
C
- Amperes
t f i - Nanoseconds
60
80
100
120
140
160
180
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC, 125ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Juncti on Temperature
0
20
40
60
80
100
120
25 50 75 100 125
T
J
- Degrees Centigrade
t f i - Nanoseconds
100
110
120
130
140
150
160
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A, 80A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120C3D1
IXYS REF: IXY_40N120C3(4A) 11-15-11
Fi g. 19. I n du cti ve Tu r n -on Switchi n g Times vs.
Collector Current
0
40
80
120
160
200
240
280
320
20 30 40 50 60 70 80
I
C
- Amperes
t
r i - Nanoseconds
20
22
24
26
28
30
32
34
36
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10Ω , V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 125ºC
Fig. 20. Inductive Turn-on Switching T imes vs.
Jun c ti o n Temp er at u r e
0
50
100
150
200
250
300
350
400
450
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i - Nanoseconds
20
22
24
26
28
30
32
34
36
38
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10Ω , V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 18. Inductive T urn-on Switching T imes vs.
Gate R es istance
0
100
200
300
400
500
600
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t r i - Nanoseconds
0
20
40
60
80
100
120
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fi g . 21. Maximum Tr an si ent Thermal I mp ed ance (D i o d e)
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
© 2012 IXYS CORPORATION, All Rights Reserved
IXYH40N120C3D1
Fig. 22. Forward Current I
F
vs V
F
0
10
20
30
40
50
60
70
0 0.5 1 1.5 2 2.5 3 3.5 4
V
F
[V]
I
F
[A]
25ºC
T
VJ
= 150ºC
100ºC
Fi g . 23. Rever se R eco very C har g e Q
RM
vs. -di
F
/dt
0
1
2
3
4
5
100 1000
-di
F
/dt [A/µs]
Q
RM
[µC]
T
VJ
= 100ºC
V
R
= 600V
I
F
= 60A
15A
30A
500
Fi g . 24. Pea k R ever s e C u rr en t I
RM
vs. -d i
F
/dt
0
10
20
30
40
50
60
0 200 400 600 800 1000
-di
F
/dt [A/µs]
IRM
[A]
T
VJ
= 100ºC
V
R
= 600V
I
F
= 60A, 30A, 15A
Fig. 25. Dynamic Parameters Q
RM
, I
RM
vs. T
VJ
0
0.5
1
1.5
2
20 40 60 80 100 120 140 160
T
VJ
[ºC]
IRM & QRM
[normalized]
I
RM
Q
RM
Fi g . 26. Reco very Time t
rr
vs. -di
F
/dt
120
140
160
180
200
220
0 200 400 600 800 1000
-di
F
/dt [A/µs]
t
rr
[ns]
T
VJ
= 100ºC
V
R
= 600V
I
F
= 60A
30A
15A
Fig. 27. Peak Forward Voltage V
FR
, trr vs -di
F
/dt
0
20
40
60
80
100
120
0 100 200 300 400 500 600 700 800 900 1000
-diF/dt [A/µs]
VFR
[V]
0
0.2
0.4
0.6
0.8
1
1.2
t
rr
[µs]
t
rr
T
VJ
= 100ºC
I
F
= 30A
V
FR
