Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 800 V VDGR TJ = 25C to 150C, RGS = 1M 800 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 1 2 A A IA EAS TC = 25C TC = 25C 1 75 A mJ dV/dt IS IDM, VDD VDSS, TJ 150C 5 V/ns PD TC = 25C 42 W TJ TJM Tstg -55 ... +150 150 -55 ... +150 C C C TL 1.6mm (0.062) from Case for 10s 300 C TSOLD Plastic Body for 10s 260 C Md Mounting Torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 TO-252 TO-251 2.50 3.00 0.35 0.40 g g g g (TO-220) = 800V = 1A 14 Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 800 VGS(th) VDS = VGS, ID = 50A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 V 4.0 V (TAB) S TO-252 (IXTY) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages z z z Easy to Mount Space Savings High Power Density Applications z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D z z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 100 nA 3 A 30 A TJ = 125C (c) 2009 IXYS CORPORATION, All Rights Reserved 10 14 DS100112(02/09) IXTA1N80P IXTU1N80P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 * ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Characteristic Values Min. Typ. Max. 0.55 S 250 22 5.3 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 50 (External) 20 18 58 42 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 9.0 1.4 5.5 nC nC nC RthJC RthCS (TO-220) 0.50 3.0 C/W C/W Source-Drain Diode IXTP1N80P IXTY1N80P 0.30 Characteristic Values (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 1 A ISM Repetitive, Pulse Width Limited by TJM 4 A VSD IF = IS, VGS = 0V, Note 1 trr IF = 1A, -di/dt = 100A/s VR = 100V, VGS = 0V 1.3 V 700 ns Note 1: Pulse Test, t 300s; Duty Cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA1N80P IXTU1N80P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 1.0 1.8 VGS = 10V 8V 7V 0.9 0.8 1.4 7V 0.6 ID - Amperes ID - Amperes VGS = 10V 8V 1.6 0.7 6V 0.5 0.4 1.2 1.0 6V 0.8 0.6 5V 0.3 0.2 0.4 0.1 0.2 5V 0.0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 3.0 1.0 VGS = 10V 7V 0.9 2.8 VGS = 10V 2.6 0.8 RDS(on) - Normalized 2.4 0.7 ID - Amperes IXTP1N80P IXTY1N80P 6V 0.6 0.5 5V 0.4 0.3 2.2 I D = 1A 2.0 1.8 I D = 0.5A 1.6 1.4 1.2 1.0 0.2 0.8 0.1 0.6 0.0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 1.1 2.8 2.6 1.0 VGS = 10V TJ = 125C 0.9 2.4 0.8 2.2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 1.4 0.7 0.6 0.5 0.4 0.3 TJ = 25C 1.2 1.0 0.2 0.1 0.8 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 ID - Amperes (c) 2009 IXYS CORPORATION, All Rights Reserved 1.4 1.6 1.8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA1N80P IXTU1N80P Fig. 7. Input Admittance IXTP1N80P IXTY1N80P Fig. 8. Transconductance 1.0 1.3 1.2 TJ = - 40C 0.9 1.1 0.8 1.0 0.8 g f s - Siemens ID - Amperes 25C 0.7 0.9 TJ = 125C 25C - 40C 0.7 0.6 0.5 0.4 125C 0.6 0.5 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 6.5 0.2 0.4 0.6 VGS - Volts 0.8 1.0 1.2 1.4 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 3.0 VDS = 400V 9 I D = 0.5A 2.5 8 I G = 1mA 2.0 VGS - Volts IS - Amperes 7 1.5 1.0 6 5 4 3 TJ = 125C 0.5 2 TJ = 25C 1 0.0 0.40 0 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0 1 2 3 4 5 6 7 8 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1,000 9 10.0 f = 1 MHz 100 Z(th)JC - C / W Capacitance - PicoFarads Ciss Coss 10 1.0 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_1N80P(1A)02-10-09-A IXTA1N80P IXTU1N80P TO-220 (IXTP) Outline Pins: 1 - Gate IXTP1N80P IXTY1N80P TO-251 (IXTU) Outline 1. Gate 3. Source 2 - Drain 2.Drain 4. Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 .086 0.35 .094 .045 b b1 b2 0.64 0.76 5.21 0.89 1.14 5.46 .025 .030 .205 .035 .045 .215 c c1 0.46 0.46 0.58 0.58 .018 .018 .023 .023 D 5.97 6.22 .235 .245 E e e1 6.35 2.28 4.57 6.73 BSC BSC .250 .090 .180 .265 BSC BSC H 17.02 17.78 .670 .700 L L1 L2 8.89 1.91 0.89 9.65 2.28 1.27 .350 .075 .035 .380 .090 .050 TO-252 (IXTY) Outline TO-263 (IXTA) Outline (c) 2009 IXYS CORPORATION, All Rights Reserved Pins: 1 - Gate 3 - Source 2,4 - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC