Reverse Voltage: 50 to 600 Volts
Forward Current: 3 Amp
RoHS Device
Halogen Free
Features
- Low profile package.
- For surface mounted applications.
- Glass passivated chip junction.
- Super fast reverse recovery time.
SMD Super Fast Recovery Rectifiers
Page 1
REV:A
ES3AB-HF Thru. ES3JB-HF
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JS017
Mechanical data
- Case: SMB
- Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
Cathode Anode
SMB/DO-214AA
Dimensions in inches and (millimeter)
0.185(4.70)
0.160(4.06)
0.075(1.90)
0.087(2.20)
0.130(3.30)
0.146(3.70)
0.213(5.40)
0.200(5.08)
0.096(2.44)
0.084(2.13)
0.031(0.80)
0.059(1.50)
0.012(0.305)
0.006(0.152)
0.008(0.20)
0.002(0.05)
Maximum Ratings and Electrical Characteristics
Notes: 1. Measured with IF = 0.5A, IR = 1A, Irr = 0.25A.
2. P.C.B. mounted with 2.0" x 2.0" (5 x 5 cm) copper pad areas.
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20%
Maximum DC blocking voltage
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum average forward rectified current
50 V
35 V
V
3A
Units
50
VRRM
VRMS
VDC
IF(AV)
Symbols
100
70
100
400
400
600
420
600
280
Typical junction capacitance 45
A
V
µA
pF
ns
Peak forward surge current, 8.3ms
single half sine-wave superimposed
on rated load
Max. forward voltage at 3A
Maximum DC reverse current Ta = 25°C
at rated DC blocking voltage Ta =125°C
IFSM
VF
Cj
1.0 1.25 1.68
35
90
5
100
IR
50
Typical thermal resistance (Note 2) °C/W
RθJA
Tj, Tstg
Operating and storage temperature range -55 ~ +150 °C
ES3AB
-HF
ES3BB
-HF
ES3CB
-HF
ES3EB
-HF
ES3DB
-HF
ES3GB
-HF
ES3JB
-HF
150
150
105
trr
Maximum reverse recovery time (Note 1)
at Tc =100°C
at VR = 4V, f = 1MHz
200
200
140
300
300
210
RθJC
16