Silicon Carbide
MOSFET Module
100 Amperes/1200 Volts
QJD1210006 Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
104/10 Rev. 5
Description:
Powerex Silicon Carbide MOSFET
Modules are designed for use in
high frequency application. Each
module consists of two MOSFET
Silicon Carbide Transistors in
half-bridge configuration with
each transistor having a reverse
connected fast recovery free-wheel
silicon carbide Schottky diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Junction Temperature - 200°C
£ Silicon Carbide Chips
£ Industry Leading RDS(on)
£ High Speed Switching
£ Low Switching Losses
£ Low Capacitance
£ Low Drive Requirement
£ Fast 50A Free Wheeling
Schottky Diode
£ High Power Density
£ Isolated Baseplate
£ Aluminum Nitride Ceramic
Applications:
£ High Frequency Power Supply
£ High Efficiency Inverter
£ High Temperature Environment
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14+0.04/-0.01 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Dimensions Inches Millimeters
Q 0.98 25.0
R 0.11 2.8
S M6 Metric M6
T 0.26 Dia. Dia. 6.5
U 0.02 0.5
V 0.71 18.0
W 0.28 7.0
X 0.16 4.0
Y 0.3 7.5
Z 0.325 8.25
AA 0.624 15.85
AB 0.709 18.0
AC 0.69 17.5
AD 1.012 25.7
G
H
H
UU
U
U
S1D2
S2 D1
S1
G1
S2
G2
G2S2S1G1
J
AC
E B
A
D
K K K YY
NPQQ
V
W
V V
CL
Y
M
R
X
W
F
S - NUTS (3 TYP)
T - (4 TYP)
Z
AB
AA
LABEL
S1D2 D1S2
Q
AD
QJD1210006
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
2
Preliminary
04/10 Rev. 5
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol QJD1210006 Units
Drain-Source Voltage (G-S Short) VDDS 1200 Volts
Gate-Source Voltage VGSS -5 / +20 Volts
Drain Current (Continuous) at TC = 150°C ID 100 Amperes
Drain Current (Pulsed)* ID(pulse) 250 Amperes
Maximum Power Dissipation (TC = 25°C, Tj < 175°C) PD 880 Watts
Junction Temperature Tj -40 to 200 °C
Storage Temperature Tstg -40 to 150 °C
Mounting Torque, M6 Main Terminal Screws — 40 in-lb
Mounting Torque, M6 Mounting Screws — 40 in-lb
Module Weight (Typical) — 400 Grams
V Isolation Voltage VRMS 3000 Volts
MOSFET Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Drain-Source Breakdown Voltage V(BR)DSS I
D = 50μA, VGS = 0 1200 — — Volts
Zero Gate Voltage Drain Current** IDSS V
GS = 0, VDS = 1200V — 0.5 50 μA
Zero Gate Voltage Drain Current** IDSS V
GS = 0, VDS = 1200V, Tj = 175°C — 50 — μA
Gate Leakage Current IGSS V
DS = 0, VGS = 20V — — 500 nA
Gate Threshold Voltage VGS(th) V
DS = VGS, ID = 5mA 1.5 2.0 2.5 Volts
V
DS = VGS, ID = 5mA, Tj = 175°C — 1.1 — Volts
Drain-Source On Resistance RDS(on) I
D = 100A, VGS = 20V — 15 25 mΩ
I
D = 100A, VGS = 20V, Tj = 175°C — 20 32 mΩ
Gate to Source Charge Qgs V
DD = 800V, ID = 100A — 140 — nC
Gate to Drain Charge Qgd V
DD = 800V, ID = 100A — 220 — nC
Total Gate Charge QG V
CC = 800V, IC = 100A, VGS = -5/20V — 500 — nC
Body Diode Forward Voltage VSD I
F = 100A, VGS = -5V — 4.3 — Volts
Input Capacitance Ciss — 10.2 — nF
Output Capacitance Coss V
GS = 0, VDS = 800V, f = 1MHz — 1.0 — nF
Reverse Transfer Capacitance Crss — 0.1 — nF
Turn-on Delay Time td(on) V
DD = 800V, ID = 100A, — — TBD ns
Rise Time tr V
GS = 0/20V, — — TBD ns
Turn-off Delay Time td(off) R
G = 10Ω, — — TBD µs
Fall Time tf R
L = 856µH — — TBD ns
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage.
QJD1210006
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3
Preliminary
04/10 Rev. 5
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Diode Forward Voltage VFM I
F = 50A, VGS = -5V — 1.6 2.0 Volts
I
F = 50A, VGS = -5V, Tj = 175°C — 2.5 3.2 Volts
Diode Reverse Current IR V
R = 1200V — 160 1000 μA
V
R = 1200, Tj = 150°C — 280 5000 μA
Diode Capacitive Charge QC V
R = 1200V, IF = 50A, di/dt = 2000A/μs — 400 — nC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction-to-Case Rth(j-c) MOSFET Part — 0.17 — °C/W
Thermal Resistance, Junction-to-Case Rth(j-c) Diode Part — 0.28 — °C/W
Contact Thermal Resistance Rth(c-s) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W
GATE SOURCE VOLTAGE, VGS, (VOLTS)
DRAIN CURRENT, ID, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0515 20
Tj = 25°C
Tj = 175°C
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
DRAIN CURRENT, ID, (AMPERES)
TYPICAL OUTPUT CHARACTERISTICS
(Tj = 25ºC)
0 4 8 12 16 20
0
VGE = 20V
VGS = 20V
10
12
16
18
14
Tj = 25°C
600
400
500
200
300
100
0
400
200
300
100
10
JUNCTION TEMPERATURE, Tj, (°C)
NORMALIZED ON-RESISTANCE
NORMALIZED ON-RESISTANCE
VS. TEMPERATURE
2.0
0.8
1.2
0
0.4
1.6
020050 100 150
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
DRAIN CURRENT, ID, (AMPERES)
TYPICAL OUTPUT CHARACTERISTICS
(Tj = 175ºC)
0 4 8 12 16 20
0
10
12
14
500
400
200
300
100
VGE = 20V
18
16
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
200100 400300 500 600
ID = 100A
Ciss
Coss
Crss
VGS = 20V
f = 1MHz
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
TYPICAL CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
0 1000200 400 600 800
CAPACITANCE, Ciss, Coss, Crss
50nF
5nF
500pF
50pF
QJD1210006
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4
Preliminary
04/10 Rev. 5
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MOSFET)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.17°C/W
Zth = Rth • (NORMALIZED VALUE)
10-1
10-2
10-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.28°C/W
Zth = Rth • (NORMALIZED VALUE)
10-1
10-2
10-3
Tj = 75°C
FORWARD VOLTAGE, VF, (VOLTS)
FORWARD CURRENT, IF, (μA)
FREE-WHEEL SCHOTTKY DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
100
0 21 3 4 5
80
60
40
20
0
REVERSE VOLTAGE, VR, (VOLTS)
REVERSE CURRENT, IR, (μA)
FREE-WHEEL SCHOTTKY DIODE
REVERSE CHARACTERISTICS
(TYPICAL)
1000
0 1000500 1500 2000
800
600
400
200
0
Tj = 25°C
Tj = 125°C
Tj = 175°C
Tj = 25°C
Tj = 175°C
Tj = 75°C
Tj = 125°C