Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
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1. Product profile
1.1 General description
NPN low VCEsat transistor in a plastic SOT457 (SC-74) package.
1.2 Features
SOT457 package
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency, leading to less heat generation
1.3 Applications
Major application segments:
Automotive 42 V power
Telecom infrastructure
Industrial
DC-to-DC converter
Peripheral driver
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load drivers (e.g. relays, buzzers and motor s)
1.4 Quick reference data
PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 11 December 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage - - 100 V
ICcollector current (DC) - - 1 A
ICM peak collector current - - 3 A
RCEsat equivalent on-resistance - - 200 mΩ
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 2 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] Made in Malaysia
Table 2. Discrete pinning
Pin Description Simplified outline Symbol
1, 2, 5, 6 collector
3base
4emitter
132
4
56
sym01
4
1, 2, 5, 6
4
3
Table 3. Ordering i nformation
Type number Package
Name Description Version
PBSS8110D - plastic surface mounted package; 6 leads SOT457
Table 4. Marking
Type number Marking code[1]
PBSS8110D A8
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 3 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting
pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting
pad.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base vo ltage open emitter - 120 V
VCEO collector-emitter voltage open base - 100 V
VEBO emitter-base voltage open collector - 5 V
ICM peak collector current Tj(max) -3A
ICcontinuous collector current - 1 A
IBcontinuous base current - 0.3 A
Ptot total power dissipation Tamb ≤25 °C [1] -300mW
[2] -550mW
[3] -700mW
Tjjunction temperature - 150 °C
Tamb operating ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
(1) FR4 PCB; 6cm2 collector mounting pad
(2) FR4 PCB; 1cm2 collector mounting pad
(3) FR4 PCB; standard footprint
Fig 1. Power derating curves
Tamb (°C)
0 16012040 80
001aaa493
400
200
600
800
Ptot
(mW)
0
(3)
(2)
(1)
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 4 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting pad.
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to ambient in free air [1] 416 K/W
[2] 227 K/W
[3] 178 K/W
Rth(j-s) thermal re sistance from ju nction to
soldering point in free air [1] 83 K/W
Mounted on FR4 PCB; standard footprint
(1) δ=1
(2) δ=0.75
(3) δ=0.5
(4) δ=0.33
(5) δ=0.2
(6) δ=0.1
(7) δ=0.05
(8) δ=0.02
(9) δ=0.01
(10) δ=0
Fig 2. Transient thermal impedance as a function of pulse time; typical va lues
001aaa494
10
1
102
103
Zth
(K/W)
10−1
10−51010−2
10−4102
10−1
tp (s)
10−3103
1
(5)
(6)
(7)
(8)
(10)
(9)
(1)
(2)
(3)
(4)
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 5 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
[1] Pulse test tp ≤300 μs; δ ≤ 0.02.
Table 7. Characteristics
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =80V; I
E= 0 A - - 100 nA
VCB =80V; I
E=0A;
Tj= 150 °C--50μA
ICES collector-emitter
cut-off current VCE =80V; V
BE = 0 V - - 100 nA
IEBO emitter-base cut-off
current VEB =4V; I
C= 0 A - - 100 nA
hFE DC current gain VCE =10V; I
C= 1 mA 150 - -
VCE =10V; I
C= 250 mA 150 - 500
VCE =10V; I
C=0.5A [1] 100 - -
VCE =10V; I
C=1A [1] 80 - -
VCEsat collector-emitter
saturation voltage IC=100mA; I
B=10mA - - 40 mV
IC=500mA; I
B=50mA - - 120 mV
IC=1A; I
B= 100 mA - - 200 mV
RCEsat equivalent
on-resistance IC=1 A; I
B= 100 mA [1] - 160 200 mΩ
VBEsat base-emitter
saturation voltage IC=1 A; I
B= 100 mA - - 1.05 V
VBEon base-emitter turn-on
voltage VCE =10V; I
C=1A - - 0.9 V
fTtransition frequency VCE =10V; I
C=50mA;
f=100MHz 100 - - MHz
Cccollector capacitance VCB =10V; I
E=I
e=0A;
f=1MHz --7.5pF
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 6 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
VCE =10V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
VCE =10V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 3. DC current gain as a function of collector
current; typical values Fig 4. Base-emitter volt age as a function of collector
current; typical values
IC/IB=10
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
IC/IB= 20; Tamb =25°C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values Fig 6. Collector-emit ter sa turation voltage as a
function of collector current; typical values
001aaa497
200
400
600
hFE
0
IC (mA)
10−1104
103
110
2
10
(1)
(2)
(3)
001aaa495
VBE
(mV)
IC (mA)
10−1104
103
110
2
10
(1)
(2)
(3)
600
400
800
1000
200
(1)
(2)
(3)
001aaa504
IC (mA)
10−1104
103
110
2
10
10−1
1
VCEsat
(V)
10−2
001aaa505
IC (mA)
10−1104
103
110
2
10
102
103
VCEsat
(mV)
10
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 7 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
IC/IB= 50; Tamb =25°CI
C/IB=10
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function
of collector current; typica l values
IC/IB= 20; Tamb =25°CI
C/IB= 50; Tamb =25°C
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values Fig 10. Base-emitter saturatio n vo ltage as a function
of collector current; typica l values
001aaa506
103
102
104
VCEsat
(mV)
10
IC (mA)
10−1104
103
110
2
10
001aaa498
1200
800
1000
400
600
VBEsat
(mV)
200
IC (mA)
10−1104
103
110
2
10
(1)
(2)
(3)
001aaa499
1200
1000
800
600
VBEsat
(mV)
400
IC (mA)
10−1104
103
110
2
10
001aaa500
800
600
1000
VBEsat
(mV)
400
IC (mA)
10−1104
103
110
2
10
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 8 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
Tamb =25°CI
C/IB=10
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 11. Collector current as a function of
collector -em itter voltage; typic a l va lu e s Fig 12. Equivalent on-resistance as a function of
collector current; typical values
IC/IB= 20; Tamb =25°CI
C/IB= 50; Tamb =25°C
Fig 13. Equivalent on-resistance as a function of
collector current; typical values Fig 14. Equivalent on-resistance as a function of
collector current; typical values
VCE (V)
054231
001aaa496
0.8
1.2
0.4
1.6
2
IC
(A)
0
31.5
24.5
17.5
10.5
28
21
14
7
3.5
IB (mA) = 35
001aaa501
IC (mA)
10−1104
103
110
2
10
1
10
102
103
RCEsat
(Ω)
10−1
(1)
(2)
(3)
001aaa502
IC (mA)
10−1104
103
110
2
10
1
10
102
103
RCEsat
(Ω)
10−1
001aaa503
IC (mA)
10−1104
103
110
2
10
1
10
102
103
RCEsat
(Ω)
10−1
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 9 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
8. Package outline
Fig 15. Package outline
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT457 SC-74
wBM
bp
D
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
scale
c
X
132
4
56
0 1 2 mm
Plastic surface-mounted package (TSOP6); 6 leads SOT45
7
UNIT A1bpcDEHELpQywv
mm 0.1
0.013
0.40
0.25
3.1
2.7
0.26
0.10
1.7
1.3
e
0.95 3.0
2.5 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
0.33
0.23
A
1.1
0.9
05-11-07
06-03-16
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 10 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
9. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS8110D_2 20091211 Product data - PBSS8110D_1
Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•Table 2 “Discrete pinning”: am ended
•Figure 3 “DC current gain as a function of collector current; typical values”: updated
•Figure 11: updated
•Figure 15 “Package outline”: updated
PBSS8110D_1 20040423 Product data - -
PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 11 of 12
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
10. Legal information
10.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sh eet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict wit h the short data sheet, th e
full data sheet shall pre va il.
10.3 Disclaimers
General — In formation in this document is beli eved to be accurate and
reliable. However, NXP Semiconductors d oes not give any represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applicat ions where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to war ranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
10.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to : salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 December 2009
Document identifier: PBSS8110D_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
12. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Contact information. . . . . . . . . . . . . . . . . . . . . 11
12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
