TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
PRODUCT INFORMATION
1
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION
●Dual Voltage-Programmable Protectors
- Third Generation Design using Vertical
Power Technology
- Wide -5V to -85V Programming Range
- High 150mA min. Holding Current
●Reduced VBAT Supply Current
- Triggering Current is Typically 50x Lower
- Negative Value Power Induction Current
Removes Need for Extra Protection Diode
●Rated for LSSGR & FCC Surges
●Surface Mount and Through-Hole Options
- TISP61060P for Plastic DIP
- TISP61060D for Small-Outline
- TISP61060DR for Taped and Reeled
Small-Outline
●Functional Replacements for
description
The TISP61060 is a dual forward-conducting
buffered p-gate overvoltage protector. It is
designed to protect monolithic SLICs (Subscriber
Line Interface Circuits), against overvoltages on
the telephone line caused by lightning, a.c.
power contact and induction. The TISP61060
limits voltages that exceed the SLIC supply rail
voltage.
STANDARD WAVE SHAPE ITSP
A
LSSGR 10/1000µs 30
FCC Part 68 10/160µs 45
LSSGR 2/10µs 50
PART NUMBERS FUNCTIONAL
REPLACEMENT
TCM1030P, TCM1060P, LB1201AB TISP61060P
TCM1030D, TCM1060D, LB1201AS TISP61060D
TCM1030DR, TCM1060DR TISP61060DR
The SLIC line driver section is typically powered from 0V (ground) and a negative voltage in the region of
-10V to -70V. The protector gate is connected to this negative supply. This references the protection
(clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply
voltage, the overvoltage stress on the SLIC is minimised. (see Applications Information).
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially
clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then
the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding
current of the crowbar prevents d.c. latchup.
device symbol
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the voltage,
VGG, applied to the G terminal.
SD6XAE
A
K1 GK2
MD6XAO
'61060D PACKAGE
(TOP VIEW)
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
2
3
45
6
7
8K1
A
A
K2
G
K1
K2
NC
(Tip)
(Ground)
(Ground)
(Ring)
(VS)
(Tip)
(Ring)
MD6XAP
'61060P PACKAGE
(TOP VIEW)
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
2
3
4 5
6
7
8
K2
G
K1
NC
K1
A
A
K2
(Tip)
(Ground)
(Ground)
(Ring)
(VS)
(Tip)
(Ring)
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
2
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the
loading on the SLIC supply during overvoltages caused by power cross and induction.
NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C≤TJ≤85°C. The surge may be repeated after the device returns to
its initial conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.
absolute maximum ratings
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage, IG=0, -40°C≤TJ≤85°C VDRM -100 V
Repetitive peak gate-cathode voltage, VKA =0, -40°C≤TJ≤85°C VGKRM -85 V
Non-repetitive peak on-state pulse current(see Notes 1 and 2)
ITSP A
10/1000µs30
10/160µs 45
2/10µs 50
Non-repetitive peak on-state current (see Notes 1 and 2)
ITSM Arms 60 Hz sine-wave, 25ms6
60 Hz sine-wave, 2s1
Continuous on-state current (see Note 2) ITM 0.3 A
Continuous forward current (see Note 2) IFM 0.3 A
Operating free-air temperature range TA-40 to +85 °C
Storage temperature range Tstg -40 to +150 °C
Lead temperature 1,6mm (1/16 inch) from case for 10sTL260 °C
recommended operating conditions
MIN TYP MAX UNIT
CGGate decoupling capacitor 100 nF
electrical characteristics, -40°C≤TJ ≤ 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDOff-state current VD=-85V, VGK =0VTJ=25°C 5µA
TJ=85°C 50 µA
V(BO) Breakover voltage dv/dt=-250V/ms, Source Resistance=300Ω, VGG =-50V
dv/dt=-250V/ms, Source Resistance=300Ω, VGG =-65V
IT=12.5A, 10/1000µs, Source Resistance=80Ω, VGG =-50V
-53
-68
-55 V
ISSwitching current dv/dt=-250V/ms, Source Resistance=300Ω, VGG =-50V-100 mA
VTOn-state voltage
IT=1A
IT=10A
IT=16A
IT=30A
3
4
5
7
V
VFForward voltage
IF=1A
IF=10A
IF=16A
IF=30A
2
4
5
5
V
IHHolding current IT=-1A, di/dt = +1A/ms, VGG =-50V-150 mA
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
3
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
IGAS Gate reverse current VGG =-85V, K and A terminals connected TJ=25°C 5µA
TJ=85°C 50 µA
IGT Gate trigger current IT=-1A, tp(g) ≥20µs, VGG =-50V15 mA
dv/dt Critical rate of rise of
off-state voltage VGG =-50V, (see Note 3) -1000 V/µs
COAnode-cathode off-
state capacitance f=1MHz, Vd=0.1V, IG=0, (see Note 4) VD=0V85 pF
VD=-50V10 pF
NOTES: 3. Linear rate of rise, maximum voltage limited to 80% VGG.
4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RθJA Junction to free air thermal resistance Ptot =0.8W,TA=25°C
5cm2, FR4 PCB D Package 170 °C/W
P Package 125
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC
electrical characteristics, -40°C≤TJ ≤ 85°C (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
-v
IS
VS
VGG VD
IH
IT
VT
ITSM
ITSP
V(BO)
I(BO)
ID
Quadrant I
Forward
Conduction
Characteristic
+v
+i
IF
VF
IFSM (= |ITSM|)
IFSP (= |ITSP|)
-i
Quadrant III
Switching
Characteristic PM6XAAA
VGK(BO)
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
4
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
DEVICE PARAMETERS
general
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s.
These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As these
were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics. This
resulted in the invention of new terms based on the application usage and device characteristic. Initially, there
was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and
stabilised.
Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to
specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted
in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and
their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure,
rather than its application usage as a single device may have many applications each using a different
terminology for circuit connection.
alternative symbol cross-reference guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in
some cases the alternative symbols have no substance in international standards and are not fully defined by
the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this
guide.
CROSS-REFERENCE FOR TISP61060 AND TCM1030/60
TISP61060 PARAMETER DATA SHEET
SYMBOL ALTERNATIVE
SYMBOL ALTERNATIVE PARAMETER
RATINGS & CHARACTERISTICS TCM1060, TCM1030
Non-repetitive peak on-state pulse current ITSP -Non-repetitive peak surge current
Non-repetitive peak on-state current ITSM -Non-repetitive peak surge current,10ms
Non-repetitive peak on-state current ITSM -Continuous 60-Hz sinewave, 2s
Forward voltage VFVCF Forward clamping voltage
Forward current IFIFM Peak forward current
On-state voltage VTVCReverse clamping voltage
On-state current ITITM Peak reverse current
Switching current ISItrip Trip current
Breakover voltage V(BO) Vtrip Trip voltage
Gate reverse current (with A and K terminals connected) IGAS IDStand-by current, TIP & RING at GND
Off-state current IDIDStand-by current, TIP & RING at VS
Off-state voltage VDVSSupply voltage
Gate-cathode breakover voltage VGK(BO) VOS Transient overshoot voltage
Gate voltage, (VGG is gate supply voltage referenced
to the A terminal) VGVSSupply voltage
Off-state capacitance COCoff Off-state capacitance
TERMINALS TCM1060, TCM1030
Cathode 1 K1 Tip Tip
Cathode 2 K2 Ring Ring
Anode AGND Ground
Gate GVSSupply voltage
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
5
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
APPLICATIONS INFORMATION
electrical characteristics
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction
temperature, TJ. Hence a characteristic value will depend on the junction temperature at the instant of
measurement. The values given in this data sheet were measured on commercial testers, which generally
minimise the temperature rise caused by testing.
gated protector evolution and characteristics
This section covers three topics. Firstly, it is explained why gated protectors are needed. Second, the
performance of the original IC (integrated circuit) based version is described. Third, the performance
improvements given by the TISP61060 are detailed.
purpose of gated protectors
Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic
SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c.
power contact and induction. As the SLIC was usually powered from a fixed voltage negative supply rail, the
limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example of a fixed
voltage SLIC protector.
SLICs have become more sophisticated. To minimise power consumption, some designs automatically adjust
the supply voltage, VBAT, to a value that is just sufficient to drive the required line current. For short lines the
supply voltage would be set low, but for long lines, a higher supply voltage would be generated to drive
sufficient line current. The optimum protection for this type of SLIC would be given by a protection voltage
which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the
SLIC supply, Figure 2. This gated (programmable) protection arrangement minimises the voltage stress on
the SLIC, no matter what value of supply voltage.
CROSS-REFERENCE FOR TISP61060 AND LB1201AB
TISP61060 PARAMETER DATA SHEET
SYMBOL ALTERNATIVE
SYMBOL ALTERNATIVE PARAMETER
RATINGS & CHARACTERISTICS LB1201AB
Non-repetitive peak on-state pulse current ITSP IPPulse current
Non-repetitive peak on-state current ITSM IPRMS pulse current, 60 Hz
On-state voltage VTVON On-state voltage
Switching current ISItTrip current
Breakover voltage V(BO) VTTrip voltage
Maximum continuous on-state current ITM ICOn-state current
Maximum continuous forward current IFM ICOn-state current
Gate voltage, (VGG is gate supply voltage referenced
to the A terminal) VGVSSupply voltage
Off-state capacitance COCOFF Off-state capacitance
TERMINALS LB1201AB
Cathode 1 K1 Tip Tip
Cathode 2 K2 Ring Ring
Anode AGND Ground
Gate GVSSupply voltage
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
6
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
ic based protectors
In 1986, an IC based gated protector was proposed (A 90V Switching Regulator and Lightning Protection
Chip Set, Robert K. Chen, Thomas H. Lerch, Johnathan S. Radovsky, D. Alan Spires, IEEE Solid-State
Circuits Conference, February 20, 1986, pp 178/9 and pp 340/1). Commercially, this resulted in the AT&T
Microelectronics LB1201AB device and the higher current Texas Instruments Inc. TCM1060 device
This implementation consisted of four diodes and two high holding current thyristors. Positive overvoltages on
the line wires are clipped to ground by forward conduction of the wire to ground diodes. Negative overvoltages
are initially clipped close to the SLIC negative supply rail, VBAT, by conduction of the thyristor cathode-gate
and gate series diode. This means that the protection voltage level for slow wave forms will be about 1.5V
lower than the SLIC supply voltage. If sufficient current is available from the overvoltage, then the thyristor will
switch into a low voltage on-state condition. When the thyristor crowbars, the two series gate diodes prevent
the SLIC supply from being shorted to ground via the thyristor gate. As the overvoltage subsides the high
holding current of the crowbar prevents d.c. latchup (see Figure 1).
impulse protection performance
The impulse protection voltage will be the sum of the gate supply (VBAT) and the impulse peak gate-cathode
voltage (VGK(BO)). Capacitor C1 provides the pulse of gate current that occurs during fast rising impulses. The
protection voltage will be increased if there is a long connection between the gate decoupling capacitor, C1,
and the gate terminal. During the initial rise of a fast impulse (e.g. 2/10), the gate current (IG) is the same as
the cathode current (IK). Rates of 70A/µs can cause inductive voltages of 0.7V in 2.5cm of printed wiring
track. To minimise this inductive voltage increase of protection voltage, the length of the capacitor to gate
terminal tracking should be minimised. Inductive voltages in the protector cathode wiring can increase the
protection voltage. These voltages can be minimised by routing the SLIC connection through the protector as
shown in Figure 2.
a.c. protection performance
Figure 2 shows a typical a.c. power cross test circuit. A variable voltage a.c. source is applied to the line card
via 600Ω series resistors. On the line card there are further series resistors R1 and R2. These resistors
provide over-current protection by fusing or going high resistance under high current a.c. conditions.
Figure 3 shows the gate and cathode a.c. power line cross voltage and current wave forms of the IC based
protector. Positive voltages are clipped at about +1V by diode conduction. Negative voltages are clipped to
about -52V as the SLIC supply voltage was -50V. Sufficient current (200mA) was available to cause the
Figure 2. SIMPLIFIED IC BASED SLIC PROTECTOR CIRCUIT
R1
50 ΩΩ
RING
WIRE
TIP
WIRE
Th4
Th5
SLIC
IC BASED
SLIC
PROTECTOR
VBAT
C1
100 nF
AI6XAD
600 ΩΩ
600 ΩΩ
A.C.
GENERATOR
0 - 600 Vrms
SWITCHING MODE
POWER SUPPLY
GENERATOR
SOURCE
RESISTANCE
IBAT
IGISLIC
C2
D1
D2
Tx
R2
50 ΩΩ
R1
50 ΩΩ
RING
WIRE
TIP
WIRE
Th4
Th5
SLIC
IC BASED
SLIC
PROTECTOR
VBAT
C1
100 nF
AI6XAD
600 ΩΩ
600 ΩΩ
A.C.
GENERATOR
0 - 600 Vrms
SWITCHING MODE
POWER SUPPLY
GENERATOR
SOURCE
RESISTANCE
IBAT
IGISLIC
C2
D1
D2
Tx
R2
50 ΩΩ
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
7
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
thyristor to switch into the low-voltage on-state condition. At the end of the negative half cycle, the thyristor
switches off when the current falls below the holding current value (300mA). Switch-off and re-clipping at
-52V causes a second pulse of gate current. The wire current drawn by the protector is quasi-sinusoidal
During the positive a.c. voltage period (diode clipping) there is no gate current. During the negative a.c.
voltage period there are two triangular pulses of gate current, which peak at about 80mA. This is current
which flows into the gate terminal as indicated by the IG current arrow in Figure 2. This direction of current
charges the VBAT supply. This would not be a problem if the VBAT supply was a rechargeable battery.
However, often the supply is generated from a switching mode power supply or the SLIC supply feed has a
series diode which blocks reverse (charging) current flow to the battery. In these cases the supply can only
sink current in the direction shown by the IBAT arrow in Figure 2. Unless the SLIC current, ISLIC, is equal or
greater than IG the value of VBAT will increase, possibly to a level which causes destruction of the SLIC.
The maximum average value of IG occurs when the thyristor only clips the voltage and the peak cathode
current is just beginning to approach the switching (IS) value, see Figure 4. The average current is maximised
under high source impedance conditions (e.g. 600Ω). In the case of the LB1201AB, it is recommended that
the supply should be able to absorb 700mA of “wrong way” current. If the supply cannot absorb the current
then a shunt breakdown diode is recommended to provided a path for the gate current to ground (D2 in
Figure 2). High power diodes are expensive, so diode D2 is usually low power, purposely selected to fail
under this a.c. condition and protect the SLIC.
Figure 3. IC PROTECTOR POWER CROSS WAVE FORMS
Time - ms
0 5 10 15 20
IK - Cathode Current - mA
-750
-500
-250
0
250
500
750
IG - Gate Current - mA
-100
-75
-50
-25
0
25
50
75
100
Time - ms
0 5 10 15 20
Voltage - V
-60
-50
-40
-30
-20
-10
0
10
VG
VK
IK
IG
AI6XAG
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
8
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
TISP61060 buffered gate protector
The TISP61060 improves on the original IC based design in three ways, Figure 5. Firstly, the thin lateral IC
structure has been changed to a vertical power device structure for increased area efficiency and greater
Figure 4. IC PROTECTOR HIGH IMPEDANCE POWER CROSS CLIPPING WAVE FORMS
Figure 5. TISP61060 BUFFERED GATE PROTECTOR
Time - ms
0 5 10 15 20
IK - Cathode Current - mA
-300
-200
-100
0
100
200
300
IG - Gate Current - mA
-100
-80
-60
-40
-20
0
20
40
60
80
100
Time - ms
0 5 10 15 20
Voltage - V
-60
-50
-40
-30
-20
-10
0
10
VG
VK
IK
IG
AI6XAH
R1
50 ΩΩ
RING
WIRE
TIP
WIRE
SLIC
TISP61060
VBAT
C1
100 nF
AI6XAE
600 ΩΩ
600 ΩΩ
A.C.
GENERATOR
0 - 600 Vrms
SWITCHING MODE
POWER SUPPLY
GENERATOR
SOURCE
RESISTANCE
IBAT
IGISLIC
C2
D1
Tx
R2
50 ΩΩ
Th4
Th5
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
9
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
energy capability. Second, the series gate diodes have been changed to transistor buffers. The maximum
current injected into the gate supply is then reduced by the transistors gain factor (HFE). Third, some current
from the positive voltage diode conduction has been diverted to the gate terminal which subtracts from the
normal gate current. In most cases, this allows any previously used SLIC supply rail shunt protection diode to
be removed. Although the SLIC supply is taken to a terminal that is internally connected to transistor bases,
the terminal is still designated as the gate terminal, G.
Figure 6 shows the high impedance a.c. waveforms for the TISP61060. As the TISP61060 replaces the IC
based protector’s gate diode with a transistor, the peak gate current is reduced by over 50 times. In addition
there is a compensating negative gate current flow during diode conduction. The TISP61060 has the
maximum value of peak gate current specified and so allows for designer to design for limit conditions. Most
IC protectors do not specify this parameter. Figure 7 shows the improvement due to the TISP61060. These
plots show the full cycle average gate current against rms a.c. voltage. The IC based protector has a
substantial positive gate current which will always charge the SLIC supply, possibly causing an overvoltage.
The TISP61060 has a negative gate current and so cannot overvoltage the SLIC.
Figure 6. TISP61060 HIGH IMPEDANCE POWER CROSS CLIPPING WAVE FORMS
Time - ms
0 5 10 15 20
IK - Cathode Current - mA
-300
-200
-100
0
100
200
300
IG - Gate Current - mA
-10
-8
-6
-4
-2
0
2
4
6
8
10
Time - ms
0 5 10 15 20
Voltage - V
-60
-50
-40
-30
-20
-10
0
10
VG
VK
IK
IG
IG
IK
AI6XAI
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
10
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
circuit component values
The TISP61060 is a functional replacement for three devices, the LB1201, TCM1030 and TCM1060. These
devices have a minimum value of series limiting resistor (R1 and R2 in Figure 2) which will ensure that the
impulse surge current will not exceed the device rated value. This is summarised in the table below.
This table shows that the TISP61060 has impulse ratings which are higher or equal to those of the other three
devices. Similarly, the TISP61060 has a.c. ratings which are higher or equal to those of the other three
devices. A series over-current protector should be included in the wire feed to prevent exceeding the
Figure 7. AVERAGE GATE CURRENT VS A.C. SUPPLY VOLTAGE IN FIGURES 2 AND 5
DEVICE 10/1000
1kV, 10 Ω10/160
1.5kV, 7.5Ω2/10
2.5kV, 5 ΩRECCOMMENDED
MIN. SERIES
RESISTANCE Ω
LB1201
ITSP A 12.5 18.5 23
100
MIN. SERIES
RESISTANCE Ω70 73.6 104
TCM1030
ITSP A 16 25 35
100
MIN. SERIES
RESISTANCE Ω52.5 52.5 66.4
TCM1060
ITSP A 30 45 50
50
MIN. SERIES
RESISTANCE Ω23.3 25.8 45
TISP61060
ITSP A 30 45 50
50
MIN. SERIES
RESISTANCE Ω23.3 25.8 45
VAC
- RMS Supply Voltage - V
0 100 200 300 400 500
IG(AV) - Average Gate Current - mA
-10
-5
0
5
10
15
20
25
Figure 3. Condition
Figure 6. Condition TISP61060
IC Based Protector
Protector Starting to Crowbar
Figure 4. Condition
AI6XAJ
Figure 2. and Figure 5.
Test Circuits
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
11
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
TISP61060 a.c. ratings. As covered earlier, the gate decoupling capacitor should be 100nF and should be
mounted as close to the protector as possible.
application circuit
Figure 8 shows a typical TISP61060 SLIC card protection circuit. The incoming line wires, R and T, connect to
the relay matrix via the series over-current protection. Fusible resistors, fuses and positive temperature
coefficient (PTC) resistors can be used for over-current protection. Resistors will reduce the prospective
current from the surge generator for both the TISP61060 and the ring/test protector. The TISP7xxxF3
protector has the same protection voltage for any terminal pair. This protector is used when the ring generator
configuration maybe ground or battery-backed. For dedicated ground-backed ringing generators, the
TISP3xxxF3 gives better protection as its inter-wire protection voltage is twice the wire to ground value.
Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP61060 protector. The protector gate
reference voltage comes from the SLIC negative supply (VBAT). A 100nF gate capacitor sources the high
gate current pulses caused by fast rising impulses.
Figure 8. TYPICAL APPLICATION CIRCUIT
TEST
RELAY
RING
RELAY
SLIC
RELAY
TEST
EQUIP-
MENT RING
GENERATOR
S1a
S1b
R1
R2
RING
WIRE
TIP
WIRE Th1
Th2
Th3
Th4
Th5
SLIC
SLIC
PROTECTOR
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
TISP
61060
TISP
3xxxF3
OR
7xxxF3
S3a
S3b
VBAT
100 nF
AI6XAF
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
12
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
D008
plastic small-outline package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
5,21 (0.205)
4,60 (0.181)
NOTES: A. Leads are within 0,25 (0.010) radius of true position at maximum material condition.
B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0,15 (0.006).
D. Lead tips to be planar within ±0,051 (0.002).
1,75 (0.069)
1,35 (0.053)
6,20 (0.244)
5,80 (0.228)
5,00 (0.197)
4,80 (0.189)
D008
8765
4
3
2
1
4,00 (0.157)
3,81 (0.150)
7° NOM
3 Places
7° NOM
4 Places
0,51 (0.020)
0,36 (0.014)
8 Places
Pin Spacing
1,27 (0.050)
(see Note A)
6 Places
1,12 (0.044)
0,51 (0.020)
4° ± 4°
0,79 (0.031)
0,28 (0.011)
0,203 (0.008)
0,102 (0.004)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
0,50 (0.020)
0,25 (0.010) x 45°NOM
0,229 (0.0090)
0,190 (0.0075)
MDXXAAC
INDEX
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
13
PRODUCT INFORMATION
SEPTEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
P008
plastic dual-in-line package
This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions The package is intended for
insertion in mounting-hole rows on 7,62 (0.300) centers. Once the leads are compressed and inserted,
sufficient tension is provided to secure the package in the board during soldering. Leads require no
additional cleaning or processing when used in soldered assembly.
MECHANICAL DATA
ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARANTHETICALLY IN INCHES
0,53 (0.021)
0,38 (0.015)
8 Places
1,78 (0.070) MAX
4 Places
6,60 (0.260)
6,10 (0.240)
P008
8,23 (0.324)
7,62 (0.300)
9,75 (0.384)
9,25 (0.364)
2,54 (0.100) Typical
(see Note A)
6 Places
5,08 (0.200)
MAX
3,17 (0.125)
MIN
0,51 (0.020)
MIN
31 2 4
8 7 6 5
Seating
Plane
9,40 (0.370)
8,38 (0.330)
0,36 (0.014)
0,20 (0.008)
NOTES: A. Each pin centreline is located within 0,25 (0.010) of its true longitudinal position.
B. Dimensions fall within JEDEC MS001 - R-PDIP-T, 0.300" Dual-In-Line Plastic Family.
C. Details of the previous dot index P008 package style, drawing reference MDXXABA, are given in the earlier publications.
MDXXCF
Index
Notch
